Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IRF6648TR1PBF
International Rectifier
IRF6648TR1PBF by International Rectifier is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 260A.
LOW CONDUCTION LOSS
47 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
86 A
.007 ohm
METAL-OXIDE SEMICONDUCTOR
R-XBCC-N3
e1
1
3
ENHANCEMENT MODE
150 Cel
UNSPECIFIED
RECTANGULAR
CHIP CARRIER
260
N-CHANNEL
2.8 W
260 A
Not Qualified
FET General Purpose Power
YES
TIN SILVER COPPER
NO LEAD
BOTTOM
30
SWITCHING
SILICON
IPD50R399CP
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; JESD-30 Code: R-PSSO-G2; Avalanche Energy Rating (EAS): 215 mJ;
215 mJ
500 V
9 A
.399 ohm
TO-252AA
R-PSSO-G2
e3
2
PLASTIC/EPOXY
SMALL OUTLINE
83 W
20 A
TIN
GULL WING
SINGLE
STB36NM60N
STMicroelectronics
STB36NM60N by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 25A max drain current, and 250W power dissipation. Ideal for high-performance power management in compact designs.
345 mJ
600 V
25 A
29 A
.105 ohm
TO-263AB
245
250 W
116 A
Matte Tin (Sn) - annealed
DMN2027LK3-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
20 V
17 A
11.6 A
.021 ohm
8.9 W
46.8 A
MATTE TIN
DMN3020LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Maximum Drain-Source On Resistance: .02 ohm; Qualification: Not Qualified;
30 V
16.7 A
11.3 A
.02 ohm
51 A
FET General Purpose Powers
DMN4009LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.3 W; Transistor Element Material: SILICON; No. of Terminals: 2;
40 V
18 A
.0085 ohm
10.3 W
96.6 A
DMN4015LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.3 W; Case Connection: DRAIN; No. of Elements: 1;
20.8 A
13.5 A
.015 ohm
72.8 A
STD75N3LLH6
STD75N3LLH6 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 75A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 60W. Ideal for high-power switching circuits requiring efficient performance.
75 A
.008 ohm
TO-252
175 Cel
60 W
300 A
STL9N3LLH5
STL9N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
.022 ohm
S-XDSO-N5
5
SQUARE
50 W
36 A
DUAL
NTMS4920NR2G
Onsemi
NTMS4920NR2G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 136A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.0043 ohm Drain-Source Resistance and 41pF Feedback Capacitance.
162 mJ
10.6 A
.0043 ohm
41 pF
R-PDSO-G8
8
-55 Cel
2.12 W
136 A
40
NTB75N03-6G
NTB75N03-6G by Onsemi is a N-channel FET with 30V DS breakdown voltage, 225A IDM, and 0.0065 ohm RDS(on). Ideal for switching applications in enhancement mode, it features a built-in diode and operates in avalanche energy rating of 1500 mJ.
ULTRA LOW RESISTANCE
1500 mJ
.0065 ohm
225 A
NTD24N06-1G
NTD24N06-1G by Onsemi is a single N-channel power FET with 24A max drain current and 62.5W max power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation, such as motor control and power supplies. Operating at up to 175°C, it features metal-oxide semiconductor technology and surface-mount capability for efficient performance.
24 A
62.5 W
IPB120N04S3-02
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 2; Transistor Element Material: SILICON;
1880 mJ
120 A
.0023 ohm
300 W
480 A
IPB70N04S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Drain-Source On Resistance: .0071 ohm; Transistor Element Material: SILICON;
145 mJ
70 A
.0071 ohm
79 W
280 A
IPD70N04S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Feedback Capacitance (Crss): 130 pF; Maximum Pulsed Drain Current (IDM): 280 A;
82 A
.006 ohm
130 pF
AEC-Q101
IPD80N06S3-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
170 mJ
55 V
80 A
.0084 ohm
107 W
320 A
NTLJD4150PTBG
NTLJD4150PTBG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features a max IDM of 14A and ID of 3.4A, with an RDS(on) of 0.135 ohm. This MOSFET operates in ENHANCEMENT MODE, has a max power dissipation of 2.3W, and can withstand temperatures from -55 to 150 °C.
3.4 A
2.7 A
.135 ohm
S-PDSO-N6
6
P-CHANNEL
2.3 W
14 A
Other Transistors
STL80N4LLF3
STL80N4LLF3 by STMicroelectronics is an N-channel FET designed for high-efficiency applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
R-PDSO-N8
80 W
STS15N4LLF3
STS15N4LLF3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE up to 150°C.
2000 mJ
15 A
e4
2.7 W
60 A
NICKEL PALLADIUM GOLD
STB20NM60D
STB20NM60D by STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. Ideal for power management in various electronic devices.
700 mJ
.29 ohm
192 W
STD50N03L
STD50N03L by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 40 A and a breakdown voltage of 30 V. It offers low on-resistance at 0.019 Ω and operates up to 175 °C. This compact FET is suitable for high-efficiency power management.
230 mJ
40 A
.019 ohm
160 A
SUM52N20-39P-E3
Vishay Intertechnology
Vishay Intertechnology's SUM52N20-39P-E3 is a N-channel FET with 200V DS breakdown voltage, 100A pulsed drain current, and 0.094 ohm max on-resistance. Ideal for power applications requiring high current handling and low on-resistance in a compact small outline package.
31 mJ
200 V
52 A
.094 ohm
100 A
MATTE TIN OVER NICKEL
SPB80N10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Peak Reflow Temperature (C): 245; Avalanche Energy Rating (EAS): 700 mJ;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
100 V
.024 ohm
NTLJD3119CTAG
NTLJD3119CTAG by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It features 20V DS Breakdown Voltage, 18A Max IDM, and 0.065 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
3.8 A
2.6 A
.065 ohm
N-CHANNEL AND P-CHANNEL
STC5DNF30V
STC5DNF30V by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.5 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.
4.5 A
.04 ohm
1.3 W
STD90N03L
STD90N03L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOW THRESHOLD
350 mJ
.0057 ohm
NOT SPECIFIED
95 W
STN5PF02V
STN5PF02V by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 4.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact SO package ensures easy surface mounting in various electronic devices.
4.2 A
.1 ohm
R-PDSO-G4
4
2.5 W
STSJ100NHS3LL
STSJ100NHS3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
1800 mJ
70 W
FDD8444L
Fairchild Semiconductor
FDD8444L by Fairchild Semiconductor is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features an EAS of 295mJ, 0.0107 ohm RDS(on), and operates in ENHANCEMENT MODE.
295 mJ
50 A
16 A
.0107 ohm
153 W
IRF6645TR1PBF
IRF6645TR1PBF by International Rectifier is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 45A IDM, and 0.035 ohm RDS(on). With a max power dissipation of 42W and operating temperature up to 150°C, it's ideal for high-power switching circuits.
29 mJ
5.7 A
.035 ohm
42 W
45 A
NTMFS4837NHT3G
NTMFS4837NHT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include BUILT-IN DIODE, METAL-OXIDE SEMICONDUCTOR tech, and 144mJ EAS rating.
144 mJ
10.2 A
R-PDSO-F6
FLAT
NTMFS4841NHT1G
NTMFS4841NHT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 177A IDM, and 0.0116 ohm RDS(on). Ideal for SWITCHING applications due to its 41.7W Power Dissipation, METAL-OXIDE SEMICONDUCTOR technology, and ENHANCEMENT MODE operation.
98 mJ
59 A
.0116 ohm
41.7 W
177 A
NTMFS4841NHT3G
NTMFS4841NHT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 177A, EAS of 98mJ, and ID of 59A. With 0.0116 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 150 °C.
STB60N55F3
STB60N55F3 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance with low on-resistance.
390 mJ
110 W
STD60N55F3
STD60N55F3 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
STD7NM50N
STD7NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 20A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
100 mJ
5 A
.78 ohm
45 W
STS9D8NH3LL
STS9D8NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9A, a breakdown voltage of 30V, and operates at up to 150 °C. Ideal for compact power management in electronics.
150 mJ
8 A
.025 ohm
2 W
32 A
NTMKE4892NT1G
NTMKE4892NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 210A IDM, and 0.0026 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, this chip carrier package features a built-in diode and operates in BOTTOM terminal position.
290 mJ
26 A
.0026 ohm
210 A
STB13NM50N
STB13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 12A max drain current, and operates at up to 150 °C. This compact FET ensures efficient power management in various electronic devices.
200 mJ
12 A
.32 ohm
100 W
48 A
STK822
STK822 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 152 A, a breakdown voltage of 25 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
ULTRA-LOW RESISTANCE
500 mJ
SOURCE
25 V
38 A
.003 ohm
R-XDSO-N4
5.2 W
152 A
STL6NM60N
STL6NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 23A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
65 mJ
1 A
.92 ohm
S-XQCC-N12
12
23 A
QUAD
STS4DNF60
STS4DNF60 by STMicroelectronics is an N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a PLASTIC/EPOXY package, capable of handling 16A Pulsed Drain Current and 4A Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W at 150°C.
4 A
.09 ohm
FQB34N20TM_AM002
Fairchild Semiconductor's FQB34N20TM_AM002 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 124A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.075 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE.
640 mJ
31 A
.075 ohm
180 W
124 A
FQD5N60CTF
FQD5N60CTF by Fairchild Semiconductor is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 11.2A IDM, 210mJ EAS, and 49W Max Power Dissipation. Its PLASTIC/EPOXY package with GULL WING terminals makes it suitable for surface mount installations.
210 mJ
2.8 A
2.5 ohm
49 W
11.2 A
Matte Tin (Sn)
FQD6N50CTF
FQD6N50CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 300mJ EAS, and 1.2ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 61W at 150°C.
300 mJ
1.2 ohm
61 W
STD6NM60N
STD6NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
4.6 A
18.4 A
FQD6N40CTF
FQD6N40CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 18A and Avalanche Energy Rating of 270mJ. With a max power dissipation of 48W and operating temperature up to 150°C, it offers reliable performance in various electronic systems.
FAST SWITCHING
270 mJ
400 V
1 ohm
48 W
VNV35N0713TR
VNV35N0713TR by STMicroelectronics is an N-channel MOSFET designed for efficient power management. It features a max DS breakdown voltage of 60V, power dissipation of 125W, and low on-resistance of 0.035Ω, making it ideal for high-performance applications. Its compact SO package ensures easy surface mounting in various electronic devices.
COMPLEX
R-PDSO-G10
10
250
125 W
1350 ns
800 ns
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