Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IRF7769L2TR1PBF
International Rectifier
IRF7769L2TR1PBF by International Rectifier is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 500A IDM, 260mJ EAS, and 0.0035 ohm RDS(on). Operates in ENHANCEMENT MODE with max temp of 175°C.
260 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
395 A
20 A
.0035 ohm
METAL-OXIDE SEMICONDUCTOR
R-XBCC-N9
e1
1
9
ENHANCEMENT MODE
175 Cel
UNSPECIFIED
RECTANGULAR
CHIP CARRIER
N-CHANNEL
125 W
500 A
Not Qualified
FET General Purpose Power
YES
TIN SILVER COPPER
NO LEAD
BOTTOM
SWITCHING
SILICON
NTD3813N-1G
Onsemi
NTD3813N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 16V DS Breakdown Voltage, 114A Pulsed Drain Current, and 0.0145 ohm Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR device operates in ENHANCEMENT MODE and has a max power dissipation of 34.9W at 175 °C.
15 mJ
16 V
51 A
9.6 A
.0145 ohm
R-PSSO-F3
e3
3
PLASTIC/EPOXY
SMALL OUTLINE
260
34.9 W
114 A
TIN
FLAT
SINGLE
NTD3813NT4G
NTD3813NT4G by Onsemi is an N-CHANNEL FET with 16V DS Breakdown Voltage and 114A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0145 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE up to 175 °C.
R-PSSO-G2
2
GULL WING
NTD3817NT4G
NTD3817NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 16V DS Breakdown Voltage, 78A Pulsed Drain Current, and 0.029 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE with a max temperature of 175 °C, making it ideal for high-power switching circuits.
34.5 A
7.6 A
.029 ohm
25.9 W
78 A
SN7002NE6433
Infineon Technologies
Infineon's SN7002NE6433 is a N-CHANNEL FET with 0.2A max drain current and 0.36W power dissipation in single configuration. Ideal for applications requiring enhancement mode operation, such as power management systems or battery protection circuits.
.2 A
150 Cel
.36 W
SN7002WE6433
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .23 A;
.23 A
.5 W
SN7002WE6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): .23 A;
BSS169E6906
BSS169E6906 by Infineon is a N-CHANNEL FET with 0.17A max drain current and 0.36W power dissipation in depletion mode. Ideal for applications requiring high temperature resistance up to 150°C, such as power management systems and battery protection circuits.
.17 A
DEPLETION MODE
NTD4855NT4G
NTD4855NT4G by Onsemi is an N-CHANNEL FET with a 25V DS Breakdown Voltage and 197A Pulsed Drain Current, ideal for SWITCHING applications. It features a 0.006 ohm Drain-Source On Resistance, 66.7W Power Dissipation, and operates in ENHANCEMENT MODE at up to 175 °C.
220 mJ
25 V
98 A
14 A
.006 ohm
66.7 W
197 A
NTD4860NT4G
NTD4860NT4G by Onsemi is an N-CHANNEL Power FET with a 25V DS Breakdown Voltage and 130A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0111 ohm RDS(on), and operates in ENHANCEMENT MODE.
84.5 mJ
65 A
10.4 A
.0111 ohm
50 W
130 A
MATTE TIN
30
NTD4863NT4G
NTD4863NT4G by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 98A, avalanche energy rating of 60.5mJ, and max operating temperature of 175 °C. Ideal for high-power circuit designs requiring efficient switching capabilities in compact spaces.
60.5 mJ
49 A
9.2 A
.014 ohm
36.6 W
STB16NM50N
STMicroelectronics
STB16NM50N from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
470 mJ
500 V
15 A
.26 ohm
TO-263AB
60 A
NTB5605T4G
NTB5605T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 55A.
338 mJ
60 V
18.5 A
.14 ohm
P-CHANNEL
88 W
55 A
Other Transistors
STB23NM60N
STB23NM60N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 19A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
700 mJ
600 V
19 A
.18 ohm
150 W
76 A
STD60N3LH5
STD60N3LH5 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 48A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 192A Pulsed Drain Current, and 0.0114 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 60W and can withstand temperatures up to 175°C.
ULTRA-LOW RESISTANCE
160 mJ
30 V
48 A
.0114 ohm
TO-252
60 W
192 A
Matte Tin (Sn) - annealed
SPB21N10G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 21 A;
21 A
90 W
IRF7413QTRPBF
IRF7413QTRPBF by International Rectifier is a N-CHANNEL FET with 13A max drain current and 2.5W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for various electronic devices requiring efficient power management in compact spaces.
13 A
2.5 W
IRF7341QTRPBF
IRF7341QTRPBF by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, suitable for SWITCHING applications. It features 2 ELEMENTS with BUILT-IN DIODE, capable of handling up to 42A IDM and has a low 0.05 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
140 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
55 V
5.1 A
.05 ohm
MS-012AA
R-PDSO-G8
8
2.4 W
42 A
DUAL
IRLR7843CPBF
IRLR7843CPBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 620A IDM, 1440mJ EAS, and 0.0033 ohm RDS(on). With a max power dissipation of 140W and operating temperature of 175°C, it offers high performance in a small outline package.
1440 mJ
161 A
30 A
.0033 ohm
TO-252AA
140 W
620 A
Matte Tin (Sn) - with Nickel (Ni) barrier
IRLR7843CTRPBF
IRLR7843CTRPBF by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 620A and EAS of 1440mJ, making it suitable for high-power operations. With a 0.0033 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175°C.
MATTE TIN OVER NICKEL
STB200N4F3
STB200N4F3 from STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
862 mJ
40 V
120 A
.004 ohm
NOT SPECIFIED
300 W
480 A
STB230NH03L
STB230NH03L by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, breakdown voltage of 30 V, and power dissipation up to 300 W. Ideal for compact designs with its surface mount configuration.
1150 mJ
80 A
.003 ohm
1000 A
STB50NF25
STB50NF25 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 45 A, a breakdown voltage of 250 V, and operates at temperatures from -55 °C to 150°C. Ideal for power management in compact designs.
250 V
45 A
.069 ohm
-55 Cel
245
160 W
180 A
STB15NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 14 A;
300 mJ
.299 ohm
56 A
IPB79CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31 W; JESD-30 Code: R-PSSO-G2; Terminal Finish: MATTE TIN;
17 mJ
.079 ohm
31 W
52 A
IRF7495TR
IRF7495TR by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a built-in diode for SWITCHING applications, with 58A IDM and 0.022 ohm RDS(on). This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power electronic devices.
180 mJ
7.3 A
.022 ohm
e0
58 A
Tin/Lead (Sn/Pb)
BSP129L6327
BSP129L6327 by Infineon Technologies is a N-CHANNEL Power FET with PLASTIC/EPOXY package. It has a Min DS Breakdown Voltage of 240V and Max Drain Current of 0.35A, making it suitable for applications requiring high power dissipation in small outline packages. Ideal for depletion mode operation at up to 150°C, this FET offers low drain-source resistance of 6 ohm for efficient performance.
240 V
.35 A
6 ohm
R-PDSO-G4
4
1.8 W
1.4 A
BTS282ZE-3180A
BTS282ZE-3180A by Infineon is a N-channel Power FET with 49V DS breakdown voltage and 320A IDM. It features a built-in diode, temp sensor, and 0.0095 ohm RDS(on), suitable for switching applications. With a max operating temp of 175°C, it's ideal for high-power systems requiring efficient performance.
LOGIC LEVEL COMPATIBLE
2000 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
49 V
.0095 ohm
R-PSSO-G7
7
320 A
FDS3572_NL
Fairchild Semiconductor
FDS3572_NL by Fairchild Semiconductor is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 8.9A ID and 0.016 ohm RDS(on), it offers high performance in a SMALL OUTLINE package for surface mount assembly.
515 mJ
80 V
8.9 A
.016 ohm
VNB35N07-E
STMicroelectronics VNB35N07-E is a N-CHANNEL FET with 60V DS Breakdown Voltage and 35A ID. Ideal for automotive applications, it features 125W Pd, 0.035 ohm RDS(on), and AEC-Q101 compliance.
COMPLEX
35 A
.035 ohm
AEC-Q101
1350 ns
800 ns
STD85N3LH5
STD85N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
165 mJ
.0065 ohm
70 W
STD8NM60N
STD8NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Its compact design with gull-wing terminals ensures efficient surface mounting.
AVALANCHE RATED
200 mJ
7 A
.65 ohm
28 A
DMT5015LFDF-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.97 W; Terminal Form: NO LEAD; Case Connection: DRAIN;
10.4 mJ
50 V
9.1 A
.015 ohm
15.2 pF
S-PDSO-N6
e4
6
SQUARE
1.97 W
Nickel/Palladium/Gold (Ni/Pd/Au)
DMT5015LFDF-7
DMT5015LFDF-7 by Diodes Inc. is a N-CHANNEL FET with 50V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 10.4mJ EAS, and 0.015 ohm RDS(ON). With a small outline package style and -55 to 150 °C operating temperature range, it offers high performance in power management systems.
NTMD6N04R2G
NTMD6N04R2G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 29A IDM. Ideal for SWITCHING applications, it features a 245mJ EAS rating and 0.034 ohm Drain-Source Resistance. With GULL WING terminals in an 8-terminal package, it operates in ENHANCEMENT MODE up to 150 °C.
245 mJ
5.8 A
4.6 A
.034 ohm
2 W
29 A
FET General Purpose Powers
Tin (Sn)
CSD25302Q2
Texas Instruments
CSD25302Q2 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 5A Drain Current, and 0.092 ohm On Resistance. With a max power dissipation of 2.4W and operating temperature of 150°C, it's ideal for high-performance electronic devices.
SOURCE
20 V
5 A
.092 ohm
ZXMN15A27KTC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
HIGH RELIABILITY
55 mJ
150 V
2.55 A
1.7 A
9.5 W
17.2 A
NTB6410ANG
The Onsemi NTB6410ANG is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for high-power applications requiring up to 188W dissipation. Suitable for surface mount designs in power electronics due to its small outline package and built-in diode.
500 mJ
.013 ohm
188 W
305 A
NTB6413ANG
NTB6413ANG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 178A IDM, and 0.028 ohm RDS(on). Ideal for applications requiring high power dissipation up to 136W in enhancement mode operation. Suitable for surface mount designs due to GULL WING terminals and small outline package style.
.028 ohm
136 W
178 A
NTD6415ANT4G
NTD6415ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 89A IDM, and 0.055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for power management applications. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and features a built-in diode.
79 mJ
23 A
.055 ohm
89 A
SI3445DV-T1-GE3
Vishay Intertechnology
SI3445DV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 8V DS Breakdown Voltage, 20A IDM, and 0.042 ohm RDS(ON). Ideal for power management applications due to its small outline package, 150°C max temp, and 2W power dissipation capability.
8 V
5.6 A
.042 ohm
R-PDSO-G6
PURE MATTE TIN
SI7228DN-T1-GE3
Vishay Intertechnology's SI7228DN-T1-GE3 is an N-channel FET with 2 elements and built-in diode for switching applications. Features include max pulsed drain current of 35A, avalanche energy rating of 9.8mJ, and max power dissipation of 23W. Ideal for high-power switching circuits requiring a small outline package design.
9.8 mJ
26 A
8.8 A
.02 ohm
S-XDSO-C6
23 W
Pure Matte Tin (Sn) - annealed
C BEND
DMP3017SFK-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 17 W; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;
104 mJ
7.8 A
686 pF
R-PDSO-N6
17 W
MIL-STD-202
NICKEL PALLADIUM GOLD
170 ns
45 ns
DMP3017SFK-7
DMP3017SFK-7 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 104mJ EAS, and 0.014 ohm RDS(ON). With a small outline package style and -55 to 150 °C operating temperature range, it offers high performance in various electronic designs.
DMT8012LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Feedback Capacitance (Crss): 10 pF; JESD-609 Code: e3;
9.5 A
10 pF
S-PDSO-N8
2.2 W
DMN6013LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Feedback Capacitance (Crss): 132 pF; Maximum Pulsed Drain Current (IDM): 58.3 A;
56.8 mJ
10.3 A
132 pF
S-PDSO-N5
5
2.1 W
58.3 A
NDS7002A_NB9GGTXA
Fairchild Semiconductor's NDS7002A_NB9GGTXA is a single N-channel power FET for switching applications. It features a 60V DS breakdown voltage, 1.5A max pulsed drain current, and 2 ohm max drain-source resistance. With Gull Wing terminals and small outline package style, it operates in an enhancement mode with a temperature range of -65 to 150°C.
.28 A
2 ohm
5 pF
TO-236AB
R-PDSO-G3
-65 Cel
.3 W
1.5 A
BSB019N03LXG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 30 V;
290 mJ
174 A
31 A
.0019 ohm
R-MBCC-N3
METAL
89 W
400 A
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