Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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Infineon's IPD65R600E6ATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 18A and 0.6 ohm RDS(on). Operating in enhancement mode, it has an EAS of 142mJ and can withstand temperatures from -55 to 150 °C.
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Provides good insulation and protection for the internal components, ensuring reliability and durability.
N-channel FETs typically have lower ON resistance and higher electron mobility, making them suitable for high-performance applications.
The built-in diode allows for reverse current protection, making this FET suitable for switching applications where backflow of current needs to be prevented.
Designed specifically for switching applications, ensuring fast and efficient operation.
Allows for easy and compact integration onto circuit boards, saving space and reducing assembly complexity.
Can handle high voltage levels, making it suitable for applications where voltage spikes may occur.
The rectangular shape allows for easy placement and alignment on the circuit board.
Gull wing terminals provide strong mechanical connection and are suitable for automated soldering processes.
Enhancement mode FETs offer higher input impedance and lower leakage current, resulting in better performance.
Can handle high current spikes without damage, making it suitable for power applications.
Can withstand energy spikes during avalanche breakdown, providing protection against voltage surges.
Simplified design with only 2 terminals for easy integration into circuits.
Compact size saves space on the circuit board, allowing for more components to be placed in a limited area.
MOSFET technology offers low ON resistance, high switching speed, and low power consumption.
Can operate at high temperatures without performance degradation, suitable for industrial applications.
Silicon is a common semiconductor material known for its stability and reliability.
Can operate in extreme cold environments, ensuring functionality in various conditions.
Tin finish provides good solderability, ensuring reliable connections.
Low ON resistance reduces power losses and improves efficiency in switching operations.
Single terminal position simplifies circuit design and layout.
Drain connection allows for easy heat dissipation, ensuring optimal performance under high power conditions.
Power Field Effect Transistors (FET) IPD65R600E6ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
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IPD65R600E6ATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
M39029/56-351
Carlisle Interconnect Technologies
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Type: CRIMP; Removal Tools: M81969/8-06, M81969/14-02; IEC Conformity: NO; Contact Gender: FEMALE;
1N4148WT
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RK73H2ATTD10R0F
Koa Speer Electronics
RK73H2ATTD10R0F by Koa Speer Electronics is a 0805 SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.25 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V.
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
SMBJ18CA
Thinking Electronic Industrial
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Amphenol
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;
M39029/58-360
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
L7805CV
STMicroelectronics
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
1N4148
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
Kec
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Rectron
Fairchild Semiconductor
Cheng-yi Electronic
Compensated Devices
RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
NDS355AN-NB9L007A
NDS355AN-NB9L007A by Fairchild Semiconductor is an N-CHANNEL power FET with a max drain current of 1.7A and a max power dissipation of 0.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
BSC123N08NS3GXT
BSC123N08NS3GXT by Infineon is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 220A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0123 ohm RDS(on) and 66W power dissipation.
FDT434P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 6 A; No. of Terminals: 4;
FDS4935A
Onsemi
FDS4935A by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It has a max drain current of 7A and a max drain-source on resistance of 0.023 ohm. This transistor is commonly used for switching applications in various electronic devices.
CSD19537Q3T
Texas Instruments
CSD19537Q3T by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 219A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 150°C. This SINGLE configuration transistor has a Surface Mount design with METAL-OXIDE SEMICONDUCTOR technology.
BSC014N06NSATMA1
BSC014N06NSATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.00145 ohm RDS(on), and 400A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 580mJ.
BSP297H6327XTSA1
Infineon's BSP297H6327XTSA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for power applications. Features include 2.64A IDM, 1.8Ω RDS(on), and AEC-Q101 compliance. Suitable for enhancement mode operation in automotive electronics due to its high reliability and performance.
IRF5305STRLPBF
IRF5305STRLPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, 110A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 110W and operates up to 175°C.
NTF2955T1G
NTF2955T1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 10.4A IDM, 225mJ EAS, and 0.185 ohm RDS(on). With ENHANCEMENT MODE operation and DUAL terminal position, it offers efficient power dissipation up to 1.92W in a SMALL OUTLINE package.
FDB52N20TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 357 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: SINGLE;
FDB035N10A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 333 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;
IRF640STRLPBF
Vishay Intertechnology
Vishay Intertechnology's IRF640STRLPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 72A IDM, 580mJ EAS, and 0.18 ohm RDS(on). With a max power dissipation of 130W and operating temperature up to 175°C, it suits various high-power electronic designs.
IRF3205ZPBF
IRF3205ZPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 440A IDM, 250mJ EAS, and 0.0065 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 170W at 175°C.
AUIRF7341QTR
AUIRF7341QTR by Infineon is a N-CHANNEL FET with 55V DS breakdown voltage, ideal for SWITCHING applications. Features include 42A max pulsed drain current, 140mJ avalanche energy rating, and 0.05 ohm max drain-source resistance. Suitable for high-power switching in various electronic devices.
IRLL024NTRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Case Connection: DRAIN;
IRF540PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 230 mJ; JESD-609 Code: e3;
IRFP450PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 760 mJ;
IRFH4253DTRPBF
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Drain Current (ID): 35 A; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PSMN4R8-100BSE
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 405 W; Terminal Position: SINGLE; Peak Reflow Temperature (C): 260;
MSC035SMA170B
Microsemi
Power Field-Effect Transistors;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
IPD70R600P7SAUMA1
Infineon
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;
FCB070N65S3
FCB070N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 110A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.07 ohm RDS(on), and 312W Pdiss. Suitable for surface mount with GULL WING terminals, it operates b/w -55 to 150 °C.
IPD60R180P7SAUMA1
Infineon's IPD60R180P7SAUMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode, it operates in enhancement mode with 53A IDM and 0.18 ohm RDS(on). The transistor is designed for surface mount installation in various electronic devices.
IPD60R210CFD7ATMA1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; JESD-609 Code: e3;
IPD600N25N3GATMA1
Infineon's IPD600N25N3GATMA1 is a N-CHANNEL FET with 250V DS Breakdown Voltage, 100A IDM, and 0.06 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 175°C. Package: PLASTIC/EPOXY, GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech.
IPD60R600C6ATMA1
Infineon's IPD60R600C6ATMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 19A pulsed drain current, 0.6ohm max on resistance, and 133mJ avalanche energy rating. Its GULL WING terminals and small outline package make it suitable for surface mount designs.
IPD60R280CFD7ATMA1
IPD60R280CFD7ATMA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage and 31A IDM. Ideal for switching applications, it features a built-in diode, 0.28 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs, this MOSFET has a small outline package style and can handle up to 9A drain current.
IPD60R950C6ATMA1
IPD60R950C6ATMA1 by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 600V. It is designed for switching applications, offering a max pulsed drain current of 12A and a max drain-source on resistance of 0.95 ohm.
IPD60R1K5CEAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 49 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 600 V;
IPD60R360P7SAUMA1
IPD60R360P7SAUMA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 26A IDM, and 0.36 ohm RDS(on). Ideal for switching applications due to its built-in diode and enhancement mode operation. Features GULL WING terminals in a SMALL OUTLINE package.
IPD60R380C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 600 V; No. of Elements: 1; Avalanche Energy Rating (EAS): 210 mJ;
IPD60R1K4C6ATMA1
Infineon's IPD60R1K4C6ATMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 8A IDM, 26mJ EAS, and 1.4Ω RDS(on). Its small outline package and GULL WING terminals make it suitable for enhancement mode operation in various electronic devices.
IPD60R180P7S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 600 V; Moisture Sensitivity Level (MSL): 3;
IPD60R380P6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e3;
IPD60R2K0C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 600 V;
IPD60R600P7SAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 16 A; Terminal Form: GULL WING;
IPD60N10S4L12ATMA1
IPD60N10S4L12ATMA1 by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 240A IDM. Ideal for automotive applications due to AEC-Q101 standard compliance, it features 0.015 ohm RDS(on) and 120mJ EAS for robust performance in enhancement mode operation.
IPD60R180P7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 56 mJ; Case Connection: DRAIN;
IPD60R280P7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; No. of Terminals: 2;
IPD60R600PFD7SAUMA1
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IPD60R1K0PFD7SAUMA1
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): 3;
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