Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTHD2102PT1G
Onsemi
NTHD2102PT1G by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 3.4A ID, and 0.058 ohm RDS(on). Ideal for SWITCHING applications, it features 2 elements with built-in diode in a small outline package for enhanced performance.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
8 V
3.4 A
.058 ohm
METAL-OXIDE SEMICONDUCTOR
R-XDSO-C8
e3
1
2
8
ENHANCEMENT MODE
UNSPECIFIED
RECTANGULAR
SMALL OUTLINE
260
P-CHANNEL
2.1 W
4.6 A
Not Qualified
Other Transistors
YES
TIN
C BEND
DUAL
30
SWITCHING
SILICON
IRFR13N20DTRRP
International Rectifier
IRFR13N20DTRRP by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a 0.235 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE at up to 150°C.
130 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
200 V
13 A
.235 ohm
TO-252AA
R-PSSO-G2
150 Cel
PLASTIC/EPOXY
N-CHANNEL
52 A
Matte Tin (Sn) - with Nickel (Ni) barrier
GULL WING
SINGLE
SUD50P04-13L-E3
Vishay Intertechnology
Vishay Intertechnology's SUD50P04-13L-E3 is a P-channel FET with 40V DS breakdown voltage, 100A IDM, and 0.013 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 93.7W.
80 mJ
40 V
60 A
50 A
.013 ohm
TO-252
175 Cel
93.7 W
100 A
MATTE TIN
NTD32N06G
NTD32N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm RDS(ON). Ideal for switching applications, it features an Enhancement Mode in a small outline package with Gull Wing terminals. Operating at up to 175 °C, it has a max power dissipation of 93.75W.
313 mJ
60 V
32 A
.026 ohm
93.75 W
90 A
FET General Purpose Powers
NTD32N06T4G
NTD32N06T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm RDS(ON). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 93.75W at 175 °C.
STS12NH3LL
STMicroelectronics
STS12NH3LL by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 12 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
LOW THRESHOLD
30 V
12 A
R-PDSO-G8
e4
2.5 W
48 A
FET General Purpose Power
NICKEL PALLADIUM GOLD
40
NTB45N06LG
NTB45N06LG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 150A Pulsed Drain Current, and 0.028 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
LOGIC LEVEL COMPATIBLE
240 mJ
45 A
.028 ohm
2.4 W
150 A
NTB45N06LT4G
NTB45N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.028 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 2.4W and can handle up to 150A pulsed drain current.
NTB30N06LG
NTB30N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 30A Drain Current, 0.046 ohm On Resistance, and 88.2W Power Dissipation in a SMALL OUTLINE package. Operating at up to 175 °C, it offers high performance in various electronic devices.
101 mJ
30 A
.046 ohm
88.2 W
Tin (Sn)
NTB30N06LT4G
NTB30N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 30A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 90A Pulsed Drain Current, and 0.046 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
NTB60N06G
NTB60N06G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 180A and EAS of 454mJ, operating in ENHANCEMENT MODE. With a Drain Current of 60A and 0.014 ohm RDS(on), this MOSFET is suitable for high-power circuit designs.
454 mJ
.014 ohm
150 W
180 A
NTB75N06G
NTB75N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
844 mJ
75 A
.0095 ohm
225 A
NTB75N06T4G
NTB75N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 2.4W Pdiss and 175 °C Tmax.
NTD110N02RG
NTD110N02RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 92.5W.
120 mJ
24 V
12.5 A
.0062 ohm
92.5 W
110 A
NTD110N02RT4G
NTD110N02RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). With a max power dissipation of 92.5W and operating temperature of 175 °C, it is ideal for high-power electronic systems requiring efficient switching capabilities.
IRL1104SPBF
IRL1104SPBF by International Rectifier is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 104A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 0.008 ohm RDS(on), and 175°C max operating temp. Perfect for high-power circuit designs requiring efficient switching capabilities in compact spaces.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
340 mJ
104 A
.008 ohm
167 W
416 A
IRL3715SPBF
IRL3715SPBF by International Rectifier is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 30A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 210A Pulsed Drain Current, and 0.014ohm On Resistance. Suitable for surface mount with GULL WING terminals, it operates in ENHANCEMENT MODE up to 175°C.
110 mJ
20 V
54 A
3.8 W
210 A
IRL3715ZSPBF
IRL3715ZSPBF by International Rectifier is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.011 ohm On Resistance, and 175°C Operating Temperature.
44 mJ
.011 ohm
45 W
200 A
MLD1N06CLT4G
MLD1N06CLT4G by Onsemi is a N-CHANNEL Power FET with 59V DS Breakdown Voltage and 1.8A Pulsed Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with built-in BIPOLAR TRANSISTOR, DIODE, and RESISTOR in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 40W at 150 °C temperature.
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
59 V
2 A
1 A
.75 ohm
40 W
1.8 A
MTD6N20ET4G
MTD6N20ET4G by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 18A Max Pulsed Drain Current, 0.7 ohm Max RDS(on), and 50W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE and has a max temperature of 150 °C, making it suitable for various power control systems.
54 mJ
6 A
.7 ohm
50 W
18 A
NTD3055-150G
NTD3055-150G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage and 27A IDM. Ideal for switching applications, it features a built-in diode, 30mJ EAS rating, and 0.15 ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 28.8W and temp range of -55 to 175 °C.
30 mJ
9 A
.15 ohm
40 pF
-55 Cel
28.8 W
27 A
75 ns
105 ns
NTD32N06LT4G
NTD32N06LT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.028 ohm RDS(ON). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 93.75W and can handle up to 90A pulsed drain current.
NTD4302T4G
NTD4302T4G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 28A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE in a SMALL OUTLINE package suitable for surface mount technology. Operating at up to 150°C, this MOSFET offers high power dissipation of 1.04W.
722 mJ
8.4 A
.01 ohm
1.04 W
28 A
NTD85N02RG
NTD85N02RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 85A, Max Pulsed Drain Current of 192A, and Min DS Breakdown Voltage of 24V. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 78.1W in a SMALL OUTLINE package style.
85 mJ
85 A
.0052 ohm
78.1 W
192 A
NTD85N02RT4G
NTD85N02RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 192A Max Pulsed Drain Current, and 0.0052 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
NTD4302G
NTD4302G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 28A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. This small outline transistor operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for high-power switching circuits.
75 W
STB16PF06LT4
STB16PF06LT4 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 16 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for compact power management in surface mount designs.
250 mJ
16 A
.165 ohm
TO-263AB
70 W
64 A
STL8NH3LL
STL8NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
8 A
.017 ohm
S-XQFP-N9
9
SQUARE
FLATPACK
NO LEAD
QUAD
NIC9N05TS1
NIC9N05TS1 by Onsemi is a N-CHANNEL FET with SINGLE configuration, suitable for surface mount applications. Features include 150 °C max operating temp, 260°C peak reflow temp, and METAL-OXIDE SEMICONDUCTOR technology. Ideal for power management in various electronic devices.
R-XUUC-N4
4
UNCASED CHIP
UPPER
NTD5414NT4G
NTD5414NT4G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage and 24A max drain current. Ideal for switching applications, it features a built-in diode, 55W power dissipation, and operates in enhancement mode. Suitable for surface mount assembly with Gull Wing terminals, this MOSFET has a compact rectangular package style.
86.4 mJ
24 A
.037 ohm
55 W
AEC-Q101
SI4890BDY-T1-E3
Vishay Intertechnology SI4890BDY-T1-E3 is a N-CHANNEL FET with 30V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.012 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 5.7W and can handle up to 150°C operating temperature.
20 mJ
.012 ohm
5.7 W
SILVER
FDD26AN06A0
Fairchild Semiconductor
FDD26AN06A0 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 7A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.058 ohm.
35 mJ
7 A
FDD8880_NL
FDD8880_NL by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a 13A Drain Current, 0.015 ohm On Resistance, and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has GULL WING terminals and can handle up to 55W power dissipation at 175°C.
53 mJ
35 A
.015 ohm
IRF7350PBF
IRF7350PBF by International Rectifier is a Power FET with N-Channel and P-Channel types. It features 100V DS Breakdown Voltage, 8.4A IDM, and 0.21 ohm RDS(on). Ideal for switching applications due to its separate configuration with built-in diode elements.
HIGH RELIABILITY
100 V
1.5 A
2.1 A
.21 ohm
MS-012AA
N-CHANNEL AND P-CHANNEL
1.3 W
STD20N20T4
STD20N20T4 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 18 A and a breakdown voltage of 200 V. It operates in enhancement mode with a low on-resistance of 0.125 Ω. Ideal for compact power management solutions, it comes in a small outline package.
.125 ohm
90 W
72 A
Matte Tin (Sn)
CSD25401Q3
Texas Instruments
CSD25401Q3 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 82A Max Pulsed Drain Current, and 0.0182 ohm Max RDS(on). With a PLASTIC/EPOXY body and ENHANCEMENT MODE operation, it offers reliable performance in various electronic systems.
AVALANCHE RATED
SOURCE
14 A
.0182 ohm
R-PDSO-N8
2.8 W
82 A
SI7483ADP-T1-E3
Vishay Intertechnology's SI7483ADP-T1-E3 is a P-CHANNEL FET for switching applications. Features include 30V DS breakdown voltage, 60A IDM, and 0.0057 ohm RDS(on). With a max power dissipation of 5.4W and operating temperature up to 150°C, it is ideal for high-power circuit designs.
.0057 ohm
R-XDSO-C5
5
5.4 W
SI7960DP-T1-E3
Vishay Intertechnology's SI7960DP-T1-E3 is an N-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.021 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and DC-DC converters.
27 mJ
6.2 A
.021 ohm
R-XDSO-C6
6
3.5 W
40 A
SUM110N06-3M4L-E3
Vishay Intertechnology's SUM110N06-3M4L-E3 is a N-channel FET with 60V DS breakdown voltage and 440A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.0034 ohm max RDS(on), and 175°C max operating temp.
280 mJ
.0034 ohm
375 W
440 A
CSD16321Q5C
CSD16321Q5C by Texas Instruments is a N-CHANNEL Power FET with 25V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 200A IDM, 218mJ EAS, and 0.0038 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a compact SMALL OUTLINE package with DUAL terminals.
218 mJ
25 V
.0038 ohm
3.1 W
CSD16325Q5C
CSD16325Q5C by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 500mJ EAS, and 0.0029 ohm Drain-Source On Resistance. This SINGLE transistor in PLASTIC/EPOXY package operates from -55 to 150 °C and has a max power dissipation of 3.1W.
500 mJ
33 A
.0029 ohm
IPD05N03LAG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: MATTE TIN; No. of Terminals: 2;
300 mJ
.0084 ohm
3
94 W
350 A
STB130NS04ZBT4
STB130NS04ZBT4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, breakdown voltage of 33 V, and operates at up to 175 °C. Ideal for power management in compact designs.
33 V
80 A
.009 ohm
300 W
320 A
SPD50N03S2-07G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;
.0073 ohm
136 W
STD7NK30Z
STD7NK30Z by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 5 A, a breakdown voltage of 300 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
300 V
5 A
.9 ohm
20 A
NTMFS4108NT3G
NTMFS4108NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 203A IDM, and 0.0022 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at 150 °C max temp, it offers high power dissipation of 6.25W in a small outline package.
450 mJ
22 A
13.5 A
.0022 ohm
R-PDSO-F5
6.25 W
203 A
FLAT
SI3445DV-T1-E3
Vishay Intertechnology's SI3445DV-T1-E3 is a P-CHANNEL FET with 8V DS Breakdown Voltage and 5.6A Drain Current. Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 2W. Suitable for surface mount designs with its GULL WING terminals and small outline package style.
5.6 A
.042 ohm
R-PDSO-G6
2 W
SI4410BDY-T1-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Elements: 1;
11.25 mJ
7.5 A
72 pF
5 W
44 ns
36 ns
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