Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STL8NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
Median Price
$1.558
Lifecycle Status
Suppliers In-Stock
5
In-Stock Inventory
1k+
Component Electronics Inc.
1+ parts
$1.150
100+ parts
$0.870
1k+ parts
$0.750
10k+ parts
-
Digiode
$1.966
Chip Stock
Vyrian
Anansix
Advanced Electronics
$0.845
$0.769
$0.693
IDEA Electronic Components Group
$1.432
$1.288
Corphita
$1.863
MKK Technologies
$2.692
DigiPath Technology Company
Perfect Parts
Authorized Procurement Solutions
Metaverse IC Inc.
Kepictronics
QUARKTWIN TECHNOLOGY LTD
Alle Elektronik GmbH
A-Z Elektronik GmbH
Assy Fe
Parana Technologies
$1.712
Microchip USA
N-Channel FETs generally provide faster switching speeds and better conductivity, making them ideal for high-performance applications.
The built-in diode enhances versatility in circuit designs, allowing for better management of reverse currents and increased protection.
Designed specifically for switching applications, this FET can effectively control power delivery, improving efficiency in electronic devices.
Being surface mountable allows for easier integration into compact circuit designs, saving space and improving performance.
With a breakdown voltage of 30V, this FET can operate reliably in a variety of applications without risk of damage from overvoltage.
The square package shape provides a stable mounting footprint, ensuring reliable performance even in demanding applications.
No lead design facilitates enhanced reliability and compatibility with modern surface mount technology, reducing potential failure points.
Enhancement mode operation makes this FET ideal for applications requiring high input impedance and low static power consumption.
A high pulsed drain current of 32A indicates that this FET can handle transient loads, making it suitable for demanding applications.
The absolute maximum drain current of 8A allows for reliable operation in applications where current levels are moderate yet substantial.
Having 9 terminals offers flexibility in connection options, enhancing design adaptability for various circuit applications.
With a maximum power dissipation of 50W, this FET can handle significant thermal loads, ensuring reliability in demanding environments.
The flatpack style enhances thermal performance and provides a low-profile option for space-constrained designs.
Utilizing MOSFET technology, this product demonstrates high efficiency and low power loss, beneficial for modern electronic applications.
The ability to operate at high temperatures (up to 150 °C) allows this FET to be used in harsh environments without loss of performance.
Silicon as the transistor material ensures good performance, thermal stability, and reliability, essential for electronic components.
The matte tin finish offers excellent solderability and corrosion resistance, ensuring longer-lasting connections in various applications.
A low on-resistance of 0.017 ohm minimizes power loss during operation, enhancing efficiency and performance in switching applications.
The quad terminal position provides versatility in circuit layouts, allowing for easier integration and enhanced thermal performance.
Direct connection of the drain ensures efficient heat dissipation and minimal resistance, crucial for high-performance applications.
A maximum reflow time of 30 seconds ensures compatibility with various soldering processes while minimizing thermal stress on the component.
The high peak reflow temperature capability (260 °C) allows for compatibility with lead-free solder technologies in modern manufacturing.
Power Field Effect Transistors (FET) STL8NH3LL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
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JESD-609 Code:
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Maximum Operating Temperature:
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STL8NH3LL Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM107H/883C
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;
BAV99
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Rfe International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CM
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Surge Components
Formosa Microsemi
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
U.FL-R-SMT-1(10)
Hirose Electric
U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Alpha & Omega Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Bytesonic Electronics
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
2N7002
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
Plessey Semiconductors Discrete Components Div
1N4148
Rectron
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
General Semiconductor
BAV99WT1G
BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.
SBAV99LT1G
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
IRF7328TRPBF
International Rectifier
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; Maximum Operating Temperature: 150 Cel;
IRF640
First Components International
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (Abs) (ID): 18 A; Operating Mode: ENHANCEMENT MODE;
FDMS86101DC
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 14.5 A;
IRF7404TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 340 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD8424H_F085
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FDB52N20TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 357 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: SINGLE;
FDMS86350ET80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 187 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 5;
IRF7425TRPBF-1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
CSD18540Q5B
Texas Instruments
CSD18540Q5B by Texas Instruments is an N-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0033 ohm Drain-Source On Resistance. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures from -55 to 175 °C.
IRF7401TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Pulsed Drain Current (IDM): 35 A;
CPH6354-TL-W
Onsemi's CPH6354-TL-W is a P-CHANNEL FET with 60V DS breakdown voltage, 16A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates in SMALL OUTLINE package style.
SI4946BEY-T1-E3
Vishay Siliconix
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Maximum Drain-Source On Resistance: .041 ohm; JESD-30 Code: R-PDSO-G8;
IRF3205PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Case Connection: DRAIN; No. of Elements: 1;
FDD4243-F085
FDD4243-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 24A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and operating temperature range from -55 to 175 °C, it meets AEC-Q101 standards for automotive use.
JANTX2N6796
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e0;
IRF9640STRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .5 ohm; Operating Mode: ENHANCEMENT MODE;
AUIRFR5305TRL
Infineon Technologies
AUIRFR5305TRL by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage and 110A IDM. Ideal for SWITCHING applications, it features a 0.065 ohm Drain-Source On Resistance and 280mJ Avalanche Energy Rating. Suitable for automotive use with AEC-Q101 standard compliance.
SI7157DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7157DP-T1-GE3 is a P-channel FET with 20V DS breakdown voltage, 300A IDM, and 0.0016 ohm max RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and matte tin terminal finish.
FDD4243
The Onsemi FDD4243 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 60A IDM, and 0.064 ohm RDS. Ideal for power management applications due to its high current handling capability and low on-resistance. Suitable for use in various electronic devices requiring efficient power control in compact designs.
LTC4451AV#TRPBF
Analog Devices
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
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STL8N10LF3
STMicroelectronics
STL8N10LF3 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features 31.2A pulsed drain current, 190mJ avalanche energy rating, and 0.05 ohm max on-resistance. The transistor operates in enhancement mode with a max power dissipation of 70W at 175°C, suitable for automotive AEC-Q101 standard applications.
STL8N80K5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STL8DN6LF6AG
STL8DN6LF6AG by STMicroelectronics is a N-CHANNEL FET with 60V DS breakdown voltage, suitable for SWITCHING applications. It features 2 elements with built-in diode, 128A max pulsed drain current, and 0.031 ohm max drain-source resistance. Ideal for high-power circuits requiring efficient switching capabilities.
STL8N10F7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STL85N6F3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 76 A;
STL8N65M2
STL8N6F7
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
STL8N6LF3
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STL80N12F7
Power Field-Effect Transistors;
STL80N4LL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 80 A;
STL8DN10LF3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Avalanche Energy Rating (EAS): 190 mJ; Package Body Material: PLASTIC/EPOXY;
STL8DN4LLF6
STL80NF3LL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .007 ohm;
STL8N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Package Shape: SQUARE; Case Connection: DRAIN;
STL80N3LLH6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;
STL80N4LLF3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .007 ohm;
STL8DN6LF3
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 20 A; Maximum Drain Current (Abs) (ID): 20 A;
STL86N3LLH6AG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Drain-Source On Resistance: .0076 ohm; Maximum Drain Current (Abs) (ID): 80 A;
STL80N10WF7
STL80N15F7
Supply Digital Components
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