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STT2PF60L

STMicroelectronics

STT2PF60L by STMicroelectronics

STT2PF60L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a 60V breakdown voltage, 2A max drain current, and operates at up to 150 °C. Its compact SO-6 package ensures easy surface mounting in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,876 parts In-Stock

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5,876

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Digiode

USA . 3,239 parts In-Stock

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3,239

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Freddi Giovanni

Italy . 3,000 parts In-Stock

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3,000

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Anansix

USA . 2,210 parts In-Stock

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2,210

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IDEA Electronic Components Group

UK . 1,089 parts In-Stock

1+ parts

$0.833

100+ parts

-

1k+ parts

$0.749

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1,089

$0.833

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$0.749

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MKK Technologies

India . 1,319 parts In-Stock

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$1.566

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1,319

$1.566

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DigiPath Technology Company

USA . 1,319 parts In-Stock

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$1.566

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1,319

$1.566

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AZTECH Wire

Italy . 870 parts In-Stock

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$21.610

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870

$21.610

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RC Electronics

USA . 117,134 parts In-Stock

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$0.090

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$0.080

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$0.080

117,134

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$0.090

$0.080

$0.080

Kepictronics

USA . 6,500 parts In-Stock

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6,500

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A-Z Elektronik GmbH

Germany . 4,950 parts In-Stock

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4,950

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,945 parts In-Stock

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3,945

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Parana Technologies

USA . 1,254 parts In-Stock

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$0.996

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1,254

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$0.996

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Corphita

USA . 433 parts In-Stock

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433

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Assy Fe

Spain . 150 parts In-Stock

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150

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Overview

Elevate your power management solutions with the STT2PF60L from STMicroelectronics, a trusted leader in semiconductor technology. This cutting-edge P-channel Power FET ensures exceptional efficiency and reliability for switching applications while its compact design allows seamless integration into various systems. With outstanding thermal performance and robust operational capabilities, it empowers engineers to innovate confidently, delivering top-notch performance and value in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package offers durability and strength, making it suitable for various environments.

Polarity or Channel Type: P-CHANNEL

P-channel configuration allows for easy integration in low-side switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies design and improves efficiency in applications requiring back EMF handling.

Transistor Application: SWITCHING

Optimized for switching applications, this FET can handle rapid on/off cycles effectively.

Surface Mount: YES

Surface mount capability allows for compact design and automated assembly processes.

Minimum DS Breakdown Voltage: 60 V

A minimum breakdown voltage of 60V ensures high voltage applications are supported safely.

Package Shape: RECTANGULAR

The rectangular shape contributes to efficient space usage on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide excellent solderability and mechanical stability during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation enhances performance and efficiency in various applications.

Maximum Pulsed Drain Current (IDM): 8 A

A pulsed current capability of 8A allows for handling brief surges in power requirements.

Maximum Drain Current (Abs) (ID): 2 A

With a maximum current rating of 2A, this FET is well-suited for low to medium power applications.

No. of Terminals: 6

Six terminals provide multiple connectivity options for diverse circuit designs.

Maximum Power Dissipation (Abs): 1.6 W

A power dissipation of 1.6W allows for efficient thermal management in device operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style promotes compact designs, ideal for space-constrained projects.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures low power consumption and high switching speed, making it suitable for modern applications.

Maximum Operating Temperature: 150 °C

An operating temperature of 150 °C allows reliable performance even in high-temperature environments.

Transistor Element Material: SILICON

Silicon as the element material offers proven reliability and performance in various electronic applications.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and provides corrosion resistance, ensuring long-term durability.

Maximum Drain Current (ID): 2 A

This specification confirms the versatility of the FET for a wide range of applications at moderate power.

Maximum Drain-Source On Resistance: 0.3 ohm

Low on-resistance minimizes power loss during operation, enhancing efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position allows for flexible circuit layout choices, improving design flexibility.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C ensures compatibility with modern soldering processes.

Technical Specifications

Power Field Effect Transistors (FET) STT2PF60L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

8 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STT2PF60L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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