Loading...

STC5NF20V

STMicroelectronics

STC5NF20V by STMicroelectronics

STC5NF20V by STMicroelectronics is a versatile N-channel MOSFET designed for efficient switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 5 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

$1.000

10k+ parts

-

5

$1.540

$1.150

$1.000

-

Cyclops Electronics Ltd

UK . 2,828 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,828

-

-

-

-

Vyrian

USA . 2,607 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,607

-

-

-

-

Anansix

USA . 1,674 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,674

-

-

-

-

Digiode

USA . 1,423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,423

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,255 parts In-Stock

1+ parts

$0.355

100+ parts

-

1k+ parts

$0.320

10k+ parts

-

1,255

$0.355

-

$0.320

-

MKK Technologies

India . 2,319 parts In-Stock

1+ parts

$0.668

100+ parts

-

1k+ parts

-

10k+ parts

-

2,319

$0.668

-

-

-

DigiPath Technology Company

USA . 2,319 parts In-Stock

1+ parts

$0.668

100+ parts

-

1k+ parts

-

10k+ parts

-

2,319

$0.668

-

-

-

AZTECH Wire

Italy . 355 parts In-Stock

1+ parts

$9.620

100+ parts

-

1k+ parts

-

10k+ parts

-

355

$9.620

-

-

-

Metaverse IC Inc.

Canada . 56,820 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,820

-

-

-

-

Kepictronics

USA . 41,994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

41,994

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 13,436 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,436

-

-

-

-

Corphita

USA . 3,926 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,926

-

-

-

-

A-Z Elektronik GmbH

Germany . 2,903 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,903

-

-

-

-

Parana Technologies

USA . 1,025 parts In-Stock

1+ parts

-

100+ parts

$0.425

1k+ parts

-

10k+ parts

-

1,025

-

$0.425

-

-

Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Overview

Elevate your designs with the STC5NF20V from STMicroelectronics—a top-tier N-channel Power FET that excels in efficiency and reliability. Crafted from premium materials, this versatile transistor is perfect for switching applications, ensuring optimal performance under demanding conditions. Trust in STMicroelectronics' legacy of innovation to deliver superior quality and value, empowering your projects with unmatched durability and effectiveness.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, making it suitable for a wide range of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer better performance and efficiency, making this product ideal for high-speed switching applications.

Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for better thermal management and protection against reverse polarity, enhancing reliability in circuits.

Transistor Application: SWITCHING

Designed for switching applications, this FET provides rapid on/off capabilities, crucial for efficient power management.

Surface Mount: YES

Surface mount technology enables compact designs and efficient use of board space, which is essential for modern electronics.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V allows this FET to safely handle a wide range of working voltages in various applications.

Package Shape: RECTANGULAR

The rectangular shape simplifies layout and integration into PCB designs, optimizing space usage.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability and facilitate easy connection to printed circuit boards.

Operating Mode: ENHANCEMENT MODE

Enhancement mode offers higher performance in terms of voltage control, enabling more efficient switching characteristics.

No. of Elements: 2

Having two elements allows for increased flexibility and application options in circuit designs.

Maximum Pulsed Drain Current (IDM): 20 A

A high pulsed drain current capability allows the FET to handle brief surges, making it suitable for high-power applications.

Maximum Drain Current (Abs): 5 A

Its ability to handle up to 5 A of continuous current ensures reliability in moderate power applications.

No. of Terminals: 8

Eight terminals provide multiple connection points for versatile applications, facilitating more complex circuit configurations.

Maximum Power Dissipation (Abs): 1.6 W

A power dissipation rating of 1.6 W allows this FET to operate efficiently under load without overheating, which enhances longevity.

Package Style (Meter): SMALL OUTLINE

The small outline package style promotes minimal space usage while supporting efficient thermal management.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers benefits such as low power consumption and high input impedance, making it ideal for sensitive applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliability in high-heat environments, making this FET suitable for robust applications.

Transistor Element Material: SILICON

Silicon is a well-established material for FETs, ensuring good thermal performance and reliability.

Terminal Finish: NICKEL PALLADIUM GOLD

This premium terminal finish enhances solderability and corrosion resistance, ensuring long-term performance.

Maximum Drain Current (ID): 5 A

Maximum drain current rating of 5 A provides reliable operation in power applications, handling moderate loads efficiently.

Maximum Drain-Source On Resistance: 0.045 ohm

A low on-resistance of 0.045 ohm reduces power loss during operation, enhancing overall efficiency.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB layouts and simplifies integration in various designs.

Technical Specifications

Power Field Effect Transistors (FET) STC5NF20V attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC5NF20V Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1