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SI7540DP-T1-E3

Vishay Intertechnology

SI7540DP-T1-E3 by Vishay Intertechnology

Vishay Intertechnology's SI7540DP-T1-E3 is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 7.6A and 0.017 ohm on-resistance, it operates in enhancement mode up to 150°C, making it suitable for various power management tasks.

Median Price

$0.970

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 51 parts In-Stock

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$0.970

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Vyrian

USA . 8,473 parts In-Stock

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Chip Stock

USA . 3,579 parts In-Stock

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Odintec Ltd.

Israel . 1,400 parts In-Stock

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1,400

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ComSIT Distribution GmbH

Germany . 370 parts In-Stock

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370

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Velocity Electronics

USA . 24 parts In-Stock

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Bastille Electronics

Australia . 23 parts In-Stock

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$0.970

100+ parts

$0.922

1k+ parts

$0.875

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$0.863

23

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$0.922

$0.875

$0.863

Argo Parts USA

USA . 2,468 parts In-Stock

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$0.970

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Continental Prestige Electronics

USA . 1,698 parts In-Stock

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$0.970

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$0.951

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$0.951

AZTECH Wire

Italy . 461 parts In-Stock

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$18.066

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Ampacity Inc.

Singapore . 1,595 parts In-Stock

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$64.050

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Kepictronics

USA . 2,835 parts In-Stock

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2,835

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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ChipstoGo Electronic ltd

UK . 116 parts In-Stock

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Overview

Discover the power of the SI7540DP-T1-E3 by Vishay Intertechnology, a cutting-edge Power Field Effect Transistor that offers unparalleled quality and performance. Designed with N-CHANNEL AND P-CHANNEL polarity, this transistor is perfect for switching applications. With a maximum pulsed drain current of 20 A and a low on-resistance of 0.017 ohm, this transistor provides efficient and reliable operation. Whether you're in need of high-speed switching or power management solutions, the SI7540DP-T1-E3 is the ideal choice for your next project. Elevate your designs with Vishay Intertechnology's innovative technology and expertise.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Provides flexibility in circuit design and allows for different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Enables efficient switching and control of current flow in the circuit.

Transistor Application: SWITCHING

Ideal for applications where rapid switching is required.

Minimum DS Breakdown Voltage: 12 V

Provides a high level of protection against voltage spikes and surges.

Package Shape: RECTANGULAR

Allows for easy and secure mounting on circuit boards.

Maximum Pulsed Drain Current (IDM): 20 A

Can handle high current loads during peak operation.

Maximum Drain Current (ID): 7.6 A

Suitable for applications requiring moderate current handling.

Maximum Power Dissipation (Abs): 3.5 W

Efficiently dissipates heat to prevent overheating.

Maximum Drain-Source On Resistance: 0.017 ohm

Provides low resistance for efficient current flow.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliability during reflow soldering process.

Peak Reflow Temperature °C: 260

Withstands high temperatures during soldering process.

Technical Specifications

Power Field Effect Transistors (FET) SI7540DP-T1-E3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

5.7 A

Maximum Drain Current (ID):

7.6 A

Maximum Drain-Source On Resistance:

.017 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XDSO-C6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

20 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI7540DP-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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