Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTB18N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, GULL WING terminals, and 175 °C Max Temp make it suitable for various power electronics designs.
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The use of plastic/epoxy material for the package body makes the transistor lightweight and durable, ideal for portable and long-lasting applications.
N-channel transistors are known for their fast switching speeds and high efficiency, making this transistor suitable for applications where performance is crucial.
The built-in diode simplifies circuit design and protects against reverse current flow, enhancing the overall reliability of the transistor in switching applications.
Designed specifically for switching applications, this transistor offers high efficiency and fast switching speeds, making it well-suited for power control and conversion tasks.
Being surface mountable allows for easy and efficient PCB assembly, saving space and simplifying the manufacturing process.
With a minimum breakdown voltage of 60V, this transistor can handle higher voltage levels, making it suitable for a wide range of power applications.
The rectangular package shape provides a compact form factor, allowing for efficient use of space in electronic designs.
The gull wing terminal form facilitates easy soldering and ensures a secure connection, enhancing the reliability of the transistor in various operating conditions.
Enhancement mode transistors offer easy control of the device through gate voltage, providing flexibility and precise switching characteristics in various applications.
The high maximum pulsed drain current rating of 45A allows for reliable operation under transient load conditions, making it suitable for high-power applications.
The high avalanche energy rating of 61mJ ensures robustness against voltage spikes and transient events, enhancing the overall reliability of the transistor.
With a maximum drain current rating of 15A, this transistor can handle moderate power levels, making it suitable for a wide range of applications.
Having only 2 terminals simplifies the circuit design and reduces the chances of wiring errors, making it easier to integrate into various electronic systems.
The high maximum power dissipation rating of 48.4W allows for efficient heat dissipation, ensuring reliable operation under high load conditions.
The small outline package style saves space on the PCB and allows for denser board designs, ideal for applications with space constraints.
Metal-oxide semiconductor technology offers high efficiency, low power consumption, and fast switching speeds, making this transistor suitable for power-sensitive applications.
With a high maximum operating temperature of 175 °C, this transistor can withstand elevated temperatures, making it suitable for high-temperature environments and industrial applications.
Silicon is a common semiconductor material known for its reliability and performance, ensuring stable operation of the transistor over a wide temperature range.
The tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection and long-term performance of the transistor.
The low drain-source on resistance of 0.09 ohm minimizes power losses and improves efficiency in power switching applications, making this transistor an energy-efficient choice.
Having a single terminal position simplifies the installation and connection process, ensuring ease of use and reducing the likelihood of wiring errors.
The drain case connection simplifies the circuit layout and allows for easy heat dissipation, enhancing the overall thermal performance of the transistor.
With a high peak reflow temperature of 260 °C, this transistor can withstand the soldering process without damage, ensuring reliable and consistent solder joints during assembly.
Power Field Effect Transistors (FET) NTB18N06T4G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
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Maximum Drain Current (Abs) (ID):
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Maximum Drain-Source On Resistance:
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JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
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No. of Terminals:
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NTB18N06T4G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Multiple Devices 03/Apr/2007
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
AB26TRB-32.768KHZ--T
Abracon
AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.
SS14
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
2N2222A
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
M39029/56-351
Glenair
CONNECTOR ACCESSORY; Associated Backshell Military - Specifications: MIL-DTL-38999; Material: COPPER ALLOY; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: FEMALE; DIN Conformity: NO;
FDLL4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
Vicor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
DS18B20Z+T&R
Analog Devices
DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.
Vishay Intertechnology
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
2N7002
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
FDV304P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
M39029/58-360
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
BAT54SLT1G
Onsemi
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
SMBJ18CA
Littelfuse
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
General Semiconductor
LM2675M-ADJ/NOPB
Texas Instruments
LM2675M-ADJ/NOPB by Texas Instruments is a voltage-mode switching regulator with 1A output current, 37V max output voltage, and 260kHz max switching frequency. Ideal for automotive applications due to its -40°C to 125°C operating temperature range and compact small outline package design.
U.FL-R-SMT-1(10)
Hirose Electric
U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.
ULN-2803A
Vishay Sprague
Vishay Sprague's ULN-2803A is an 8-bit peripheral driver with a max supply voltage of 3V. Featuring open-collector output characteristics, it offers built-in transient protections and operates b/w -20°C to 85°C. Ideal for applications requiring sink current flow direction, this rectangular-shaped driver has a terminal pitch of 2.54mm and turn-on/off time of 1us.
CSD18532Q5B
CSD18532Q5B by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 400A IDM, and 0.0043 ohm Drain-Source Resistance. Suitable for high-power switching circuits with operating temperatures from -55 to 150 °C.
IRFS4010TRLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Operating Temperature: 175 Cel; Package Shape: RECTANGULAR;
STN1NK80Z
STMicroelectronics
STN1NK80Z by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features 5A IDM, 16 ohm RDS(on), and 50mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
BSC220N20NSFDATMA1
Infineon Technologies
BSC220N20NSFDATMA1 by Infineon is a N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 208A Pulsed Drain Current, and 0.022 ohm On Resistance. With a max power dissipation of 214W, this MOSFET operates in an Enhancement Mode with an operating temperature range from -55 to 175°C.
BSC320N20NS3G
BSC320N20NS3G by Infineon Technologies is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It has a max IDM of 144A and EAS of 190mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features 0.032 ohm Drain-Source On Resistance and can handle up to 125W power dissipation.
SI7469DP-T1-E3
SI7469DP-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 80V DS Breakdown Voltage, 40A IDM, and 0.025 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 83W.
IRF3415STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
IRFB4115PBF
IRFB4115PBF by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 420A and EAS of 830mJ, making it suitable for high-power operations. With an operating temperature up to 175°C and 0.011 ohm RDS(on), this transistor offers reliable performance in various industrial settings.
PSMN4R8-100BSEJ
NXP Semiconductors
PSMN4R8-100BSEJ by NXP is a single N-channel power FET with 120A max drain current and 405W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as automotive systems or industrial equipment.
FQP30N06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; Qualification: Not Qualified; JESD-609 Code: e3;
IRFH4253DTRPBF
Infineon's IRFH4253DTRPBF is a N-CHANNEL Power FET with 35A Max Drain Current and 50W Max Power Dissipation. Ideal for high-power applications, it operates up to 150°C, featuring METAL-OXIDE SEMICONDUCTOR tech in a surface-mount package.
CSD18563Q5A-P
CSD18563Q5A-P by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 251A IDM, and 0.0108 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching tasks in various electronic devices.
AUIRF540Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92 W; Additional Features: AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY; JESD-609 Code: e3;
NTP8G202NG
NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.
SPP08N80C3XKSA1
SPP08N80C3XKSA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high voltage and current handling capabilities.
IRF9640STRLPBF
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .5 ohm; Operating Mode: ENHANCEMENT MODE;
NDT3055
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain-Source On Resistance: .1 ohm; Package Body Material: PLASTIC/EPOXY;
IRF3205ZPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 440 A; Case Connection: DRAIN;
FDMC86102LZ
FDMC86102LZ by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.024 ohm RDS(on), and 41W Pdiss. Suitable for surface mount designs in various electronic systems requiring high power efficiency and reliability.
G2R1000MT17D
Genesic Semiconductor
Power Field-Effect Transistors;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NTB150N65S3HF
The Onsemi NTB150N65S3HF is a N-CHANNEL FET with 650V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features 0.15 ohm RDS(on), 275mJ EAS, and operates b/w -55 to 150 °C. Suitable for surface mount with GULL WING terminals, this MOSFET has a max power dissipation of 192W in a RECTANGULAR package.
NTB110N65S3HF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 240 W; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
NTB18N06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48.4 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 61 mJ;
NTB18N06G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48.4 W; Maximum Operating Temperature: 175 Cel; Avalanche Energy Rating (EAS): 61 mJ;
NTB12N50T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 202 W; Case Connection: DRAIN; Maximum Drain Current (Abs) (ID): 12 A;
NTB15N40
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 202 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;
NTB125N02RT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 113.6 W; Avalanche Energy Rating (EAS): 120 mJ; Transistor Element Material: SILICON;
NTB12N50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 202 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 500 V;
NTB125N02R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 113.6 W; Minimum DS Breakdown Voltage: 25 V; Terminal Finish: TIN LEAD;
NTB13N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64.7 W; Moisture Sensitivity Level (MSL): 1; Operating Mode: ENHANCEMENT MODE;
NTB13N10G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64.7 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
NTB13N10T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64.7 W; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
NTB125N02RT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 113.6 W; JESD-30 Code: R-PSSO-G2; Case Connection: DRAIN;
NTB15N40T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 202 W; Maximum Pulsed Drain Current (IDM): 53 A; Package Style (Meter): SMALL OUTLINE;
NTB10N60T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 201 W; Minimum DS Breakdown Voltage: 600 V; Maximum Drain Current (Abs) (ID): 10 A;
NTB10N40T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 142 W; Maximum Pulsed Drain Current (IDM): 35 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTB10N40
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 142 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: SINGLE;
NTB10N60
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 201 W; No. of Elements: 1; JESD-609 Code: e0;
NTB125N02RG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 113.6 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
NTB13N10T4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64.7 W; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE;
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