Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
Median Price
$3.380
Lifecycle Status
Suppliers In-Stock
13
In-Stock Inventory
1k+
Farnell
1+ parts
100+ parts
$2.160
1k+ parts
$1.860
10k+ parts
-
Chip1Stop
$4.690
$2.340
$1.870
$1.780
Mouser Electronics
$4.700
$2.390
$1.880
Arrow
Verical
$1.686
Digiode
$3.990
Chip Stock
Cyclops Electronics Ltd
IBS Electronics
$3.801
$3.352
Vyrian
Anansix
Nova Conductors
Bristol Electronics
Advanced Electronics
$0.746
$0.679
$0.612
Aztec Data Supply Inc.
$1.023
IDEA Electronic Components Group
$1.563
$1.407
Semicontronic
$1.570
$1.531
$1.523
Ampacity Inc.
Corohmni
$2.360
MKK Technologies
$2.939
DigiPath Technology Company
Corphita
$3.780
Microchip USA
$15.175
Perfect Parts
iodParts Technologies Inc.
Lixinc
Futuretech Components
A-Z Elektronik GmbH
Alle Elektronik GmbH
Argo Parts USA
Parana Technologies
$1.869
Continental Prestige Electronics
Aranea Global
Power Field Effect Transistors (FET) STH240N10F7-2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Additional Features:
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
STH240N10F7-2 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - STH240N10F7 Datasheet Update 13/Apr/2019 SCTx/SCTx/STHx/STPSCx/STTHx/TN4050HP 26/Jul/2022
PCN Assembly/Origin - STripFET 21/Jul/2017
PCN Packaging - Mult Dev Inner Box Chg 9/Dec/2021
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
SMBJ18CA
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
1N4148WT
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
ROHM
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317D2TG
Onsemi
LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
LM107H
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;
261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
Rectron
Changzhou Starsea Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
FDC5614P
FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
ULN2803A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
LM107H/883
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
Cheng-yi Electronic
BSS138-7-F
Diodes Incorporated
Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.
2N2222A
Boca Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M39029/56-351
Amphenol
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
NE555D
NXP Semiconductors
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
STMicroelectronics
LL4148
TDK
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;
IRFR5305TRLPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; JESD-609 Code: e3; Terminal Form: GULL WING;
FDS8949
FDS8949 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 20A IDM. It features SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE configuration, suitable for applications requiring high power dissipation in small outline packages. Ideal for enhancing performance in electronic devices operating at temperatures up to 150°C.
IXTK3N250L
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Maximum Pulsed Drain Current (IDM): 8 A; JEDEC-95 Code: TO-264AA;
AUIRF3205Z
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 440 A;
NDT3055
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G4;
IRFB4115PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Avalanche Energy Rating (EAS): 830 mJ; Maximum Drain Current (Abs) (ID): 104 A;
SI7923DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7923DN-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 30V DS breakdown voltage, 20A max pulsed drain current, and 0.047 ohm max drain-source resistance. Ideal for power management in compact electronic devices with its small outline package and dual terminal position.
AUIRF4905STRL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 55 V;
IRF640
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 122 ns; Transistor Element Material: SILICON;
FDD8424H
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFB4227PBF
Infineon Technologies
IRFB4227PBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM and 0.024 ohm RDS(on), operating in ENHANCEMENT MODE. With a max power dissipation of 330W, it is suitable for high-power electronic systems.
FQT7N10LTF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Minimum DS Breakdown Voltage: 100 V; Package Shape: RECTANGULAR;
IRF9530PBF
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Transistor Application: SWITCHING; Terminal Position: SINGLE;
FDS6680A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
IRF5305PBF
IRF5305PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM and 0.06 ohm RDS(ON), suitable for high-power circuits. With a max power dissipation of 110W and operating temperature up to 175°C, it ensures reliable performance in various environments.
2N7002
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
SI7463ADP-T1-GE3
Vishay Intertechnology's SI7463ADP-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage and 70A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
IRFR5410TRPBF
IRFR5410TRPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, 52A IDM, and 0.205 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE. Features include 194mJ EAS, 66W Pdiss, and -55 to 150°C operating temp range.
FDB2532
FDB2532 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 79A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 400mJ and can handle up to 310W power dissipation.
IRFZ44NS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; No. of Elements: 1; Package Shape: RECTANGULAR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
STH2N120K5-2AG
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 245; Terminal Finish: MATTE TIN;
STH270N8F7-2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 315 W; Minimum DS Breakdown Voltage: 80 V; No. of Terminals: 2;
STH275N8F7-6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 315 W; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 775 mJ;
STH260N6F6-2
STH260N6F6-2 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 180A ID, and 0.002 ohm RDS(on). Ideal for SWITCHING applications due to its 720A IDM and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE, making it suitable for surface mount designs in high-power systems.
STH270N4F3-2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 180 A; No. of Elements: 1;
STH270N4F3-6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
STH240N75F3-6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 180 A; Avalanche Energy Rating (EAS): 600 mJ;
STH275N8F7-2AG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 315 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 180 A;
STH265N6F6-2AG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STH240N75F3-2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-PSSO-G2;
STH26N25
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STH260N6F6-6
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 180 A; Peak Reflow Temperature (C): NOT SPECIFIED;
STH240N10F7-6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; Maximum Pulsed Drain Current (IDM): 720 A;
STH265N6F6-6AG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 180 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STH220N6F7-2
Power Field-Effect Transistors;
STH26N25FI
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Drain Current (ID): 16 A; Maximum Drain Current (Abs) (ID): 16 A;
STH200N55F3-2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 55 V; Avalanche Energy Rating (EAS): 1000 mJ;
STH220N6F7-6
STH245N75F3-6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 75 V; Case Connection: DRAIN;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
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