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SH32N65DM6AG

STMicroelectronics

SH32N65DM6AG by STMicroelectronics

SH32N65DM6AG by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 120A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for power management in automotive and industrial systems.

Median Price

$16.900

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 10 parts In-Stock

1+ parts

$16.120

100+ parts

$11.600

1k+ parts

-

10k+ parts

-

10

$16.120

$11.600

-

-

Mouser Electronics

USA . 45 parts In-Stock

1+ parts

$17.680

100+ parts

$9.290

1k+ parts

-

10k+ parts

-

45

$17.680

$9.290

-

-

DigiKey

USA . 192 parts In-Stock

1+ parts

$18.230

100+ parts

$12.279

1k+ parts

$8.125

10k+ parts

-

192

$18.230

$12.279

$8.125

-

Newark

USA . 137 parts In-Stock

1+ parts

$21.760

100+ parts

$15.510

1k+ parts

$14.770

10k+ parts

-

137

$21.760

$15.510

$14.770

-

Arrow

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$10.325

10k+ parts

-

200

-

-

$10.325

-

Chip1Stop

Japan . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$13.500

10k+ parts

-

200

-

-

$13.500

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,249 parts In-Stock

1+ parts

$17.062

100+ parts

-

1k+ parts

-

10k+ parts

-

1,249

$17.062

-

-

-

Vyrian

USA . 7,032 parts In-Stock

1+ parts

-

100+ parts

-

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-

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7,032

-

-

-

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Anansix

USA . 1,843 parts In-Stock

1+ parts

-

100+ parts

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1,843

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,067 parts In-Stock

1+ parts

$16.164

100+ parts

-

1k+ parts

-

10k+ parts

-

4,067

$16.164

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 13,065 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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13,065

-

-

-

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Microchip USA

USA . 11,987 parts In-Stock

1+ parts

-

100+ parts

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11,987

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-

-

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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50

-

-

-

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Eastek

USA . 10 parts In-Stock

1+ parts

-

100+ parts

$19.440

1k+ parts

-

10k+ parts

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10

-

$19.440

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-

Overview

Elevate your designs with the SH32N65DM6AG from STMicroelectronics, a trusted leader in power solutions. This high-performance N-channel FET is perfect for demanding switching applications, ensuring reliability and efficiency. With its robust 650V breakdown voltage and impressive current handling, it empowers your projects while simplifying thermal management. Experience superior quality and innovation that drives performance, making it an essential component for automotive, industrial, and consumer electronics applications. Unlock unparalleled value and engineering excellence today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel configurations are essential for efficient switching applications, offering lower on-resistance and higher performance compared to P-channel FETs.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for flexible circuit designs and enhances reliability with built-in diode protection against reverse current.

Transistor Application: SWITCHING

Designed explicitly for switching applications, this FET provides fast switching times, making it ideal for power management and conversion.

Surface Mount: YES

Surface mount technology enables compact design and easier integration into modern electronic circuits, saving space on PCBs.

Minimum DS Breakdown Voltage: 650 V

A high breakdown voltage ensures reliability in high-voltage applications, making it suitable for industrial and automotive uses.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient layout on printed circuit boards, facilitating better space utilization.

Terminal Form: GULL WING

Gull wing terminals provide ease of soldering and better mechanical strength, ensuring robust connections on PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for improved efficiency and control in high-performance applications.

No. of Elements: 2

Having two elements enhances the capability for parallel applications, increasing overall current handling.

Maximum Pulsed Drain Current (IDM): 120 A

High pulsed drain current rating enables the device to handle transient loads, making it suitable for dynamic applications.

Avalanche Energy Rating (EAS): 778 mJ

A high avalanche energy rating indicates robustness against transient events, ensuring enhanced reliability in diverse applications.

No. of Terminals: 9

With 9 terminals, this FET offers enhanced connectivity options for complex circuit configurations and ease of integration.

Maximum Power Dissipation (Abs): 208 W

High power dissipation allows the FET to operate efficiently in demanding conditions without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it advantageous for applications where board space is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures high input impedance and fast switching speeds, enhancing overall performance.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C provides flexibility in harsh environments, expanding application scope.

Transistor Element Material: SILICON

Silicon elements provide excellent thermal stability and reliability, making it a standard choice for power applications.

Minimum Operating Temperature: -55 °C

This low operating temperature rating makes the FET suitable for extreme environments, particularly in aerospace and automotive sectors.

Terminal Finish: MATTE TIN

Matte tin finish offers excellent solderability, ensuring reliable connections during assembly and long-term operation.

Maximum Drain Current (ID): 32 A

The solid maximum drain current rating allows for substantial load handling in various applications, ensuring performance stability.

Maximum Drain-Source On Resistance: 0.097 ohm

Low on-resistance reduces power losses during operation, making it more efficient for high current applications.

Terminal Position: DUAL

Dual terminal positioning enhances layout options, allowing for better design flexibility in complex circuits.

Moisture Sensitivity Level (MSL): 3

MSL 3 rating indicates moderate sensitivity to moisture, ensuring it is suitable for various environments with typical handling precautions.

Maximum Time At Peak Reflow Temperature (s): 30

The capability to withstand a peak reflow temperature for 30 seconds ensures compatibility with standard soldering processes.

Peak Reflow Temperature °C: 245

A peak reflow temperature of 245 °C ensures compatibility with high-temperature soldering techniques used in electronics manufacturing.

Maximum Feedback Capacitance (Crss): 0.3 pF

Low feedback capacitance enhances switching speed and reduces signal distortion, which is crucial for high-performance applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures that the FET meets stringent automotive quality standards, making it suitable for automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) SH32N65DM6AG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

778 mJ

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

32 A

Maximum Drain-Source On Resistance:

.097 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.3 pF

JESD-30 Code:

R-PDSO-G9

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

2

No. of Terminals:

9

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

120 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SH32N65DM6AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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