Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STF17N62K3
STMicroelectronics
STF17N62K3 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 620V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE ENERGY RATED
315 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
620 V
15 A
.38 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
40 W
60 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STF30N65M5
STF30N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 22A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
500 mJ
650 V
22 A
.139 ohm
30 W
88 A
STF32N65M5
STF32N65M5 from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and a max drain current of 24A. It offers low on-resistance of 0.119Ω and operates at up to 150 °C. This versatile FET is suitable for high-efficiency power management.
650 mJ
24 A
.119 ohm
35 W
96 A
STI30N65M5
STI30N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 88A IDM, and 0.139 ohm RDS(on). Ideal for SWITCHING applications due to its 140W Pdiss, EAS of 500mJ, and operating temp up to 150°C. Package style is IN-LINE with THROUGH-HOLE terminals.
TO-262AA
R-PSIP-T3
IN-LINE
140 W
STI32N65M5
STI32N65M5 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 24A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
150 W
STL150N3LLH6
STL150N3LLH6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 150 A, a breakdown voltage of 30 V, and low on-resistance of 0.0035 Ω. Ideal for high-performance power management in compact designs.
DRAIN
30 V
150 A
.0035 ohm
R-PDSO-N5
5
SMALL OUTLINE
260
80 W
132 A
YES
Matte Tin (Sn) - annealed
NO LEAD
DUAL
30
STL85N6F3
STL85N6F3 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 85 A, a breakdown voltage of 60 V, and low on-resistance of 0.0057 Ω. This compact surface-mount device excels in power management solutions.
60 V
19 A
85 A
.0057 ohm
NOT SPECIFIED
76 A
STP17N62K3
STP17N62K3 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 620V breakdown voltage and 15A max drain current. It offers a compact through-hole design with built-in diode and operates at up to 150 °C. With a power dissipation of 190W, it's perfect for high-efficiency circuits.
190 W
STP32N65M5
STP32N65M5 from STMicroelectronics is a powerful N-channel FET ideal for switching applications. It features a 650V breakdown voltage, 24A max drain current, and 150W power dissipation. Its robust design suits high-efficiency power management systems.
STW17N62K3
STW17N62K3 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 620V breakdown voltage and 15A max drain current. It offers a low on-resistance of 0.38Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
TO-247
STW30N65M5
STW30N65M5 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 88A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
Matte Tin (Sn)
STW32N65M5
STW32N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 24A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STY112N65M5
STY112N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 93A max drain current, and 450W power dissipation. Ideal for high-efficiency power management in various electronic devices.
93 A
.022 ohm
450 W
372 A
IPF09N03LA
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 75 mJ;
LOGIC LEVEL COMPATIBLE
75 mJ
25 V
50 A
.0148 ohm
TO-252
R-PSSO-G3
e0
175 Cel
63 W
350 A
TIN LEAD
GULL WING
SPD02N50C3
Infineon's SPD02N50C3 is a N-CHANNEL FET with 500V DS Breakdown Voltage, 5.4A IDM, and 25W Power Dissipation. Ideal for power applications requiring high voltage tolerance and current handling capabilities in compact designs.
AVALANCHE RATED
50 mJ
500 V
1.8 A
3 ohm
TO-252AA
R-PSSO-G2
2
25 W
5.4 A
TIN
NID9N05CLT4
Onsemi
NID9N05CLT4 by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 35A, and max power dissipation of 28.8W. This MOSFET operates in enhancement mode with a max operating temperature of 175 °C, making it suitable for high-power switching applications.
ESD PROTECTED
160 mJ
52 V
9 A
.181 ohm
235
28.8 W
35 A
NID9N05CL
NID9N05CL by Onsemi is a Power FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, this FET has a max power dissipation of 28.8W and can withstand temperatures up to 175 °C.
SPN01N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
600 V
.3 A
6 ohm
R-PDSO-G4
4
1.8 W
1.6 A
FDD8447L_F085
Fairchild Semiconductor
FDD8447L_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0085 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 65W and can withstand temperatures up to 175°C.
40 mJ
40 V
.0085 ohm
-55 Cel
65 W
AEC-Q101
NTD2955-1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Transistor Element Material: SILICON; Package Style (Meter): IN-LINE;
216 mJ
12 A
.18 ohm
P-CHANNEL
55 W
36 A
Other Transistors
NTD2955G
NTD2955G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 36A IDM, and 0.18 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 55W. The transistor has a SILICON element material and can withstand temperatures up to 175°C.
NTD20P06L-1G
NTD20P06L-1G by Onsemi is a P-channel power FET with 60V DS breakdown voltage and 15.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. The transistor has a 0.15 ohm max drain-source resistance and can handle up to 50A pulsed drain current.
304 mJ
15.5 A
.15 ohm
54 W
NTD20P06LG
NTD20P06LG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 50A and EAS of 304mJ, operating in ENHANCEMENT MODE. With a Drain Current of 15.5A and 0.15 ohm RDS(on), it offers high performance in a SMALL OUTLINE package for various power applications.
STD150NH02L-1
STD150NH02L-1 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 150 A and a breakdown voltage of 24 V. It operates in enhancement mode with low on-resistance of 0.0035 Ω. This robust transistor supports high power dissipation up to 125 W.
LOW THRESHOLD
24 V
TO-251AA
125 W
600 A
STW20NK70Z
STW20NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 20A max drain current, and 300W power dissipation. Ideal for high-efficiency power management in various electronic devices.
700 V
20 A
.285 ohm
TO-247AC
300 W
80 A
STD60NH03LT4
STD60NH03LT4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Its compact design with gull-wing terminals ensures efficient surface mounting.
300 mJ
.017 ohm
70 W
240 A
STD70NH02LT4
STD70NH02LT4 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact designs.
360 mJ
.008 ohm
STP36NF06FP
STP36NF06FP from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 18 A, breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for efficient power management in various electronic devices.
200 mJ
18 A
.04 ohm
72 A
STP36NF06L
STP36NF06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 120A IDM, and 0.05 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 70W.
225 mJ
30 A
.05 ohm
120 A
STP36NF06
STP36NF06 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 30 A and a breakdown voltage of 60 V. It operates in enhancement mode with a low on-resistance of 0.04 Ω. This robust transistor supports high power dissipation up to 70 W.
STP7NK30Z
STP7NK30Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 300V breakdown voltage, 20A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
130 mJ
300 V
5 A
.9 ohm
50 W
STY60NK30Z
STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.
700 mJ
.045 ohm
STE48NM60
STE48NM60 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and max drain current of 48A. It supports high power dissipation up to 450W and operates at a max temp of 150 °C. Perfect for efficient power management in various electronic devices.
850 mJ
48 A
.11 ohm
R-XUFM-X4
UNSPECIFIED
192 A
UPPER
STF20NM60D
STF20NM60D by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 80A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
.29 ohm
45 W
DMP3120L-7
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3;
HIGH RELIABILITY
2.8 A
.12 ohm
R-PDSO-G3
1.4 W
IPB097N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Drain Current (Abs) (ID): 70 A; Terminal Finish: MATTE TIN;
90 mJ
80 V
70 A
.0097 ohm
TO-263AB
245
100 W
280 A
FQH140N10
FQH140N10 by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 560A IDM, and 0.01 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 375W and can handle up to 175°C temperature.
1500 mJ
100 V
140 A
.01 ohm
375 W
560 A
STF3HNK90Z
STF3HNK90Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 900V breakdown voltage and 12A pulsed drain current. It operates in enhancement mode with a max power dissipation of 25W. This robust transistor ensures reliable performance in high-temperature environments up to 150 °C.
900 V
3 A
4.2 ohm
STP3HNK90Z
STP3HNK90Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 900V breakdown voltage and a max drain current of 3A. It operates in enhancement mode with a power dissipation of up to 90W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
90 W
STW18NK80Z
STW18NK80Z by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 19 A, breakdown voltage of 800 V, and power dissipation up to 350 W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.
800 V
350 W
STW13NK80Z
STW13NK80Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 12 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 230 W. This versatile transistor is suitable for high-voltage circuits.
450 mJ
.65 ohm
230 W
NTR4501NT1
NTR4501NT1 by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a max drain current of 3.2A, operating in enhancement mode with a max power dissipation of 1.25W. With a small outline package style and peak reflow temperature of 235 °C, it offers efficient performance in various electronic devices.
20 V
3.2 A
.08 ohm
TO-236AB
1.25 W
10 A
Tin/Lead (Sn80Pb20)
NTR4501NT3G
NTR4501NT3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for use in small outline packages where high power dissipation and low on-resistance are required.
NTR4501NT3
NTR4501NT3 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for various power management tasks.
STB20NK50ZT4
STB20NK50ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
17 A
.27 ohm
68 A
STB70NH03LT4
STB70NH03LT4 from STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact designs.
85 W
STB9NK60ZDT4
STB9NK60ZDT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
235 mJ
7 A
.95 ohm
104 W
28 A
STF9NK60ZD
STF9NK60ZD by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of up to 32W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
32 W
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