Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AO4413L
Alpha & Omega Semiconductor
AO4413L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 15A ID, 0.0085 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and RECTANGULAR package shape, it's designed for high-power efficiency in various electronic systems.
SINGLE WITH BUILT-IN DIODE
30 V
15 A
.0085 ohm
METAL-OXIDE SEMICONDUCTOR
1067 pF
R-PDSO-G8
1
8
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
P-CHANNEL
3 W
80 A
YES
GULL WING
DUAL
SWITCHING
SILICON
AO3422L
AO3422L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 55V DS Breakdown Voltage and 10A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.16 ohm Drain-Source On Resistance.
55 V
2.1 A
.16 ohm
12.6 pF
TO-236
R-PDSO-G3
3
N-CHANNEL
1.25 W
10 A
AO4490L
AO4490L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.8W and can handle up to 16A drain current.
16 A
.0072 ohm
238 pF
2.8 W
120 A
AOTF5N50
AOTF5N50 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 500V DS Breakdown Voltage. It has 18A IDM and 203mJ EAS, suitable for power applications requiring high drain current and energy ratings. Ideal for use in circuits where low on-resistance and fast switching times are critical.
203 mJ
ISOLATED
500 V
5 A
1.5 ohm
5.9 pF
TO-220AB
R-PSFM-T3
FLANGE MOUNT
NOT SPECIFIED
35 W
18 A
NO
THROUGH-HOLE
SINGLE
70.4 ns
52.4 ns
AOTF7N65
AOTF7N65 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 24A IDM, 347mJ EAS, and 1.56ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and fast switching times (ton:97ns, toff:128ns).
347 mJ
650 V
7 A
1.56 ohm
9 pF
38.5 W
24 A
128 ns
97 ns
AOTF9N70
AOTF9N70 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 700V DS Breakdown Voltage, ideal for SWITCHING applications. It features 33A IDM, 154mJ EAS, and 1.2ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 50W and can withstand temperatures from -55 to 150°C.
154 mJ
700 V
9 A
1.2 ohm
11 pF
50 W
33 A
AOD5N50
AOD5N50 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 17A Pulsed Drain Current, 235mJ Avalanche Energy Rating, and 1.6ohm Drain-Source On Resistance. Suitable for high-power operations in various electronic devices.
235 mJ
DRAIN
1.6 ohm
7 pF
TO-252
R-PSSO-G2
2
-50 Cel
104 W
17 A
AOB1608L
AOB1608L by Alpha & Omega Semiconductor is an N-CHANNEL Power FET with a 60V DS Breakdown Voltage. It features a built-in diode, 256A IDM, and 0.0073 ohm RDS(on), making it ideal for SWITCHING applications. With a max power dissipation of 333W and operating temperature range from -55 to 175 °C, this MOSFET is suitable for high-power electronic systems.
638 mJ
60 V
140 A
11 A
.0073 ohm
80 pF
TO-263AB
175 Cel
333 W
256 A
AOD4454
AOD4454 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A Max Pulsed Drain Current and 0.11 ohm Max Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 100W and can withstand temperatures from -55 to 175 °C.
1.3 mJ
150 V
20 A
.11 ohm
31 pF
100 W
40 A
AON6234
AON6234 by Alpha & Omega Semiconductor is a N-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 220A and an avalanche energy rating of 125mJ. This transistor is commonly used for switching applications.
125 mJ
40 V
85 A
.005 ohm
77 pF
R-PDSO-F8
83 W
220 A
FLAT
AON6411
AON6411 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 340A IDM and 245mJ EAS, operating in ENHANCEMENT MODE at -55 to 150 °C. The METAL-OXIDE SEMICONDUCTOR technology ensures 0.0036 ohm RDS(ON) and 1395pF Crss for efficient performance.
245 mJ
20 V
.0036 ohm
1395 pF
156 W
340 A
AON7242
AON7242 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 255A and EAS of 115mJ, suitable for high-power operations. With an operating temperature range from -55 to 150 °C, it offers reliable performance in various environments.
115 mJ
50 A
.0058 ohm
70 pF
S-PDSO-N8
SQUARE
255 A
NO LEAD
AOTF12N30
AOTF12N30 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 29A IDM and 430mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 36W and -55 to 150 °C temperature range, it offers reliable performance in various electronic systems.
430 mJ
300 V
11.5 A
.42 ohm
36 W
29 A
IRFH7921TR2PBF
International Rectifier
IRFH7921TR2PBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.1W. This surface mount transistor has a package style of SMALL OUTLINE and can handle temperatures from -55 to 150°C.
29 mJ
34 A
120 pF
R-PDSO-F5
5
3.1 W
AOT284L
AOT284L by Alpha & Omega Semiconductor is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features 400A IDM, 211mJ EAS, and 0.0057 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures from -55 to 175 °C.
211 mJ
80 V
105 A
.0057 ohm
48 pF
150 W
400 A
NTMKB4895NT1G
Onsemi
The Onsemi NTMKB4895NT1G is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features 0.006 ohm Drain-Source Resistance and 80mJ EAS rating. This ENHANCEMENT MODE transistor in CHIP CARRIER package is suitable for high-power circuit designs.
80 mJ
.006 ohm
R-XBCC-N2
UNSPECIFIED
CHIP CARRIER
Not Qualified
BOTTOM
NTMKE4891NT1G
NTMKE4891NT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 210A IDM and 0.0026 ohm RDS(ON), suitable for high-power operations. With METAL-OXIDE SEMICONDUCTOR technology and SILICON material, it offers efficient performance in ENHANCEMENT MODE operation.
184 mJ
25 V
26.7 A
.0026 ohm
R-XBCC-N3
210 A
RSD050N06TL
ROHM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
.14 ohm
e2
260
15 W
FET General Purpose Power
TIN COPPER
10
RSD150N06TL
ROHM RSD150N06TL is a N-CHANNEL FET with 60V DS breakdown voltage, 15A max drain current, and 0.051 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 20W.
.051 ohm
20 W
30 A
STI16N65M5
STMicroelectronics
STI16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.279 ohm RDS(on). Ideal for SWITCHING applications due to its 90W power dissipation and ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
ULTRA-LOW RESISTANCE
200 mJ
12 A
.279 ohm
TO-262AA
R-PSIP-T3
e3
IN-LINE
90 W
48 A
Matte Tin (Sn)
STW16N65M5
STW16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.279 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 12A ID and 90W power dissipation. Package style is flange mount with matte tin finish, suitable for high temperature environments up to 150 °C.
TO-247
FDD14AN06LA0_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDD14AN06LA0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 9.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 55mJ and can handle up to 125W power dissipation at temperatures ranging from -55°C to 175°C.
55 mJ
9.5 A
.0116 ohm
TO-252AA
125 W
AEC-Q101
MATTE TIN
30
NTMFS5832NLT1G
NTMFS5832NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 443A pulsed drain current. Ideal for applications requiring high power dissipation and low on-resistance in small outline packages.
134 mJ
111 A
.0065 ohm
96 W
443 A
NP160N04TUJ-E1-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .002 ohm;
160 A
.002 ohm
R-PSSO-G6
6
250 W
640 A
NP80N04NLG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; JEDEC-95 Code: TO-262AA; Additional Features: LOGIC LEVEL COMPATIBLE;
LOGIC LEVEL COMPATIBLE
.0048 ohm
115 W
300 A
NP80N04PLG-E1B-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Peak Reflow Temperature (C): NOT SPECIFIED; Additional Features: LOGIC LEVEL COMPATIBLE;
.0045 ohm
NP80N04PUG-E1B-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 80 A;
NP80N055MDG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 55 V;
.0069 ohm
200 A
NP80N06PLG-E1B-AY
NP80N06PLG-E1B-AY by Renesas Electronics is a N-channel FET with 60V DS breakdown voltage and 180A IDM. Ideal for switching applications, it features 0.0083 ohm max RDS(on) and operates in enhancement mode. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation up to 175°C.
.0083 ohm
180 A
NP82N04MDG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Maximum Drain Current (ID): 82 A; Additional Features: LOGIC LEVEL COMPATIBLE;
82 A
143 W
328 A
NP82N055MUG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 82 A;
NP82N055NUG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
NP90N04VUG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; JEDEC-95 Code: TO-252; Transistor Element Material: SILICON;
90 A
.004 ohm
105 W
NP90N06VLG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
.0078 ohm
NDD02N60Z-1G
NDD02N60Z-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 9A IDM, and 4.8 ohm RDS(on). It's an N-CHANNEL transistor in PLASTIC/EPOXY package ideal for power applications requiring high voltage handling and low on-resistance.
120 mJ
600 V
2.2 A
4.8 ohm
57 W
FET General Purpose Powers
TIN
NDF06N60ZH
NDF06N60ZH by Onsemi is a Power FET with 600V DS Breakdown Voltage, 28A IDM, and 113mJ EAS. Ideal for applications requiring high power dissipation in enhancement mode operation. Suitable for use in circuits where low drain-source resistance and high current handling are essential.
113 mJ
7.1 A
28 A
NTP5863NG
NTP5863NG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 383A IDM, and 0.0078 ohm RDS(ON). It is used in power applications requiring high drain current handling capabilities.
157 mJ
97 A
383 A
CSD16323Q3C
Texas Instruments
CSD16323Q3C by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 112A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.0072 ohm Drain-Source On Resistance.
AVALANCHE RATED
60 A
21 A
R-PDSO-N8
112 A
CSD17506Q5A
CSD17506Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 150A IDM, and 0.0053 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
259 mJ
100 A
23 A
.0053 ohm
65 pF
3.2 W
150 A
NTP5864NG
NTP5864NG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 252A IDM, and 0.0124 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for high-power applications. Ideal for circuits requiring high current handling and low on-resistance.
63 A
.0124 ohm
107 W
252 A
Tin (Sn)
NP180N055TUJ-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 348 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
.0023 ohm
348 W
720 A
NP90N03VHG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 360 A;
.0032 ohm
360 A
NP90N03VLG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 90 A; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SIA444DJT-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIA444DJT-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 12A max Drain Current and 0.017 ohm max On Resistance. This MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.
.017 ohm
S-PDSO-N3
19 W
SIS478DN-T1-GE3
Vishay Intertechnology's SIS478DN-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage. Ideal for switching applications, it features 40A IDM and 0.02 ohm RDS(on). With a max power dissipation of 15.6W and operating temperature up to 150°C, this MOSFET is suitable for various high-power electronic designs.
5 mJ
.02 ohm
S-PDSO-C5
15.6 W
C BEND
40
SQM120N03-1M5L_GE3
Vishay Intertechnology's SQM120N03-1M5L_GE3 is a N-channel Power FET with 30V DS Breakdown Voltage and 120A ID. Ideal for applications requiring high pulsed drain current up to 480A, such as power management systems. Features include built-in diode, 0.0015 ohm RDS(on), and EAS of 336mJ for robust performance in enhancement mode operation.
336 mJ
.0015 ohm
480 A
VS-FB190SA10
VS-FB190SA10 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 720A IDM, 700mJ EAS, and 0.0065 ohm Drain-Source On Resistance. With a max power dissipation of 568W and operating temperature of 150°C, it offers high performance in various industrial settings.
700 mJ
100 V
190 A
R-PUFM-X4
4
568 W
UPPER
FQD3P50TM_F085
FQD3P50TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 8.4A and EAS of 250mJ, operating in ENHANCEMENT MODE at up to 150°C.
250 mJ
4.9 ohm
8.4 A
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