Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STP15N65M5
STMicroelectronics
STP15N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 0.34 ohm RDS(on), operating in ENHANCEMENT MODE. The transistor has a single configuration with built-in diode, suitable for high-power RECTANGULAR package designs.
160 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
650 V
11 A
.34 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
44 A
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STW15N80K5
STW15N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. It features 14A max drain current, 0.375 ohm max on resistance, and 56A pulsed drain current. The transistor operates in enhancement mode with a max power dissipation of 190W at 150°C.
800 V
14 A
.375 ohm
TO-247
e3
150 Cel
190 W
56 A
FET General Purpose Power
Matte Tin (Sn)
NTMFS4C05NT3G
Onsemi
NTMFS4C05NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 174A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.005 ohm RDS(on), and operates in the -55 to 150 °C temperature range.
84 mJ
30 V
21.7 A
11.9 A
.005 ohm
59 pF
R-PDSO-F6
6
-55 Cel
SMALL OUTLINE
260
33 W
174 A
YES
MATTE TIN
FLAT
DUAL
30
STD24N06LT4G
STD24N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 24A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.045 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount designs with a max power dissipation of 62.5W at 175 °C.
162 mJ
60 V
24 A
.045 ohm
R-PSSO-G2
2
175 Cel
62.5 W
72 A
AEC-Q101
GULL WING
STD25P03LT4G
The Onsemi STD25P03LT4G is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM and 0.08 ohm RDS(ON), suitable for ENHANCEMENT MODE operation. This MOSFET comes in a PLASTIC/EPOXY package with GULL WING terminals, meeting AEC-Q101 standards.
200 mJ
25 A
.08 ohm
P-CHANNEL
75 A
TIN
TK6A60D(STA4,Q,M)
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY;
173 mJ
ISOLATED
600 V
6 A
1.25 ohm
STH240N75F3-2
STH240N75F3-2 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 180A ID, and 3Ω RDS(on). Ideal for SWITCHING applications due to its 720A IDM and 300W Pd. The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C.
600 mJ
75 V
180 A
3 ohm
300 W
720 A
FET General Purpose Powers
NVD5890NLT4G
NVD5890NLT4G by Onsemi is an N-channel Power FET with a 40V DS breakdown voltage and 123A max drain current. Ideal for switching applications, it features a built-in diode, 320mJ avalanche energy rating, and 0.0055 ohm max on-resistance. Suitable for high-power operations in automotive electronics due to AEC-Q101 compliance.
320 mJ
40 V
123 A
.0055 ohm
107 W
400 A
STB15N65M5
STB15N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 44A IDM, and 0.34 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 85W Power Dissipation and -55 to 150 °C Temperature Range.
TO-263AB
245
85 W
Matte Tin (Sn) - annealed
STF11N65M5
STF11N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 36A IDM, and 0.48 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. Operating temp ranges from -55 to 150 °C with 25W max power dissipation.
130 mJ
9 A
.48 ohm
25 W
36 A
STF18N65M5
STF18N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 60A IDM, and 0.22 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
210 mJ
15 A
.22 ohm
60 A
STF34N65M5
STF34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 112A IDM, and 0.11 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE at up to 150 °C.
510 mJ
28 A
.11 ohm
6.3 pF
35 W
112 A
STI18N65M5
STI18N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 210mJ EAS, and 0.22 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W at 150 °C.
TO-262AA
R-PSIP-T3
IN-LINE
110 W
STI57N65M5
STI57N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 168A IDM, and 0.063 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 960mJ EAS rating.
960 mJ
42 A
.063 ohm
168 A
STP10P6F6
STP10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 40A IDM, 80mJ EAS, and 0.116 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and can handle up to 30W power dissipation.
80 mJ
10 A
.116 ohm
30 W
40 A
STP11N65M5
STP11N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 36A IDM, and 0.48 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 85W. The transistor has a temp range of -55 to 150 °C and comes in a rectangular package with through-hole terminals.
STP36N55M5
STP36N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, ideal for SWITCHING applications. It features 33A Drain Current, 0.08 ohm On Resistance, and 190W Power Dissipation in a RECTANGULAR package. Operating at up to 150°C, it offers reliable performance in various industrial settings.
550 V
33 A
132 A
STP38N65M5
STP38N65M5 by STMicroelectronics is a Power FET with 650V DS Breakdown Voltage, 120A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
660 mJ
30 A
.095 ohm
120 A
STW20N65M5
STW20N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 72A IDM, and 0.19 ohm RDS. It's used for SWITCHING applications due to its 130W power dissipation, 150°C max temp, and METAL-OXIDE SEMICONDUCTOR technology.
270 mJ
18 A
.19 ohm
130 W
STW34N65M5
STW34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 112A IDM and 0.11 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in various power electronics designs.
STW36N55M5
STW36N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, 33A Drain Current, and 0.08 ohm On Resistance. Ideal for SWITCHING applications due to its 132A Pulsed Drain Current capability. Operating in ENHANCEMENT MODE, it has a max power dissipation of 190W at 150 °C.
STY139N65M5
STY139N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 130A max drain current and 0.017 ohm on-resistance. Operating in enhancement mode, this MOSFET has a max pulsed drain current of 520A and an avalanche energy rating of 2400mJ.
2400 mJ
130 A
.017 ohm
520 A
NVD4856NT4G
NVD4856NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Max Pulsed Drain Current, and 0.0068 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in automotive and industrial electronics due to its 60W Power Dissipation capability.
180.5 mJ
25 V
89 A
13.3 A
.0068 ohm
60 W
179 A
SPD07N20GBTMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 28 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
AVALANCHE RATED
120 mJ
200 V
7 A
.4 ohm
TO-252
DMG9N65CT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; No. of Elements: 1; Minimum DS Breakdown Voltage: 650 V;
HIGH RELIABILITY
.0013 ohm
FDB3632_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.
338 mJ
100 V
12 A
.009 ohm
310 W
DMN3025LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; Minimum DS Breakdown Voltage: 30 V; No. of Elements: 1;
7.5 A
.018 ohm
S-PDSO-N5
5
SQUARE
NO LEAD
NTMFS4C13NT3G
NTMFS4C13NT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 106A and EAS of 22mJ, making it suitable for high-power operations. With a low 0.0091 ohm RDS(on), this MOSFET offers efficient performance in various electronic devices.
22 mJ
38 A
7.2 A
.0091 ohm
127 pF
21.6 W
106 A
NVB5404NT4G
NVB5404NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 670A IDM, 1000mJ EAS, and 0.0045 ohm RDS(on). Package: PLASTIC/EPOXY, GULL WING terminals, and operates up to 175°C. AEC-Q101 compliant for automotive use.
1000 mJ
167 A
.0045 ohm
254 W
670 A
NVB5860NLT4G
NVB5860NLT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 660A IDM, 735mJ EAS, and 0.0036 ohm RDS(ON). With a max power dissipation of 283W and operating temperature of 175 °C, it is suitable for high-power electronic systems.
735 mJ
220 A
.0036 ohm
283 W
660 A
NVB60N06T4G
NVB60N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS. It is used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE. Suitable for surface mount with GULL WING terminals, it has an EAS of 454mJ and AEC-Q101 standard compliance.
454 mJ
.014 ohm
NVD3055L170T4G
NVD3055L170T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 175 °C Max Operating Temp and 30mJ EAS.
30 mJ
.17 ohm
28.5 W
27 A
STB32NM50N
STB32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 190W max power dissipation. The transistor features a built-in diode, GULL WING terminals, and can withstand up to 150 °C operating temperature.
340 mJ
500 V
22 A
.13 ohm
88 A
STF25N80K5
STF25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, 78A IDM, and 0.26 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 40W Pd max. Suitable for high-power systems requiring efficient power management.
19.5 A
.26 ohm
40 W
78 A
STF32NM50N
STF32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. The transistor has a single configuration with built-in diode and comes in a PLASTIC/EPOXY package.
STP32NM50N
STP32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 88A IDM, 340mJ EAS, and 0.13 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 190W at 150 °C.
STP7N80K5
STP7N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM, 88mJ EAS, and 110W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150 °C, making it suitable for high-power electronic systems.
88 mJ
1.2 ohm
STW25N80K5
STW25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 78A Max Pulsed Drain Current, 200mJ Avalanche Energy Rating, and 0.26 ohm Max Drain-Source On Resistance. Suitable for high-power circuits requiring efficient switching capabilities.
250 W
STW32NM50N
STW32NM50N by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C temperature.
STW60NM50N
STW60NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 272A IDM, 551mJ EAS, and 0.043 ohm RDS(on). Operating in ENHANCEMENT MODE at up to 150 °C, it has a SILICON element and FLANGE MOUNT package style.
551 mJ
68 A
.043 ohm
272 A
STW78N65M5
STW78N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 276A pulsed drain current, 2000mJ avalanche energy rating, and 0.032ohm max on resistance. The transistor operates in enhancement mode with a max power dissipation of 450W at 150°C, making it suitable for high-power applications.
2000 mJ
69 A
.032 ohm
450 W
276 A
NDD01N60-1G
NDD01N60-1G by Onsemi is a N-channel Power FET with 600V DS breakdown voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance in a TO-252 package.
13 mJ
1.5 A
8.5 ohm
46 W
NDD01N60T4G
NDD01N60T4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 46W in enhancement mode operation. Suitable for use in various electronic devices due to its N-channel configuration and built-in diode.
NDD02N40-1G
NDD02N40-1G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in circuits where N-channel MOSFETs with built-in diode are needed.
400 V
1.7 A
39 W
6.9 A
NDD02N40T4G
NDD02N40T4G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for power applications requiring high drain current handling capabilities.
NDT01N60T1G
Onsemi's NDT01N60T1G is a Power FET with 600V DS Breakdown Voltage, 1.5A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 2.5W in enhancement mode operation at temperatures up to 150 °C.
.4 A
TO-261AA
R-PDSO-G4
4
2.5 W
STH270N8F7-2
STH270N8F7-2 by STMicroelectronics is a N-channel Power FET with 80V DS breakdown voltage, 180A max drain current, and 0.0021 ohm RDS(on). It is used for switching applications in enhancement mode with 720A pulsed drain current.
ULTRA LOW RESISTANCE
1160 mJ
80 V
.0021 ohm
315 W
NVD3055-150T4G
NVD3055-150T4G by Onsemi is a N-channel FET with 60V DS breakdown voltage, 27A pulsed drain current, and 30mJ avalanche energy rating. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 28.8W at 175 °C.
.15 ohm
40 pF
28.8 W
75 ns
105 ns
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