Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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RCX300N20
ROHM
ROHM's RCX300N20 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features 140A max pulsed drain current and 0.0427 ohm max drain-source resistance. The transistor operates in enhancement mode with a max power dissipation of 40W, making it suitable for high-power circuits.
396 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
200 V
30 A
70 A
.0427 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e1
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
N-CHANNEL
40 W
140 A
FET General Purpose Powers
NO
TIN SILVER COPPER
THROUGH-HOLE
SINGLE
10
SWITCHING
SILICON
RCX511N25
ROHM's RCX511N25 is a N-CHANNEL FET with 250V DS breakdown voltage and 51A max drain current. Ideal for switching applications, it features a built-in diode, 0.065 ohm max on resistance, and 204A pulsed drain current. Suitable for enhancement mode operation in various electronic devices.
197.9 mJ
250 V
51 A
.065 ohm
204 A
DMG4406LSS-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: HIGH RELIABILITY; Terminal Position: DUAL;
HIGH RELIABILITY
30 V
10.3 A
9.3 A
.011 ohm
R-PDSO-G8
e3
8
SMALL OUTLINE
2 W
90 A
YES
MATTE TIN
GULL WING
DUAL
30
ZDX080N50
ROHM ZDX080N50 is a N-CHANNEL FET with 500V DS breakdown voltage, 8A max drain current, and 0.85 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 24A pulsed drain current. Package style: flange mount, terminal form: through-hole.
500 V
8 A
.85 ohm
24 A
STL40N75LF3
STMicroelectronics
STL40N75LF3 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 160A IDM, and 0.022 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with DUAL terminals.
DRAIN
75 V
40 A
.022 ohm
R-PDSO-F5
5
NOT SPECIFIED
62 W
160 A
FLAT
STP9NM40N
STP9NM40N by STMicroelectronics is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22.4A IDM, 140mJ EAS, and 0.79 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W and can handle up to 150 °C temperature.
BULK: 2500
140 mJ
400 V
5.6 A
.79 ohm
2.3 pF
60 W
22.4 A
STY145N65M5
STY145N65M5 by STMicroelectronics is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 552A Max Pulsed Drain Current, 2420mJ Avalanche Energy Rating, and 0.015 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 625W at 150°C.
2420 mJ
650 V
138 A
.015 ohm
R-PSIP-T3
IN-LINE
625 W
552 A
FET General Purpose Power
Matte Tin (Sn)
IPD600N25N3GBTMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 210 mJ; Transistor Application: SWITCHING; Terminal Form: GULL WING;
210 mJ
25 A
.06 ohm
TO-252AA
R-PSSO-G2
2
100 A
DMG9N65CTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 13 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 9 A;
9 A
.0013 ohm
13 W
AEC-Q101
NTDV5804NT4G
Onsemi
NTDV5804NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 125A Max Pulsed Drain Current, and 0.0075 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and high current handling capabilities.
195 mJ
40 V
69 A
.0075 ohm
175 Cel
71 W
125 A
NVD4805NT4G
NVD4805NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 175A Max Pulsed Drain Current, and 0.0074 ohm Max RDS(on). Ideal for high-power switching circuits in automotive and industrial electronics due to its AEC-Q101 compliance.
288 mJ
95 A
12.7 A
.0074 ohm
79 W
175 A
TIN
IPW90R500C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE; No. of Elements: 1;
388 mJ
900 V
11 A
.5 ohm
TO-247AD
DMG4N65CTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.35 W; Minimum DS Breakdown Voltage: 650 V; Package Style (Meter): FLANGE MOUNT;
456 mJ
4 A
3 ohm
8.35 W
6 A
STDLED656
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
1.3 ohm
TO-252
30 W
STP28NM60ND
STP28NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 92A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications due to its 190W power dissipation and ENHANCEMENT MODE operation.
50 mJ
600 V
23 A
.15 ohm
190 W
92 A
STULED656
STULED656 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. It features 24A max pulsed drain current and 1.3ohm max drain-source resistance, operating in ENHANCEMENT MODE up to 150 °C. The PLASTIC/EPOXY package with IN-LINE style and DRAIN connection offers reliable performance in various power applications.
TO-251
STW28NM60ND
STW28NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 92A IDM, 50mJ EAS, and 0.15ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a RECTANGULAR package style with FLANGE MOUNT and DRAIN case connection.
TO-247
NDD60N360U1-1G
NDD60N360U1-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 44A IDM, and 64mJ EAS. Ideal for applications requiring high power dissipation in single-channel configurations with built-in diode, such as industrial motor drives or power supplies.
64 mJ
.36 ohm
114 W
44 A
NDD60N360U1T4G
NDD60N360U1T4G by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, 44A IDM, and 0.36 ohm RDS. Ideal for power applications, it operates in Enhancement Mode with 114W Power Dissipation and 150 °C Max Temp.
NDT02N40T1G
Onsemi's NDT02N40T1G is a Power FET with 400V DS Breakdown Voltage, 1.6A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for power management applications requiring high efficiency and low power dissipation.
120 mJ
.4 A
.0055 ohm
TO-261AA
R-PDSO-G4
4
1.6 A
NTBV75N06T4G
NTBV75N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications in automotive industry due to AEC-Q101 standard compliance and 175 °C max operating temp.
844 mJ
60 V
75 A
.0095 ohm
214 W
225 A
Matte Tin (Sn) - annealed
NVD3055-094T4G
NVD3055-094T4G by Onsemi is an N-channel Power FET with a 60V DS breakdown voltage and 45A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.094 ohm max drain-source resistance, and operates in enhancement mode.
61 mJ
12 A
.094 ohm
48 W
45 A
BUZ31H3046
Infineon BUZ31H3046 is a N-CHANNEL FET with 200V DS breakdown voltage and 58A IDM. Ideal for power applications, it features a built-in diode, 0.2 ohm RDS(on), and 200mJ EAS rating. Suitable for enhancement mode operation in various electronic systems.
AVALANCHE RATED
200 mJ
14.5 A
.2 ohm
TO-262AA
58 A
IPA50R190CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
339 mJ
.19 ohm
63 A
IPA50R650CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 102 mJ; Minimum DS Breakdown Voltage: 500 V; JEDEC-95 Code: TO-220AB;
102 mJ
6.1 A
.65 ohm
19 A
IPA50R800CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: TIN; Terminal Position: SINGLE;
83 mJ
.8 ohm
15.5 A
R6030ENX
ROHM R6030ENX is a N-CHANNEL FET with 600V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a built-in diode, 0.13 ohm on-resistance, and 80A pulsed drain current. Suitable for enhancement mode operation in isolated case connections.
636 mJ
.13 ohm
80 A
RS1E130GNTB
ROHM RS1E130GNTB is a N-CHANNEL FET with 30V DS Breakdown Voltage and 13A ID. Ideal for SWITCHING applications, it features a built-in diode, 0.0152 ohm RDS(on), and 52A IDM. Suitable for surface mount with small outline package style.
13 A
.0152 ohm
52 A
UPA2739T1A-E2-AY
Renesas Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Avalanche Energy Rating (EAS): 160 mJ; Package Style (Meter): SMALL OUTLINE;
160 mJ
85 A
.0028 ohm
R-PDSO-N8
P-CHANNEL
83 W
180 A
Other Transistors
NO LEAD
SPB07N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 230 mJ; Terminal Position: SINGLE; Additional Features: AVALANCHE RATED;
230 mJ
7.3 A
.6 ohm
TO-263AB
21.9 A
Not Qualified
SPB12N50C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY;
340 mJ
11.6 A
.38 ohm
34.8 A
SPB16N50C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-30 Code: R-PSSO-G2; Terminal Form: GULL WING;
460 mJ
16 A
.28 ohm
48 A
SPB04N50C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 13.5 A; Moisture Sensitivity Level (MSL): 1;
130 mJ
4.5 A
.95 ohm
13.5 A
SPB11N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 11 A; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
22 A
SPB07N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified;
14.6 A
SPB20N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 40 A; Terminal Form: GULL WING; No. of Elements: 1;
690 mJ
20 A
SPB03N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.4 ohm; Maximum Pulsed Drain Current (IDM): 9.6 A; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED, HIGH VOLTAGE
100 mJ
3.2 A
1.4 ohm
9.6 A
SPB02N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Form: GULL WING; Transistor Application: SWITCHING;
1.8 A
5.4 A
SPB04N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; JEDEC-95 Code: TO-263AB;
SPB03N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 600 V;
5.7 A
SPB04N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-263AB; Terminal Finish: TIN;
SPB02N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: AVALANCHE RATED; Maximum Pulsed Drain Current (IDM): 3.2 A;
IPB60R520CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 17 A;
166 mJ
6.8 A
.52 ohm
17 A
IPB60R600CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 15 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e3;
144 mJ
15 A
SPP15N65C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified; No. of Elements: 1;
SPA15N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 45 A; Maximum Drain Current (ID): 15 A;
SPU03N60S5BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: 1.4 ohm; Terminal Finish: TIN; Maximum Pulsed Drain Current (IDM): 5.7 A;
TO-251AA
SPD02N50C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 50 mJ; Package Body Material: PLASTIC/EPOXY; Additional Features: AVALANCHE RATED;
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