Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
STB45NF06T4
STMicroelectronics
STB45NF06T4 by STMicroelectronics is a N-CHANNEL FET with 60V DS breakdown voltage, 38A max drain current, and 0.028 ohm RDS(on). Ideal for switching applications, it features a built-in diode, 152A pulsed drain current, and 80W power dissipation in a small outline package.
135 mJ
SINGLE WITH BUILT-IN DIODE
60 V
38 A
.028 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
245
N-CHANNEL
80 W
152 A
Not Qualified
FET General Purpose Power
YES
Matte Tin (Sn) - annealed
GULL WING
SINGLE
30
SWITCHING
SILICON
STB5NK50ZT4
STB5NK50ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 17.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
130 mJ
500 V
4.4 A
1.5 ohm
150 Cel
70 W
17.6 A
NTP13N10G
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 54 W; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 13 A;
85 mJ
DRAIN
100 V
13 A
.165 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
260
54 W
39 A
NO
TIN
THROUGH-HOLE
MTB30P06VT4G
MTB30P06VT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 105A IDM, 450mJ EAS, and 0.08 ohm RDS(on). With a max power dissipation of 125W and operating temperature of 175 °C, it offers reliable performance in various electronic systems.
AVALANCHE RATED
450 mJ
30 A
.08 ohm
P-CHANNEL
125 W
105 A
Other Transistors
MTD5P06VT4G
MTD5P06VT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 125mJ EAS, and 0.45 ohm RDS(ON). With a max power dissipation of 40W and operating temp of 175°C, it's suitable for various high-power electronic designs.
125 mJ
5 A
.45 ohm
40 W
18 A
40
MTD6N15T4G
MTD6N15T4G by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage, 20A IDM, and 0.3 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 6A ID. The PLASTIC/EPOXY package features GULL WING terminals and can handle up to 20W power dissipation.
150 V
6 A
.3 ohm
-65 Cel
20 W
20 A
MTP2P50EG
MTP2P50EG by Onsemi is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 6A and EAS of 80mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and SILICON element material, it offers reliable performance up to 150°C.
HIGH VOLTAGE
80 mJ
2 A
6 ohm
75 W
MTP50P03HDLG
MTP50P03HDLG by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage, 150A IDM, and 0.025 ohm RDS(on). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150 °C.
1250 mJ
30 V
50 A
.025 ohm
150 A
MTP52N06VLG
MTP52N06VLG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 182A and EAS of 406mJ, making it suitable for high-power tasks. With a Drain Current of 52A and 0.025 ohm RDS(on), this transistor operates in ENHANCEMENT MODE efficiently up to 175 °C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
406 mJ
52 A
165 W
182 A
FET General Purpose Powers
NID9N05CLT4G
NID9N05CLT4G by Onsemi is a N-CHANNEL FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(ON). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
ESD PROTECTED
160 mJ
52 V
9 A
.181 ohm
28.8 W
35 A
NTB30N20T4G
NTB30N20T4G by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage, 30A Max ID, and 0.081 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 214W at 175 °C.
200 V
.081 ohm
214 W
90 A
NTB52N10T4G
NTB52N10T4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 52A ID, and 0.03 ohm RDS(ON). Ideal for SWITCHING applications, it features a built-in DIODE and can handle up to 156A IDM. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 178W.
800 mJ
.03 ohm
178 W
156 A
NTB75N03L09G
NTB75N03L09G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS. Ideal for SWITCHING applications, it features a built-in diode and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 150W at 150 °C.
1500 mJ
75 A
.008 ohm
150 W
225 A
NTD12N10T4G
NTD12N10T4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 100V DS Breakdown Voltage, 36A Max Pulsed Drain Current, and 0.165 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
75 mJ
12 A
NOT SPECIFIED
56.6 W
36 A
Tin (Sn)
NTD14N03RG
NTD14N03RG by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max drain current of 11.4A, min DS breakdown voltage of 25V, and max pulsed drain current of 28A. This MOSFET operates in enhancement mode with a max power dissipation of 20.8W and can withstand temperatures up to 150 °C.
25 V
11.4 A
.13 ohm
20.8 W
28 A
NTD18N06LG
NTD18N06LG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration with a built-in diode. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 1.5W and can withstand temperatures up to 175 °C.
LOGIC LEVEL COMPATIBLE
72 mJ
.065 ohm
1.5 W
54 A
NTD18N06L-1G
NTD18N06L-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 175 °C Max Temp. With a built-in diode, this N-CHANNEL transistor has a rectangular package shape and through-hole terminals.
R-PSIP-T3
IN-LINE
NTD20N03L27G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.75 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 20 A;
288 mJ
.031 ohm
1.75 W
60 A
NTD20N03L27-1G
NTD20N03L27-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Features include built-in diode, 288mJ EAS rating, and SILICON element material.
NTD20N06G
NTD20N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Max ID, and 0.046 ohm Max RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W and can handle up to 60A IDM.
170 mJ
.046 ohm
60 W
NTD23N03RT4G
NTD23N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 3.8A, Max Pulsed Drain Current of 40A, and Min DS Breakdown Voltage of 25V. This transistor operates in ENHANCEMENT MODE and has a max power dissipation of 22.3W, making it ideal for high-power switching circuits.
3.8 A
.06 ohm
22.3 W
40 A
NTD3055L104G
NTD3055L104G by Onsemi is an N-channel power FET with a 60V DS breakdown voltage and 45A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.104 ohm max RDS(on), and operates in enhancement mode. Suitable for surface mount designs with a small outline package style.
61 mJ
.104 ohm
-55 Cel
48 W
45 A
NTD3055L104-1G
NTD3055L104-1G by Onsemi is a power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 45A.
MATTE TIN
NTD3055L170G
NTD3055L170G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 1.5W and can withstand temperatures up to 175 °C.
30 mJ
.17 ohm
27 A
NTD3055L170-1G
NTD3055L170-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a RECTANGULAR package with 3 terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1.5W at 175 °C.
NTD3055L170T4G
NTD3055L170T4G by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 60V, max pulsed drain current of 27A, and max operating temperature of 175°C. This MOSFET has a package style of small outline and terminal finish in matte tin, suitable for high-power circuit designs.
NTD80N02G
NTD80N02G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 80A, Min DS Breakdown Voltage of 24V, and Max Pulsed Drain Current of 200A. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 75W.
733 mJ
24 V
80 A
.0058 ohm
200 A
NTP60N06G
NTP60N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its 150W Pdiss, 454mJ EAS rating, and -55 °C to +175°C operating temp range.
454 mJ
.014 ohm
180 A
NTP75N03L09G
NTP75N03L09G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
NTP75N06G
NTP75N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and EAS of 844 mJ.
844 mJ
.0095 ohm
2.4 W
IRFR13N20DTRRP
International Rectifier
IRFR13N20DTRRP by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a 0.235 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE at up to 150°C.
.235 ohm
TO-252AA
Matte Tin (Sn) - with Nickel (Ni) barrier
STP16NK60Z
STP16NK60Z from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain-source voltage of 620V, supports up to 14A continuous current, and dissipates up to 190W. Ideal for high-efficiency power management in various electronic devices.
360 mJ
620 V
14 A
.42 ohm
190 W
56 A
STW16NK60Z
STW16NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 620V breakdown voltage, 14A max drain current, and 190W power dissipation. Ideal for high-efficiency power management in various electronic devices.
TO-247
Matte Tin (Sn)
SUD50P04-13L-E3
Vishay Intertechnology
Vishay Intertechnology's SUD50P04-13L-E3 is a P-channel FET with 40V DS breakdown voltage, 100A IDM, and 0.013 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 93.7W.
40 V
.013 ohm
TO-252
93.7 W
100 A
NTP52N10G
NTP52N10G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 156A IDM, 800mJ EAS, and 0.03 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and 175 °C max operating temp.
NTD32N06-1G
NTD32N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high performance with 90A Pulsed Drain Current capability.
313 mJ
32 A
.026 ohm
93.75 W
NTD32N06G
NTD32N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm RDS(ON). Ideal for switching applications, it features an Enhancement Mode in a small outline package with Gull Wing terminals. Operating at up to 175 °C, it has a max power dissipation of 93.75W.
NTD32N06T4G
NTD32N06T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm RDS(ON). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 93.75W at 175 °C.
STP40NF12
STP40NF12 by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a max drain current of 40 A, breakdown voltage of 120 V, and power dissipation up to 150 W. Ideal for high-efficiency power management in various electronic devices.
150 mJ
120 V
.032 ohm
160 A
STQ3NK50ZR-AP
STQ3NK50ZR-AP by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 2A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
120 mJ
.5 A
3.3 ohm
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
3 W
BOTTOM
STS12NH3LL
STS12NH3LL by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 12 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
LOW THRESHOLD
R-PDSO-G8
e4
8
2.5 W
48 A
NICKEL PALLADIUM GOLD
DUAL
NTB45N06LG
NTB45N06LG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 150A Pulsed Drain Current, and 0.028 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
240 mJ
NTB45N06LT4G
NTB45N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.028 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 2.4W and can handle up to 150A pulsed drain current.
NTB30N06LG
NTB30N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 30A Drain Current, 0.046 ohm On Resistance, and 88.2W Power Dissipation in a SMALL OUTLINE package. Operating at up to 175 °C, it offers high performance in various electronic devices.
101 mJ
88.2 W
NTB30N06LT4G
NTB30N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 30A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 90A Pulsed Drain Current, and 0.046 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
NTB60N06G
NTB60N06G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 180A and EAS of 454mJ, operating in ENHANCEMENT MODE. With a Drain Current of 60A and 0.014 ohm RDS(on), this MOSFET is suitable for high-power circuit designs.
NTB75N06G
NTB75N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
NTB75N06T4G
NTB75N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 2.4W Pdiss and 175 °C Tmax.
© 2023 All rights reserved
