Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STP9NK60ZD
STMicroelectronics
STP9NK60ZD by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 28A max pulsed drain current and 235mJ avalanche energy rating. The transistor operates in enhancement mode with 0.95 ohm max on-resistance, suitable for high-power applications up to 104W at 150°C.
235 mJ
SINGLE WITH BUILT-IN DIODE
600 V
7 A
.95 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
104 W
28 A
Not Qualified
FET General Purpose Power
NO
Matte Tin (Sn)
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STV160NF02LT4
STV160NF02LT4 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 160 A, low on-resistance of 0.0035 Ω, and built-in diode for enhanced performance. Ideal for high-efficiency power management in compact designs.
AVALANCHE RATED
1500 mJ
20 V
160 A
.0035 ohm
R-PDSO-G10
10
SMALL OUTLINE
250
640 A
YES
MATTE TIN
GULL WING
DUAL
30
STV160NF03LT4
STV160NF03LT4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, a breakdown voltage of 30 V, and low on-resistance of 0.0038 Ω. Ideal for power management in compact designs, it comes in a small outline package with gull-wing terminals.
1000 mJ
DRAIN
30 V
.0038 ohm
IRFR5505GTRPBF
International Rectifier
IRFR5505GTRPBF by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 64A and EAS of 150mJ, operating in ENHANCEMENT MODE. With a 0.11 ohm RDS(on), it can handle up to 18A drain current and dissipate 57W power at max temp of 175°C.
150 mJ
55 V
18 A
.11 ohm
TO-252AA
R-PSSO-G2
2
175 Cel
P-CHANNEL
57 W
64 A
Other Transistors
MATTE TIN OVER NICKEL
DMN3031LSS-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Transistor Application: SWITCHING;
HIGH RELIABILITY
9 A
.0185 ohm
R-PDSO-G8
8
260
2.5 W
40 A
DMN3050S-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
5.2 A
.035 ohm
R-PDSO-G3
20 A
DMS2120LFWB-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; No. of Elements: 1; JESD-609 Code: e4;
2.9 A
.095 ohm
R-PDSO-N8
e4
1.5 W
10 A
NICKEL PALLADIUM GOLD
NO LEAD
RZQ050P01TR
ROHM
ROHM RZQ050P01TR is a P-CHANNEL FET with 12V DS Breakdown Voltage, 5A Max ID, and 0.026 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it has 20A IDM and operates up to 150°C. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package.
12 V
5 A
.026 ohm
R-PDSO-G6
e1
6
1.25 W
TIN SILVER COPPER
STF42N65M5
STF42N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 132A IDM, and 0.079 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with ISOLATED case connection.
950 mJ
ISOLATED
650 V
33 A
.079 ohm
40 W
132 A
STF7N95K3
STF7N95K3 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, 28.8A IDM, and 220mJ EAS. Ideal for SWITCHING applications due to its 35W Max Power Dissipation and ENHANCEMENT MODE operation at up to 150°C.
220 mJ
950 V
7.2 A
1.35 ohm
35 W
28.8 A
STI42N65M5
STI42N65M5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 33A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-262AA
R-PSIP-T3
IN-LINE
190 W
STS30N3LLH6
STS30N3LLH6 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs, it comes in an 8-terminal surface mount package.
525 mJ
30 A
2.7 W
120 A
Nickel/Palladium/Gold (Ni/Pd/Au)
STW70N10F4
STW70N10F4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 65 A and a breakdown voltage of 100 V. It offers low on-resistance at 0.0195 Ω and operates up to 175 °C. Its robust design ensures reliable performance in demanding environments.
120 mJ
100 V
65 A
.0195 ohm
TO-247
150 W
260 A
STP185N10F3
STP185N10F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 100 V, and power dissipation up to 300 W. Ideal for high-efficiency power management in various electronic devices.
.0048 ohm
300 W
480 A
STB5NK50Z-1
STB5NK50Z-1 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 17.6A max pulsed drain current. It operates in enhancement mode with a power dissipation of up to 70W. This versatile transistor is suitable for various electronic circuits.
130 mJ
500 V
4.4 A
1.5 ohm
70 W
17.6 A
STB75NH02LT4
STB75NH02LT4 from STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance of just 0.014 Ω.
360 mJ
24 V
75 A
60 A
.014 ohm
TO-263AB
85 W
240 A
STD100NH03LT4
STD100NH03LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
700 mJ
.0105 ohm
100 W
STS5PF20V
STS5PF20V from STMicroelectronics is a P-channel FET designed for efficient switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
.1 ohm
STP20NM60A
STP20NM60A by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. This versatile component is suitable for high-efficiency power management solutions.
.29 ohm
192 W
80 A
STP80NF06
STP80NF06 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
LOW THRESHOLD
870 mJ
60 V
.008 ohm
320 A
STW80NF06
STW80NF06 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
TO-247AA
245
NOT SPECIFIED
BSC022N03S
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; No. of Terminals: 8; Transistor Element Material: SILICON;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
800 mJ
.0033 ohm
e0
235
200 A
TIN LEAD
STE30NK90Z
STE30NK90Z by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 900V breakdown voltage and 30A max drain current. It offers a low on-resistance of 0.26Ω and operates up to 150 °C. This robust FET is suitable for high-power circuits.
HIGH VOLTAGE
500 mJ
900 V
.26 ohm
R-PUFM-X4
4
600 W
112 A
NICKEL
UNSPECIFIED
UPPER
STE45NK80ZD
STE45NK80ZD from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features an 800V breakdown voltage, 180A pulsed drain current, and a max power dissipation of 600W. Ideal for high-performance power management in various electronic devices.
1200 mJ
800 V
45 A
.13 ohm
180 A
STY30NK90Z
STY30NK90Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 900V breakdown voltage and 26A max drain current. It offers a built-in diode and operates in enhancement mode with a power dissipation of 450W. This robust transistor is suitable for high-temperature environments up to 150 °C.
26 A
450 W
104 A
NTLUS4195PZTBG
Onsemi
NTLUS4195PZTBG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 17A IDM. Ideal for SWITCHING applications, it features 0.09 ohm RDS(ON) and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has SILICON element material and TIN terminal finish.
2 A
.09 ohm
S-PDSO-N3
SQUARE
17 A
TIN
NTTFS4821NTAG
NTTFS4821NTAG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 171A Pulsed Drain Current, and 0.0108 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 38.5W, making it ideal for high-power switching circuits.
55 mJ
57 A
13.5 A
.0108 ohm
S-PDSO-N5
5
38.5 W
171 A
NTTFS4821NTWG
NTTFS4821NTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 171A IDM, and 0.0108 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications in a SQUARE package with 5 terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 38.5W and can handle up to 150 °C temperature.
Tin (Sn)
BSC032N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Avalanche Energy Rating (EAS): 550 mJ; Terminal Finish: TIN LEAD;
550 mJ
23 A
.0049 ohm
78 W
STE40NK90ZD
STE40NK90ZD from STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 900V breakdown voltage and 40A max drain current. It offers high efficiency with a low on-resistance of 0.18Ω and can handle up to 600W power dissipation. Ideal for robust power management in various electronic devices.
.18 ohm
STW30NM60D
STW30NM60D by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 30A max drain current, and 280W power dissipation. Ideal for high-efficiency power management in various electronic devices.
740 mJ
.145 ohm
TO-247AC
280 W
FQP90N10V2
Fairchild Semiconductor
FQP90N10V2 by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 360A IDM and 0.01 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 175°C.
2430 mJ
90 A
.01 ohm
250 W
360 A
STP6NK50Z
STP6NK50Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and a max drain current of 5.6A. It operates in enhancement mode with a power dissipation of up to 90W. This versatile transistor is suitable for high-temperature environments, reaching up to 150 °C.
180 mJ
5.6 A
1.2 ohm
90 W
22.4 A
STW18NK60Z
STW18NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 16A max drain current, and 230W power dissipation. Ideal for high-efficiency power management in various electronic devices.
400 mJ
16 A
.36 ohm
230 W
STW29NK50ZD
STW29NK50ZD by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 29A max drain current, and 378W power dissipation. Ideal for high-efficiency power management in various electronic devices.
29 A
378 W
116 A
STP62NS04Z
STP62NS04Z by STMicroelectronics is a N-CHANNEL FET with 33V DS Breakdown Voltage, ideal for SWITCHING applications. It features 248A IDM, 500mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 110W and operating temperature of 175°C, it offers reliable performance in various electronic systems.
33 V
62 A
.015 ohm
110 W
248 A
SI7434DP-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI7434DP-T1-E3 is an N-CHANNEL FET for SWITCHING applications. Features include 250V DS Breakdown Voltage, 40A IDM, and 0.155 ohm RDS(on). With a small outline package style and operating temperature up to 150°C, it is ideal for high-power switching circuits.
8.4 mJ
250 V
2.3 A
.155 ohm
R-PDSO-C8
5.2 W
C BEND
STS9NH3LL
STS9NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
100 mJ
.025 ohm
36 A
NTD40N03R-1G
NTD40N03R-1G by Onsemi is a power FET with a min DS breakdown voltage of 25V and max drain current of 32A. It is commonly used for switching applications due to its single configuration with built-in diode.
25 V
32 A
.023 ohm
41.7 W
100 A
NTD40N03RG
NTD40N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 32A, Max Pulsed Drain Current of 100A, and Min DS Breakdown Voltage of 25V. With a package style of SMALL OUTLINE and operating temperature up to 150 °C, it is ideal for high-power switching circuits.
NTD40N03RT4G
NTD40N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 32A, Max Pulsed Drain Current of 100A, and Min DS Breakdown Voltage of 25V. With a Package Style of SMALL OUTLINE and Surface Mount capability, it operates in ENHANCEMENT MODE at up to 175 °C.
NTD70N03R-1G
NTD70N03R-1G by Onsemi is a Power FET with N-CHANNEL configuration, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 25V, Max Pulsed Drain Current of 140A, and Max Operating Temperature of 150 °C. The transistor has a Max Drain Current of 32A and Max Drain-Source On Resistance of 0.013 ohm.
71.7 mJ
62.8 A
.013 ohm
1.56 W
140 A
NTD70N03RT4G
NTD70N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 140A, Max Operating Temperature of 175°C, and Max Drain Current of 32A. With a low on-resistance of 0.013 ohm, this transistor is ideal for high-power switching circuits in various electronic devices.
NTD80N02T4G
NTD80N02T4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 200A Max Pulsed Drain Current, and 0.0058 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 75W.
733 mJ
.0058 ohm
75 W
STB200NF04-1
STB200NF04-1 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 40 V, and power dissipation up to 310 W. Ideal for high-efficiency circuits in demanding environments.
1300 mJ
40 V
.0037 ohm
310 W
STB200NF04T4
STB200NF04T4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and robust thermal performance.
Matte Tin (Sn) - annealed
STD55NH2LLT4
STD55NH2LLT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 55 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
600 mJ
55 A
.0135 ohm
60 W
STP200NF04
STP200NF04 from STMicroelectronics is a powerful N-channel FET ideal for switching applications. It features a max drain current of 120 A, breakdown voltage of 40 V, and power dissipation up to 310 W. Its robust design ensures reliability in demanding environments.
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