Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STB4NK60Z-1
STMicroelectronics
STB4NK60Z-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 16A IDM, and 2 ohm RDS(on). It is used for switching applications in enhancement mode with a max power dissipation of 70W.
120 mJ
SINGLE WITH BUILT-IN DIODE
600 V
4 A
2 ohm
METAL-OXIDE SEMICONDUCTOR
TO-262AA
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
70 W
16 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
NTD60N02RT4
Onsemi
NTD60N02RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 48W at 150 °C.
60 mJ
DRAIN
25 V
32 A
.0105 ohm
R-PSSO-G2
e0
2
SMALL OUTLINE
235
48 W
YES
TIN LEAD
GULL WING
NTD60N02R
NTD60N02R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm On Resistance. This ENHANCEMENT MODE transistor has a 48W Power Dissipation rating and operates up to 150 °C, making it ideal for high-power electronic circuits.
IPB03N03LA
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 960 mJ; No. of Terminals: 2;
LOGIC LEVEL COMPATIBLE
960 mJ
80 A
.0041 ohm
TO-263AB
175 Cel
220
150 W
385 A
IPB04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
290 mJ
.0064 ohm
107 W
IPB09N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 50 A;
75 mJ
50 A
.0151 ohm
63 W
350 A
IPI04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 385 A;
.0067 ohm
IPP03N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Terminals: 3; Transistor Element Material: SILICON;
.0044 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
IPP04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
SPB80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Terminal Form: GULL WING; Maximum Drain Current (ID): 80 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
700 mJ
100 V
.024 ohm
250 W
320 A
SPI80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 3; Maximum Operating Temperature: 175 Cel;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
SPP80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
SPU30N03S2L-10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 82 W; Maximum Operating Temperature: 175 Cel; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
150 mJ
30 V
30 A
.0146 ohm
TO-251
82 W
120 A
STB6NK60Z-1
STB6NK60Z-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 24A IDM, and 1.2 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 104W.
210 mJ
6 A
1.2 ohm
104 W
24 A
Matte Tin (Sn)
STE70NM60
STE70NM60 by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 280A Max Pulsed Drain Current and 0.055ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
1400 mJ
ISOLATED
70 A
.055 ohm
R-PUFM-X4
4
NOT SPECIFIED
600 W
280 A
UNSPECIFIED
UPPER
NTHS2101PT1
NTHS2101PT1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 8V DS Breakdown Voltage, 5.4A Drain Current, and 0.025 ohm On Resistance. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 1.3W in a SMALL OUTLINE package style.
8 V
5.4 A
.025 ohm
R-XDSO-C8
8
P-CHANNEL
1.3 W
7.5 A
Other Transistors
C BEND
DUAL
NTMSD6N303R2
NTMSD6N303R2 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 6A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 30A Pulsed Drain Current, and 0.032 ohm On Resistance. Suitable for surface mount with GULL WING terminals, it operates in ENHANCEMENT MODE up to 150 °C.
325 mJ
.032 ohm
R-PDSO-G8
2 W
NTD25P03L1
NTD25P03L1 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM, 200mJ EAS, and 0.08 ohm RDS(ON). With a max power dissipation of 75W and operating temperature up to 150 °C, it's suitable for various ENHANCEMENT MODE switching tasks.
200 mJ
25 A
.08 ohm
75 W
75 A
NTD25P03LT4
NTD25P03LT4 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 75A IDM, and 0.08 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C.
NTY100N10
NTY100N10 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 369A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications due to its 313W Pdiss, EAS of 500mJ, and ENHANCEMENT MODE operation. Package style is IN-LINE with TIN LEAD finish for THROUGH-HOLE mounting.
500 mJ
123 A
.01 ohm
TO-264AA
313 W
369 A
STB3NK60ZT4
STB3NK60ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 2.4A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
2.4 A
3.6 ohm
245
45 W
9.6 A
Matte Tin (Sn) - annealed
30
NTB125N02RT4
NTB125N02RT4 by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 250A, EAS of 120mJ, and ID of 15.9A. With 0.0062 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power requirements.
15.9 A
95 A
.0062 ohm
113.6 W
250 A
NTB125N02R
NTB125N02R by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage, 250A IDM, and 0.0062 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 113.6W and operates at up to 150 °C temperature.
NTD23N03R
NTD23N03R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 40A Max IDM, and 0.06 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 22.3W, making it ideal for high-power switching circuits.
3.8 A
.06 ohm
22.3 W
40 A
NTD85N02RT4
NTD85N02RT4 by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max drain current of 85A, min DS breakdown voltage of 24V, and max pulsed drain current of 192A. This MOSFET operates in enhancement mode with a max operating temperature of 150 °C, making it suitable for high-power applications.
85 mJ
24 V
12 A
85 A
.0052 ohm
78.1 W
192 A
NTD85N02R
NTD85N02R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 192A IDM, and 0.0052 ohm Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 78.1W, making it ideal for high-power switching circuits.
NTMS4101PR2
NTMS4101PR2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 30A and ID of 6.9A, with 0.019 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for various power management needs.
20 V
6.9 A
.019 ohm
1.38 W
NTB23N03R
NTB23N03R by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 6A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.06 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor has GULL WING terminals, can handle up to 60A Pulsed Drain Current, and withstands temperatures up to 150 °C.
60 A
NTB75N03RT4
NTB75N03RT4 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 225A IDM, and 0.013 ohm RDS(on). Ideal for SWITCHING applications due to its 74.4W power dissipation and ENHANCEMENT MODE operation. Features GULL WING terminals in a RECTANGULAR package style.
71.7 mJ
9.7 A
.013 ohm
74.4 W
225 A
NTD110N02RT4
NTD110N02RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). With a max power dissipation of 92.5W and operating temperature up to 150 °C, it is ideal for high-power electronic systems.
12.5 A
92.5 W
110 A
NTD110N02R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e0;
NTD14N03R
NTD14N03R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 11.4A, Max Pulsed Drain Current of 28A, and Min DS Breakdown Voltage of 25V. This MOSFET operates in ENHANCEMENT MODE and has a Max Operating Temperature of 150 °C.
11.4 A
.13 ohm
20.8 W
28 A
NTD40N03RT4
NTD40N03RT4 by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max drain current of 32A, min DS breakdown voltage of 25V, and max pulsed drain current of 100A. This MOSFET operates in enhancement mode with a package style of small outline, making it suitable for high-power applications requiring efficient switching capabilities.
.023 ohm
41.7 W
100 A
FQA9N90C
Fairchild Semiconductor
FQA9N90C by Fairchild Semiconductor is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A Max Pulsed Drain Current and 1.4ohm Max RDS(ON), operating in ENHANCEMENT MODE at up to 150°C.
900 mJ
900 V
9 A
1.4 ohm
280 W
36 A
NTD14N03RT4
NTD14N03RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 11.4A Drain Current, and 0.13 ohm On Resistance. With a max power dissipation of 20.8W and operating temperature up to 150 °C, it is ideal for high-performance electronic devices requiring efficient power management in compact designs.
STD50NH02L-1
STD50NH02L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 50 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
LOW THRESHOLD
280 mJ
260
60 W
200 A
STB60NH02LT4
STB60NH02LT4 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
240 A
CSD17556Q5BT
Texas Instruments
CSD17556Q5BT by Texas Instruments is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 214A IDM. Ideal for SWITCHING applications, it features 0.0018 ohm Max RDS(on) and operates b/w -55 to 150 °C.
AVALANCHE RATED
34 A
.0018 ohm
88 pF
R-PDSO-N8
-55 Cel
214 A
NO LEAD
CSD17559Q5T
CSD17559Q5T by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 400A IDM, and 0.0015 ohm Drain-Source Resistance. Ideal for high-power switching circuits with operating temperatures ranging from -55 to 150°C.
541 mJ
.0015 ohm
113 pF
400 A
FQP13N50C
FQP13N50C by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 195W, this transistor has a 0.48 ohm Drain-Source On Resistance and can handle up to 13A Drain Current.
860 mJ
500 V
13 A
.48 ohm
195 W
52 A
NTB25P06
The Onsemi NTB25P06 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 600mJ EAS, and 0.082 ohm RDS(on). The PLASTIC/EPOXY package with GULL WING terminals operates at up to 150 °C, making it suitable for high-power circuits.
600 mJ
60 V
27.5 A
.082 ohm
100 W
STW220NF75
STW220NF75 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and can handle up to 500 W power dissipation. Ideal for high-efficiency power management in various electronic devices.
2500 mJ
75 V
TO-247
500 W
480 A
STB100NH02LT4
STB100NH02LT4 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact designs.
.006 ohm
STP45NF3LL
STP45NF3LL by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 45 A and a breakdown voltage of 30 V. It operates in enhancement mode with low on-resistance of 0.02 Ω. Designed for high efficiency, it supports up to 180 A pulsed current.
241 mJ
45 A
.02 ohm
180 A
STB32N65M5
STB32N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 96A IDM, and 0.119 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 150W.
AVALANCHE ENERGY RATED
650 mJ
650 V
.119 ohm
96 A
STB6NM60N
STB6NM60N from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for compact designs with its surface mount configuration.
65 mJ
4.6 A
.92 ohm
18.4 A
STD95N3LLH6
STD95N3LLH6 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
.007 ohm
TO-252
STE140NF20D
STE140NF20D by STMicroelectronics is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 140A ID. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.012 ohm Drain-Source On Resistance, and 560A Max Pulsed Drain Current.
800 mJ
200 V
140 A
.012 ohm
560 A
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