Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SPP80N06S2L-H5
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
AVALANCHE RATED
700 mJ
SINGLE WITH BUILT-IN DIODE
55 V
80 A
.0065 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
300 W
320 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SILICON
STD12NF06-1
STMicroelectronics
STD12NF06-1 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 12 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
140 mJ
DRAIN
60 V
12 A
.1 ohm
TO-251AA
R-PSIP-T3
IN-LINE
30 W
48 A
SWITCHING
STB100NF03L-03-1
STB100NF03L-03-1 by STMicroelectronics is a N-channel Power FET with 30V DS breakdown voltage, 400A IDM, and 0.0045 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a rectangular package suitable for enhancement mode operation.
LOGIC LEVEL COMPATIBLE
1900 mJ
30 V
100 A
.0045 ohm
TO-262AA
400 A
STW45NM60
STW45NM60 by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has 180A IDM and 850mJ EAS, suitable for SWITCHING applications. The transistor operates in ENHANCEMENT MODE, with 0.11 ohm RDS(on) and can handle up to 417W power dissipation.
850 mJ
600 V
45 A
.11 ohm
TO-247AC
150 Cel
417 W
180 A
Matte Tin (Sn)
STB22NS25ZT4
STB22NS25ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 22 A, breakdown voltage of 250 V, and power dissipation up to 135 W. Ideal for high-performance power management in compact designs.
350 mJ
250 V
22 A
.15 ohm
R-PSSO-G2
2
SMALL OUTLINE
245
135 W
88 A
YES
Matte Tin (Sn) - annealed
GULL WING
30
STP22NS25Z
STP22NS25Z by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a max drain current of 22 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for high-power circuits with efficient thermal management.
IXFK24N100F
IXYS Corporation
IXYS Corporation's IXFK24N100F is a N-CHANNEL FET with 1000V DS Breakdown Voltage, 96A IDM, and 0.0039 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 3000 mJ EAS rating. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
3000 mJ
1000 V
24 A
.0039 ohm
TO-264AA
NOT SPECIFIED
96 A
STB40NS15T4
STB40NS15T4 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 40 A, breakdown voltage of 150 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
150 V
40 A
.052 ohm
160 A
NTB30N20
Onsemi
The Onsemi NTB30N20 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 90A and EAS of 450mJ, making it suitable for high-power operations. With a low 0.081 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C, offering reliable performance in various power electronics designs.
450 mJ
200 V
30 A
.081 ohm
e0
235
214 W
90 A
TIN LEAD
NTMS7N03R2
NTMS7N03R2 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.023 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount designs with GULL WING terminals, this transistor has an EAS of 288 mJ and can handle up to 4.8A ID.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
288 mJ
4.38 A
4.8 A
.023 ohm
R-PDSO-G8
8
.8 W
14 A
DUAL
STB10NK60Z-1
STB10NK60Z-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 115W power dissipation. Its compact design ensures efficient performance in various electronic circuits.
300 mJ
10 A
.75 ohm
115 W
36 A
STB14NK50Z-1
STB14NK50Z-1 from STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 500V breakdown voltage, 14A max drain current, and 135W power dissipation. Ideal for high-efficiency power management in various electronic devices.
400 mJ
500 V
.38 ohm
STW13NK60Z
STW13NK60Z by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 52A IDM and 0.55 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 160W and operates at up to 150°C.
13 A
.55 ohm
TO-247
160 W
52 A
STW14NK50Z
STW14NK50Z by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 48A IDM, 400mJ EAS, and 0.38 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 160W at 150°C.
STP100NF04
STP100NF04 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 120 A and a breakdown voltage of 40 V. It operates in enhancement mode with low on-resistance of 0.0046 Ω. This robust transistor supports high power dissipation up to 300 W.
1200 mJ
40 V
120 A
.0046 ohm
480 A
STP8NM60FP
STP8NM60FP from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 32A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
200 mJ
ISOLATED
8 A
1 ohm
32 A
NTB85N03T4
NTB85N03T4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 85A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 45A IDM, and 0.0068 ohm RDS(on). Operating in ENHANCEMENT MODE, it has an EAS of 61mJ and can handle up to 80W power dissipation.
61 mJ
85 A
15 A
.0068 ohm
80 W
NTB85N03
NTB85N03 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 61mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 80W and 0.0068 ohm RDS(on), it offers high performance in a small outline package.
NTD15N06LT4
NTD15N06LT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A IDM, and 0.1 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 1.5W.
1.5 W
NTP4302
NTP4302 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 175A IDM, and 0.0093 ohm RDS. Ideal for SWITCHING applications due to its 80W Pdiss, ENHANCEMENT MODE operation, and built-in DIODE. Package: PLASTIC/EPOXY RECTANGULAR with THROUGH-HOLE terminals.
722 mJ
74 A
.0093 ohm
175 A
STE53NC50
STE53NC50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 212A Max Pulsed Drain Current and 1043mJ Avalanche Energy Rating, operating in ENHANCEMENT MODE. With a max power dissipation of 460W and 0.08ohm Drain-Source On Resistance, it offers high performance in various industrial settings.
1043 mJ
53 A
.08 ohm
R-PUFM-X4
4
460 W
212 A
UNSPECIFIED
UPPER
STD35NF3LLT4
STD35NF3LLT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 35 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOW THRESHOLD
35 A
.0215 ohm
TO-252AA
260
50 W
140 A
STP11NM60A
STP11NM60A from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 11A max drain current, and 110W power dissipation. This versatile FET operates efficiently in high-temperature environments up to 150 °C.
11 A
.45 ohm
110 W
44 A
STP16NS25FP
STP16NS25FP by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 16 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
600 mJ
16 A
.28 ohm
40 W
64 A
STS4DNFS30L
STS4DNFS30L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
4 A
.065 ohm
e4
2 W
NICKEL PALLADIUM GOLD
NTD30N02T4
NTD30N02T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V Min DS Breakdown Voltage, 100A Max Pulsed Drain Current, and 0.0145 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
50 mJ
24 V
.0145 ohm
75 W
NTD80N02T4
NTD80N02T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 80A, Min DS Breakdown Voltage of 24V, and Max Pulsed Drain Current of 200A. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 75W, making it ideal for high-power switching applications.
733 mJ
.0058 ohm
200 A
NTD80N02
NTD80N02 by Onsemi is a single N-channel power FET with built-in diode, ideal for switching applications. It features a max drain current of 80A, min DS breakdown voltage of 24V, and max pulsed drain current of 200A. With a package style of small outline and operating temperature up to 150 °C, it offers efficient performance in various electronic devices.
NTP52N10
NTP52N10 by Onsemi is a Power FET with 100V DS Breakdown Voltage, 156A IDM, and 0.03 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. The package style is FLANGE MOUNT with SILICON element material and 150 °C max operating temp.
800 mJ
100 V
60 A
.03 ohm
178 W
156 A
STB20NM60T4
STB20NM60T4 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 80A max pulsed drain current, 650mJ avalanche energy rating, and 0.29 ohm max drain-source resistance. Operating in enhancement mode, it has a max power dissipation of 192W and can withstand up to 150°C.
650 mJ
20 A
.29 ohm
TO-263AB
192 W
STB85NF55LT4
STB85NF55LT4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient performance in power management systems.
980 mJ
.01 ohm
STP11NM60FDFP
STP11NM60FDFP by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM, 350mJ EAS, and 0.45 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 35W at 150°C.
35 W
STP85NF55L
STP85NF55L by STMicroelectronics is a N-CHANNEL FET with 55V DS Breakdown Voltage, 320A IDM, and 0.01 ohm RDS(on). It's used for SWITCHING applications due to its 300W Pdiss, ENHANCEMENT MODE operation, and built-in DIODE.
STW26NM60
STW26NM60 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 120A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
740 mJ
26 A
.135 ohm
240 W
STP16NF06FP
STP16NF06FP from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 11 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for efficient power management in various electronic circuits.
130 mJ
25 W
SPB10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
60 mJ
10.3 A
.17 ohm
220
41.2 A
SPB21N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Minimum DS Breakdown Voltage: 100 V; Avalanche Energy Rating (EAS): 130 mJ;
21 A
90 W
84 A
SPD100N03S2L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Terminal Finish: MATTE TIN;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
325 mJ
.0063 ohm
TO-252
R-PSSO-G4
150 W
SPD11N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .17 ohm;
10.5 A
SPD35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
245 mJ
.044 ohm
SPI10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; No. of Terminals: 3; Terminal Position: SINGLE;
65 pF
-55 Cel
79 ns
81 ns
SPI80N03S2L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: MATTE TIN;
380 mJ
188 W
SPP10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Feedback Capacitance (Crss): 65 pF; Operating Mode: ENHANCEMENT MODE;
SPP21N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Minimum DS Breakdown Voltage: 100 V; Maximum Drain Current (Abs) (ID): 21 A;
SPU11N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE;
TO-251
STD10PF06-1
STD10PF06-1 from STMicroelectronics is a P-channel FET designed for switching applications, featuring a max drain current of 10 A and a breakdown voltage of 60 V. It operates in enhancement mode with low on-resistance of 0.2 Ω. Ideal for efficient power management in compact designs.
125 mJ
.2 ohm
P-CHANNEL
Other Transistors
TIN
STS4NF100
STS4NF100 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 100 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
.07 ohm
2.5 W
STW80NF55-08
STW80NF55-08 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 55 V. It operates in enhancement mode with low on-resistance of just 0.008 Ω. This robust transistor supports high power dissipation up to 300 W, making it suitable for demanding electronic circuits.
1000 mJ
.008 ohm
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