Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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PHX18NQ20T,127
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;
ISOLATED
SINGLE WITH BUILT-IN DIODE
200 V
8.2 A
.18 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
30 W
33 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
PHX20N06T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 23 W; Maximum Pulsed Drain Current (IDM): 51.6 A; Maximum Drain-Source On Resistance: .075 ohm;
30.3 mJ
55 V
12.9 A
.075 ohm
TO-220AB
23 W
51.6 A
PHX23NQ10T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 27 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 100 V;
FAST SWITCHING
93 mJ
100 V
13 A
.07 ohm
27 W
52 A
PHX23NQ11T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41.6 W; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 64.3 A;
110 V
16 A
41.6 W
64.3 A
PHX34NQ11T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56.8 W; Maximum Pulsed Drain Current (IDM): 99.4 A; Case Connection: ISOLATED;
115 mJ
24.8 A
.04 ohm
56.8 W
99.4 A
PHX45NQ11T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62.5 W; Maximum Drain Current (Abs) (ID): 30.4 A; Transistor Element Material: SILICON;
250 mJ
30.4 A
.025 ohm
62.5 W
121 A
PHX8NQ11T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 27.7 W; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
35 mJ
7.5 A
27.7 W
30.2 A
PHX9NQ20T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 5.2 A;
5.2 A
.4 ohm
25 W
21 A
PSMN004-36B,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2;
LOGIC LEVEL COMPATIBLE
120 mJ
DRAIN
36 V
75 A
.0054 ohm
R-PSSO-G2
2
SMALL OUTLINE
240 A
YES
TIN
GULL WING
PSMN004-55W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 100 A; Additional Features: LOGIC LEVEL COMPATIBLE;
357 mJ
100 A
.005 ohm
TO-247
175 Cel
300 W
300 A
PSMN004-60P,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
500 mJ
60 V
.0036 ohm
NOT SPECIFIED
230 W
400 A
PSMN005-25D,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G2; Additional Features: LOGIC LEVEL COMPATIBLE;
25 V
.0075 ohm
PSMN005-55B,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
268 mJ
.0067 ohm
PSMN005-55P,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING;
PSMN009-100W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
650 mJ
.009 ohm
PSMN020-150W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .02 ohm; JESD-30 Code: R-PSFM-T3;
707 mJ
150 V
73 A
.02 ohm
290 A
PSMN040-200W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Avalanche Energy Rating (EAS): 661 mJ; JESD-609 Code: e3;
661 mJ
50 A
200 A
SI4800,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: NICKEL PALLADIUM GOLD; JEDEC-95 Code: MS-012AA;
30 V
9 A
.0185 ohm
MS-012AA
R-PDSO-G8
e4
8
40 A
NICKEL PALLADIUM GOLD
DUAL
AO6402AL
Alpha & Omega Semiconductor
AO6402AL by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.027 ohm RDS(ON). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this MOSFET has 30A IDM and GULL WING terminals.
.027 ohm
R-PDSO-G6
6
30 A
AO6402A
AO6402A by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.027 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 30A IDM and built-in DIODE. Ideal for surface mount designs due to GULL WING terminals and SMALL OUTLINE package style.
NVD4804NT4G
Onsemi
NVD4804NT4G by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 230A, avalanche energy rating of 450mJ, and max power dissipation of 107W. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and enhanced performance capabilities.
450 mJ
124 A
14.5 A
.0055 ohm
-55 Cel
260
107 W
230 A
AEC-Q101
30
NTD4863NA-1G
Onsemi's NTD4863NA-1G is a Power FET with 25V DS Breakdown Voltage, 98A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features N-CHANNEL polarity, SINGLE configuration with BUILT-IN DIODE. Package: PLASTIC/EPOXY RECTANGULAR IN-LINE with THROUGH-HOLE terminals.
60.5 mJ
9.2 A
.014 ohm
R-PSIP-T3
IN-LINE
98 A
Tin (Sn)
NTD4863NAT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
STI150N10F7
STMicroelectronics
STI150N10F7 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 110 A, a breakdown voltage of 100 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
495 mJ
110 A
.0042 ohm
67 pF
TO-262AA
250 W
440 A
STP5N60M2
STP5N60M2 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 3.5A max drain current. It operates in enhancement mode with a max power dissipation of 45W. Its compact design ensures efficient thermal management in various electronic circuits.
AVALANCHE ENERGY RATED
80 mJ
600 V
3.5 A
1.4 ohm
.75 pF
45 W
14 A
85 ns
15 ns
DMN2009LSS-13
Diodes Incorporated
DMN2009LSS-13 by Diodes Inc. is a power FET with N-channel polarity and a built-in diode. It is used for switching applications, has a min DS breakdown voltage of 20V, and can handle a max pulsed drain current of 42A.
LOW THRESHOLD
20 V
12 A
.008 ohm
2 W
42 A
FET General Purpose Powers
STB14NM65N
STB14NM65N by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
300 mJ
650 V
.38 ohm
TO-263AB
245
125 W
48 A
STB24NM65N
STB24NM65N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 76A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
19 A
.19 ohm
160 W
76 A
STD10NM65N
STD10NM65N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 36A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
.48 ohm
TO-252AA
90 W
36 A
Matte Tin (Sn) - annealed
STF10NM65N
STF10NM65N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and 36A pulsed drain current. It operates in enhancement mode with a max power dissipation of 25W. Its compact design ensures efficient thermal management in various electronic circuits.
STF14NM65N
STF14NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STF24NM65N
STF24NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
40 W
STI24NM65N
STI24NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
Matte Tin (Sn)
STP10NM65N
STP10NM65N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 36A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in various electronic devices.
STP14NM65N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: Matte Tin (Sn); Transistor Element Material: SILICON;
STP24NM65N
STP24NM65N by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 76A IDM, 500mJ EAS, and 0.19 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and TIN terminal finish.
STU10NM65N
STU10NM65N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and 36A pulsed drain current. It operates in enhancement mode with a max power dissipation of 90W. This versatile FET is suitable for high-efficiency power management.
TO-251AA
STW14NM65N
STW14NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 12A max drain current, and 125W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
STW24NM65N
STW24NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW75NF30
STW75NF30 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, breakdown voltage of 300 V, and power dissipation up to 320 W. Ideal for high-efficiency power management in various electronic devices.
300 V
60 A
.045 ohm
TO-247AD
320 W
NDF06N60ZG
NDF06N60ZG by Onsemi is a Power FET with 600V DS Breakdown Voltage, 28A IDM, and 113mJ EAS. Ideal for power applications requiring high voltage tolerance and current handling capabilities. Suitable for use in industrial equipment, power supplies, and motor control systems due to its robust design and performance.
113 mJ
7.1 A
1.2 ohm
35 W
28 A
NDF10N60ZG
NDF10N60ZG by Onsemi is a Power FET with 600V DS Breakdown Voltage, 40A IDM, and 0.75 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operation at up to 150°C temperature.
10 A
6 A
.75 ohm
39 W
NTD5867NL-1G
NTD5867NL-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS. Ideal for applications requiring high power dissipation up to 36W in enhancement mode operation. Suitable for various electronic devices due to its N-channel configuration and built-in diode feature.
AVALANCHE RATED
18 mJ
20 A
.05 ohm
36 W
20.6 ns
19.1 ns
STF13NM60N-H
STF13NM60N-H from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 11A max drain current. It offers a low on-resistance of 0.36Ω and operates at up to 150 °C. This versatile FET is packaged in a flange mount design for easy integration.
200 mJ
11 A
.36 ohm
44 A
STW21N90K5
STW21N90K5 by STMicroelectronics is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 170mJ EAS, and 0.299 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with 210W Pd max and can withstand up to 150°C.
170 mJ
900 V
17 A
.299 ohm
210 W
68 A
BSC240N12NS3G
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; No. of Terminals: 8; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
50 mJ
120 V
37 A
.024 ohm
R-PDSO-N8
66 W
148 A
NO LEAD
SPB100N03S2-03G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Peak Reflow Temperature (C): 245; Operating Mode: ENHANCEMENT MODE;
810 mJ
.003 ohm
SPB10N10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V; Package Body Material: PLASTIC/EPOXY;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
60 mJ
10.3 A
.21 ohm
42.2 A
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