Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FDD26AN06A0_F085
Fairchild Semiconductor
Fairchild Semiconductor FDD26AN06A0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has 36A Drain Current, 0.026 ohm On Resistance, and 75W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 175 °C.
35 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
36 A
7 A
.026 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252AA
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
75 W
Not Qualified
AEC-Q101
FET General Purpose Power
YES
MATTE TIN
GULL WING
SINGLE
30
SWITCHING
SILICON
FDP2710_F085
FDP2710_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 50A Drain Current, and 0.047 ohm On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 260W and can handle an Avalanche Energy of 483mJ.
483 mJ
250 V
50 A
4 A
.047 ohm
TO-220AB
R-PSFM-T3
3
150 Cel
FLANGE MOUNT
260 W
NO
THROUGH-HOLE
BSP030,115
NXP Semiconductors
NXP Semiconductors' BSP030,115 is a N-CHANNEL FET with 30V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at 150°C max temp, it has 0.03 ohm Drain-Source On Resistance.
LOGIC LEVEL COMPATIBLE
30 V
10 A
.03 ohm
R-PDSO-G4
4
1.25 W
40 A
TIN
DUAL
BUK119-50DL,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 50 V; Transistor Application: SWITCHING; JESD-609 Code: e3;
BUILT-IN OVER TEMPERATURE CIRCUIT
50 V
20 A
.028 ohm
BUK7511-55B,127
NXP Semiconductors BUK7511-55B,127 is a N-channel FET with 55V DS breakdown voltage and 338A pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 157W and operating temperature of 175°C, this MOSFET offers high performance in various power electronics systems.
173 mJ
55 V
75 A
.011 ohm
157 W
338 A
BUK75150-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36.6 W; Maximum Drain Current (Abs) (ID): 11 A; Terminal Position: SINGLE;
16 mJ
11 A
.15 ohm
36.6 W
44 A
BUK7520-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 118 W; Maximum Pulsed Drain Current (IDM): 217 A; JESD-609 Code: e3;
115 mJ
54 A
.02 ohm
118 W
217 A
BUK7526-100B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 157 W; Maximum Pulsed Drain Current (IDM): 197 A; Minimum DS Breakdown Voltage: 100 V;
144 mJ
100 V
49 A
197 A
BUK7528-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 96 W; Maximum Drain Current (ID): 40 A; Maximum Pulsed Drain Current (IDM): 160 A;
ESD PROTECTION
70 mJ
160 pF
96 W
160 A
62 ns
94 ns
BUK753R1-40B,127
NXP Semiconductors BUK753R1-40B,127 is a N-channel FET with 40V DS breakdown voltage and 902A IDM for switching applications. It features a single configuration with built-in diode, 0.0031 ohm RDS(on), and 300W Pd max in a plastic/epoxy package. Ideal for enhancement mode operation at up to 175°C.
1600 mJ
40 V
.0031 ohm
300 W
902 A
BUK7575-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Terminal Position: SINGLE; Maximum Feedback Capacitance (Crss): 85 pF;
30 mJ
19.7 A
.075 ohm
85 pF
61 W
79 A
45 ns
35 ns
BUK7605-30A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE; Transistor Application: SWITCHING;
500 mJ
.005 ohm
400 A
BUK7614-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Avalanche Energy Rating (EAS): 125 mJ; Case Connection: DRAIN;
125 mJ
73 A
.014 ohm
245
166 W
266 A
BUK7615-100A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 240 A; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
120 mJ
.015 ohm
240 A
BUK7616-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; No. of Terminals: 2;
65.7 A
.016 ohm
263 A
BUK7624-55,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 55 V; Case Connection: DRAIN;
80 mJ
45 A
.024 ohm
180 pF
103 W
180 A
60 ns
53 ns
BUK78150-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Drain Current (Abs) (ID): 5.5 A; Maximum Drain Current (ID): 5.5 A;
25 mJ
5.5 A
8 W
22 A
BUK78150-55A,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; JESD-609 Code: e3; Case Connection: DRAIN;
BUK7880-55,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
7.5 A
.08 ohm
8.3 W
39 ns
BUK9222-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 103 W; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
160 mJ
48 A
TO-252
193 A
BUK9506-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 616 A;
1100 mJ
.0067 ohm
230 W
616 A
BUK9506-75B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
852 mJ
75 V
.0066 ohm
612 A
BUK9508-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
670 mJ
.0085 ohm
200 W
503 A
BUK9508-55B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 203 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
352 mJ
.0093 ohm
203 W
439 A
BUK9509-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 211 W; JEDEC-95 Code: TO-220AB; JESD-609 Code: e3;
400 mJ
108 A
.01 ohm
211 W
433 A
BUK9515-100A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Minimum DS Breakdown Voltage: 100 V; Terminal Finish: TIN;
313 A
BUK9518-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Application: SWITCHING; Package Style (Meter): FLANGE MOUNT;
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
57 A
.018 ohm
290 pF
125 W
228 A
215 ns
175 ns
BUK9520-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 116 W; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 235 pF;
110 mJ
52 A
235 pF
116 W
208 A
225 ns
200 ns
BUK9528-100A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Drain-Source On Resistance: .028 ohm; Terminal Position: SINGLE;
45 mJ
195 A
BUK9529-100B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 157 W; Terminal Position: SINGLE; Transistor Application: SWITCHING;
152 mJ
46 A
.032 ohm
186 A
BUK952R8-30B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
2300 mJ
.003 ohm
950 A
BUK9535-100A,127
NXP Semiconductors' BUK9535-100A,127 is an N-channel Power FET with 100V DS breakdown voltage and 165A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.039 ohm max RDS(on). Operating in enhancement mode, this transistor has a max power dissipation of 149W at 175°C.
41 A
.039 ohm
149 W
165 A
BUK953R2-40B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Transistor Element Material: SILICON;
1200 mJ
100 A
.0035 ohm
888 A
BUK954R4-40B,127
NXP Semiconductors' BUK954R4-40B,127 is a N-channel Power FET with 40V DS breakdown voltage and 697A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0044 ohm max on-resistance, and 961mJ avalanche energy rating.
961 mJ
.0044 ohm
254 W
697 A
BUK9575-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62 W; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
72 mJ
.081 ohm
62 W
81 A
BUK9608-55,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: 187 W; Maximum Turn Off Time (toff): 435 ns; No. of Terminals: 2;
.008 ohm
480 pF
187 W
435 ns
230 ns
BUK9610-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Avalanche Energy Rating (EAS): 333 mJ; Peak Reflow Temperature (C): 245;
333 mJ
.075 A
Tin (Sn)
BUK9611-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON;
330 mJ
.012 ohm
BUK9618-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Terminal Position: SINGLE; Avalanche Energy Rating (EAS): 127 mJ;
127 mJ
61 A
.019 ohm
136 W
246 A
BUK9620-100A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE; Terminal Position: SINGLE;
420 mJ
63 A
.022 ohm
253 A
BUK9635-100A,118
NXP Semiconductors' BUK9635-100A,118 is a N-channel Power FET with 100V DS breakdown voltage and 165A IDM. Ideal for switching applications, it features a built-in diode, 0.039 ohm RDS(on), and 175°C max operating temp.
150 W
BUK9635-55,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Minimum DS Breakdown Voltage: 55 V; Package Body Material: PLASTIC/EPOXY;
34 A
.035 ohm
85 W
136 A
FET General Purpose Powers
BUK98150-55,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .15 ohm;
15 mJ
2.6 A
1.8 W
30 A
BUK9832-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 47 A;
100 mJ
12 A
.036 ohm
47 A
BUK9840-55,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Avalanche Energy Rating (EAS): 60 mJ; Operating Mode: ENHANCEMENT MODE;
60 mJ
10.7 A
5 A
.04 ohm
BUK9880-55,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Additional Features: ESD PROTECTED, LOGIC LEVEL COMPATIBLE; Maximum Drain Current (ID): 3.5 A;
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
3.5 A
BUK9880-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
36 mJ
.089 ohm
BUK9E3R2-40B,127
BUK9E3R2-40B,127 by NXP Semiconductors is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A Max ID. Ideal for SWITCHING applications, it features a built-in DIODE, 888A IDM, and 0.0035 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 300W and can withstand up to 175°C.
TO-262AA
R-PSIP-T3
IN-LINE
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