Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SIHFR430ATR-GE3
Vishay Intertechnology
Vishay Intertechnology's SIHFR430ATR-GE3 is a N-channel FET with 500V DS breakdown voltage, ideal for switching applications. Features include 20A pulsed drain current, 130mJ avalanche energy rating, and 1.7 ohm max drain-source resistance. Its small outline package and high power dissipation make it suitable for enhancement mode operation in various electronic devices.
130 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
500 V
5 A
1.7 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
110 W
20 A
Not Qualified
FET General Purpose Powers
YES
MATTE TIN
GULL WING
SINGLE
30
SWITCHING
SILICON
SIHFR430ATRL-GE3
Vishay Intertechnology's SIHFR430ATRL-GE3 is a N-channel Power FET with 500V DS breakdown voltage, ideal for switching applications. It features 20A max pulsed drain current and 1.7ohm max drain-source resistance. With a package style of small outline and operating temperature up to 150°C, it offers high performance in compact designs.
SIHFR430ATRR-GE3
SIHFR430ATRR-GE3 by Vishay Intertechnology is a N-channel power FET with a min DS breakdown voltage of 500V. It is used for switching applications and has a max pulsed drain current of 20A.
FDC642P_F085
Fairchild Semiconductor
FDC642P_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 4A Drain Current, and 0.065 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount assembly.
72 mJ
20 V
4 A
.065 ohm
R-PDSO-G6
6
P-CHANNEL
1.2 W
Other Transistors
DUAL
SUP85N10-10P-GE3
Vishay Intertechnology's SUP85N10-10P-GE3 is a N-channel Power FET with 100V DS breakdown voltage and 240A max pulsed drain current. Ideal for high-power applications, it features a built-in diode, 0.01 ohm max RDS(on), and 180mJ avalanche energy rating.
180 mJ
100 V
85 A
.01 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
NOT SPECIFIED
227 W
240 A
FET General Purpose Power
NO
THROUGH-HOLE
CSD75211W1723
Texas Instruments
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Form: BALL; Terminal Finish: TIN SILVER COPPER;
4.5 A
.07 ohm
R-PBGA-B12
e1
12
GRID ARRAY
1.5 W
TIN SILVER COPPER
BALL
BOTTOM
NTD5413NT4G
Onsemi
NTD5413NT4G by Onsemi is an N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 84A and EAS of 135mJ, suitable for high-power operations. With a 0.026 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C, making it versatile for various industrial uses.
135 mJ
60 V
30 A
.026 ohm
175 Cel
68 W
84 A
TIN
SI7790DP-T1-GE3
Vishay Intertechnology's SI7790DP-T1-GE3 is an N-channel FET with a built-in diode, ideal for switching applications. It features a 40V DS breakdown voltage, 70A max pulsed drain current, and 0.0045 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates at up to 150°C for enhanced performance.
80 mJ
40 V
50 A
.0045 ohm
R-XDSO-C5
5
UNSPECIFIED
69 W
70 A
Matte Tin (Sn)
C BEND
DMP3035LSS-13
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;
HIGH RELIABILITY
30 V
12 A
.016 ohm
R-PDSO-G8
8
2.5 W
40 A
DMP3100L-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
LOW THRESHOLD, HIGH RELIABILITY
2.7 A
.1 ohm
R-PDSO-G3
1.08 W
8 A
IPI200N15N3G
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
170 mJ
150 V
.02 ohm
TO-262AA
R-PSIP-T3
IN-LINE
150 W
200 A
SPB80P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 340 W; JESD-30 Code: R-PSSO-G2; No. of Elements: 1;
AVALANCHE RATED
824 mJ
80 A
.023 ohm
TO-263AB
e0
220
340 W
320 A
TIN LEAD
SPN04N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 600 V;
600 V
.8 A
.95 ohm
TO-261AA
R-PDSO-G4
4
1.8 W
3 A
MTP20N15E
MTP20N15E by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 112W at 150 °C.
60 mJ
.13 ohm
235
112 W
60 A
NTB75N06LT4
NTB75N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications due to its 214W Pdiss, 175 °C Temp Rating, and EAS of 844mJ. Package: PLASTIC/EPOXY, GULL WING Terminals, ENHANCEMENT MODE operation.
844 mJ
75 A
.011 ohm
214 W
225 A
NTB75N06L
The Onsemi NTB75N06L is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 225A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.011 ohm RDS(on), and 214W Pdiss. Suitable for surface mount designs in power electronics up to 175 °C operating temp.
NTD20N03L27
NTD20N03L27 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temperature of 150 °C, making it ideal for high-power switching circuits.
288 mJ
.031 ohm
1.75 W
NTD20N06T4
NTD20N06T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. This MOSFET operates in ENHANCEMENT MODE with a max power dissipation of 60W, making it ideal for high-power switching circuits.
.046 ohm
60 W
NTD3055-094-1
NTD3055-094-1 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.094 ohm RDS(on). Ideal for switching applications, it features an N-channel configuration in a plastic/epoxy package with built-in diode. Operating in enhancement mode, this MOSFET has a max power dissipation of 1.5W at 175 °C.
61 mJ
.094 ohm
45 A
NTD3055-094
NTD3055-094 by Onsemi is a Power FET with N-CHANNEL configuration and built-in diode, ideal for switching applications. It features a 60V DS breakdown voltage, 45A pulsed drain current, and 0.094 ohm max on-resistance. With a small outline package style and operating temp of 175 °C, it's suitable for various electronic designs.
NTD3055L104
NTD3055L104 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). With a max power dissipation of 48W and operating temperature range of -55 to 175 °C, it is ideal for various electronic designs requiring high-performance transistors.
.104 ohm
-55 Cel
48 W
NTP75N06L
NTP75N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.011 ohm RDS. It's used for SWITCHING applications due to its 214W Pdiss, 175 °C Temp, and EAS of 844mJ.
NTP75N06
NTP75N06 by Onsemi is a Power FET with N-CHANNEL polarity, ideal for SWITCHING applications. It features a 60V DS Breakdown Voltage, 225A Pulsed Drain Current, and 0.0095 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max temperature of 175 °C.
.0095 ohm
2.4 W
NTB45N06LT4
NTB45N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Drain Current, 0.028 ohm On Resistance, and 150A Pulsed Drain Current. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 175 °C.
LOGIC LEVEL COMPATIBLE
240 mJ
.028 ohm
150 A
NTB60N06LT4
NTB60N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
454 mJ
180 A
Tin/Lead (Sn/Pb)
NTB60N06L
NTB60N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.016 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power circuit designs requiring efficient switching capabilities.
NTD32N06L
NTD32N06L by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.028 ohm On Resistance. It is an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. The package is PLASTIC/EPOXY with GULL WING terminals, suitable for surface mount assembly.
313 mJ
32 A
90 A
NTD32N06
NTD32N06 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 93.75W and can handle up to 90A pulsed drain current.
93.75 W
NTD4302T4
NTD4302T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 28A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE and has a max temperature rating of 150 °C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
722 mJ
8.4 A
1.04 W
28 A
NTD4302
NTD4302 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 28A Pulsed Drain Current, and 0.01 ohm Drain-Source Resistance. The transistor operates in ENHANCEMENT MODE and has a max temperature of 150 °C.
NTP27N06
NTP27N06 by Onsemi is a power FET with 60V DS breakdown voltage, 80A IDM, and 0.046 ohm RDS(on). Ideal for switching applications, it features an N-channel configuration with built-in diode. Operating in enhancement mode, this MOSFET has a max power dissipation of 88.2W and can withstand temperatures up to 175 °C.
109 mJ
27 A
88.2 W
NTP45N06L
NTP45N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 150A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.4W at 175 °C.
NTP45N06
NTP45N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 125W Power Dissipation capabilities in ENHANCEMENT MODE operation.
125 W
NTP60N06L
NTP60N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 150W and can withstand temperatures up to 175 °C.
NTP60N06
NTP60N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS. It's used for SWITCHING applications due to its 150W Pdiss, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.
.014 ohm
NTP75N03L09
NTP75N03L09 by Onsemi is a Power FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(on). It's an N-CHANNEL transistor for SWITCHING applications. The package is RECTANGULAR with THROUGH-HOLE terminals, suitable for ENHANCEMENT MODE operation up to 150 °C.
1500 mJ
.008 ohm
STW14NM50
STMicroelectronics
STW14NM50 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 14A max drain current. It offers a low on-resistance of 0.35Ω and can handle up to 175W power dissipation. Its robust design ensures reliability in high-temperature environments (up to 150 °C).
ULTRA-LOW RESISTANCE
400 mJ
14 A
.35 ohm
TO-247
175 W
56 A
STS5PF30L
STS5PF30L by STMicroelectronics is a P-CHANNEL FET with 30V DS Breakdown Voltage, 20A IDM, and 0.075 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates at up to 150°C.
LOW THRESHOLD
.075 ohm
e4
NICKEL PALLADIUM GOLD
40
BSO4410
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 11.1 A; Transistor Element Material: SILICON;
126 mJ
11.1 A
.013 ohm
44.5 A
BSO4420
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
230 mJ
13 A
.0078 ohm
52 A
BSO4822
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
165 mJ
12.7 A
51 A
BSP615S2L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
55 V
2.8 A
.15 ohm
11 A
IPD20N03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Operating Temperature: 175 Cel; Minimum DS Breakdown Voltage: 30 V;
15 mJ
TO-252AA
255
42 W
120 A
SPB100N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
810 mJ
100 A
.003 ohm
300 W
400 A
SPB100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Maximum Operating Temperature: 175 Cel;
.0034 ohm
SPB42N03S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
110 mJ
42 A
.0196 ohm
64 W
248 A
SPB77N06S2-12
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Drain-Source On Resistance: .012 ohm; Minimum DS Breakdown Voltage: 55 V;
280 mJ
77 A
.012 ohm
140 W
SPB80N04S2-H4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Transistor Element Material: SILICON; Terminal Position: SINGLE;
660 mJ
.004 ohm
250 W
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