Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SPB80N04S2L-03
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AA; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
810 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
80 A
.0042 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AA
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
300 W
320 A
Not Qualified
FET General Purpose Power
YES
MATTE TIN
GULL WING
SINGLE
SWITCHING
SILICON
SPB80N06S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Minimum DS Breakdown Voltage: 55 V; Maximum Operating Temperature: 175 Cel;
AVALANCHE RATED
530 mJ
55 V
.0066 ohm
TO-263AB
250 W
SPB80N06S2-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; JEDEC-95 Code: TO-263AB; Package Body Material: PLASTIC/EPOXY;
370 mJ
.0091 ohm
190 W
SPB80N06S2L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 2; Maximum Drain Current (ID): 80 A;
.0084 ohm
SPB80N06S2L-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Avalanche Energy Rating (EAS): 370 mJ; No. of Terminals: 2;
.0113 ohm
SPB80N06S2L-11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 80 A; JEDEC-95 Code: TO-263AB;
280 mJ
.0147 ohm
150 W
SPD14N06S2-80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Finish: MATTE TIN; Additional Features: AVALANCHE RATED;
43 mJ
14 A
17 A
.08 ohm
TO-252
30 W
68 A
SPD15N06S2L-64
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
15 A
19 A
.085 ohm
e0
76 A
TIN LEAD
SPD26N06S2L-35
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 26 A;
80 mJ
26 A
30 A
.047 ohm
50 W
120 A
SPD30N03S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
250 mJ
30 V
.0098 ohm
3
260
125 W
SPD30N03S2L-10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 82 W; Maximum Drain Current (Abs) (ID): 30 A; No. of Elements: 1;
150 mJ
.0146 ohm
82 W
SPD30N03S2L-20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Package Style (Meter): SMALL OUTLINE;
70 mJ
.031 ohm
TO-252AA
42 W
SPD30N06S2-23
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 55 V;
.023 ohm
83 W
SPI100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Qualification: Not Qualified;
100 A
.0037 ohm
TO-262AA
R-PSIP-T3
IN-LINE
400 A
NO
THROUGH-HOLE
SPP100N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 30 V; Qualification: Not Qualified;
.0033 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
SPP100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
SPP42N03S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 64 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
110 mJ
42 A
.0199 ohm
64 W
248 A
SPP77N06S2-12
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 80 A;
77 A
.012 ohm
140 W
SPP80N04S2-H4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
660 mJ
.004 ohm
SPP80N06S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; Maximum Operating Temperature: 175 Cel;
SPP80N06S2-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Additional Features: AVALANCHE RATED; Maximum Drain-Source On Resistance: .0091 ohm;
SPP80N06S2L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .0084 ohm;
SPP80N06S2L-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Avalanche Energy Rating (EAS): 370 mJ; Maximum Pulsed Drain Current (IDM): 320 A;
SPP80N06S2L-11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
STB20NM60-1
STMicroelectronics
STB20NM60-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. Ideal for high-performance power management in various electronic devices.
650 mJ
600 V
20 A
.29 ohm
150 Cel
192 W
TIN
STP14NF10
STP14NF10 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 15 A and a breakdown voltage of 100 V. It operates in enhancement mode with a low on-resistance of 0.13 Ω. Ideal for high-efficiency power management solutions.
100 V
.13 ohm
60 W
60 A
STP16NF06L
STP16NF06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 64A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its 175°C Max Temp, 127mJ EAS rating, and SINGLE configuration with BUILT-IN DIODE.
127 mJ
60 V
16 A
.1 ohm
45 W
64 A
STW45NM50FD
STW45NM50FD by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 180A IDM and 800mJ EAS. Operating in ENHANCEMENT MODE, it has a max power dissipation of 417W and can handle up to 45A drain current.
800 mJ
500 V
45 A
TO-247
417 W
180 A
Matte Tin (Sn)
FDS2170N7
Fairchild Semiconductor
FDS2170N7 by Fairchild Semiconductor is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current and 0.128 ohm Max Drain-Source On Resistance. The PLASTIC/EPOXY package with GULL WING terminals operates in ENHANCEMENT MODE at up to 150°C.
400 mJ
200 V
3 A
.128 ohm
R-PDSO-G8
e4
8
3 W
NICKEL PALLADIUM GOLD
DUAL
STS2DPFS20V
STS2DPFS20V by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 2.5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact SO8 package ensures easy surface mounting in various electronic devices.
SO-8
20 V
2 A
2.5 A
.25 ohm
P-CHANNEL
2 W
10 A
Other Transistors
NTB13N10
Onsemi
NTB13N10 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 39A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.165 ohm RDS(on), and 175 °C max operating temp. Perfect for high-power switching circuits in various electronic devices.
85 mJ
13 A
.165 ohm
235
64.7 W
39 A
FET General Purpose Powers
NTB18N06LT4
NTB18N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Max Pulsed Drain Current and 61mJ Avalanche Energy Rating. With a compact RECTANGULAR package and ENHANCEMENT MODE operation, it offers efficient power management in various electronic devices.
LOGIC LEVEL COMPATIBLE
61 mJ
48.4 W
NTB18N06L
NTB18N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, suitable for SWITCHING applications. It features a max IDM of 45A and EAS of 61mJ, making it ideal for high-power requirements. With a low 0.1 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C, offering reliable performance in various electronic systems.
NTB22N06LT4
NTB22N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 66A IDM, and 0.065 ohm RDS. Ideal for SWITCHING applications due to its 175 °C Max Temp and 72mJ EAS rating. Features GULL WING terminals in a SMALL OUTLINE package style.
72 mJ
22 A
.065 ohm
66 A
NTB22N06T4
NTB22N06T4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 66A IDM, and 0.06 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max power dissipation of 60W and can withstand temperatures up to 175 °C.
.06 ohm
NTB30N06LT4
NTB30N06LT4 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 30A Drain Current, and 0.046 ohm On Resistance. Ideal for SWITCHING applications, it features a 90A Pulsed Drain Current and 101mJ Avalanche Energy Rating. The PLASTIC/EPOXY package with GULL WING terminals operates in ENHANCEMENT MODE up to 175 °C.
101 mJ
.046 ohm
88.2 W
90 A
NTB30N06L
The Onsemi NTB30N06L is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 30A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 90A Pulsed Drain Current, and 0.046 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
NTB35N15T4
NTB35N15T4 by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage, 111A IDM, and 0.05 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 178W. The transistor features a built-in diode and can withstand temperatures up to 150 °C.
700 mJ
150 V
37 A
.05 ohm
178 W
111 A
NTD12N10T4
NTD12N10T4 by Onsemi is a Power FET with 100V DS Breakdown Voltage, 36A IDM, and 0.165 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, this N-CHANNEL transistor features a built-in DIODE and operates at up to 175 °C.
75 mJ
12 A
56.6 W
36 A
NTD18N06LT4
NTD18N06LT4 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
18 A
1.5 W
54 A
NTD18N06L
NTD18N06L by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS. Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 1.5W and can handle up to 175 °C temperature.
NTD18N06
NTD18N06 by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a 60V min DS breakdown voltage, 54A max pulsed drain current, and 0.06 ohm max drain-source resistance. This MOSFET operates in enhancement mode with a max temperature of 175 °C, making it suitable for high-power applications.
NTD20N06LT4
NTD20N06LT4 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.048 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and 175 °C Operating Temperature.
128 mJ
.048 ohm
1.36 W
NTD24N06L
NTD24N06L by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a max drain current of 24A, min DS breakdown voltage of 60V, and peak reflow temperature of 235 °C. This MOSFET operates in enhancement mode with a low on-resistance of 0.045 ohm, making it suitable for high-power applications.
162 mJ
24 A
.045 ohm
-55 Cel
72 A
NTD3055-150T4
NTD3055-150T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 27A Max Pulsed Drain Current, and 0.15 ohm Max Drain-Source Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 175 °C.
30 mJ
9 A
.15 ohm
27 A
NTD3055L170
NTD3055L170 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and 175 °C max operating temp.
.17 ohm
NTF3055-100T1
NTF3055-100T1 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.11 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a SMALL OUTLINE package with GULL WING terminals. Operating in ENHANCEMENT MODE, this FET has a max power dissipation of 1.3W at 175°C.
74 mJ
.11 ohm
TO-261AA
R-PDSO-G4
4
1.3 W
NTF3055-100T3LF
NTF3055-100T3LF by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.11 ohm RDS(on). Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 1.3W.
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