Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STP5NK40Z
STMicroelectronics
STP5NK40Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 400V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for efficient power management in various electronic circuits.
130 mJ
SINGLE WITH BUILT-IN DIODE
400 V
3 A
1.8 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
45 W
12 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STP7NK40ZFP
STP7NK40ZFP from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 400V breakdown voltage, 5.4A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
ISOLATED
5.4 A
1 ohm
25 W
21.6 A
STP9NK65ZFP
STP9NK65ZFP by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 25.6A Max Pulsed Drain Current and 1.2 ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
200 mJ
650 V
6.4 A
1.2 ohm
30 W
25.6 A
STP9NK65Z
STP9NK65Z by STMicroelectronics is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 25.6A IDM, 200mJ EAS, and 1.2ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150°C, making it suitable for high-power circuits.
125 W
STW14NK60Z
STW14NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 54A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
AVALANCHE RATED
300 mJ
600 V
13.5 A
.5 ohm
TO-247AC
160 W
54 A
STW15NK50Z
STW15NK50Z by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 56A pulsed drain current and 0.34 ohm max on-resistance, ensuring efficient operation. With a max power dissipation of 160W and operating temperature up to 150°C, it offers reliable performance in various industrial settings.
HIGH VOLTAGE
500 V
14 A
.34 ohm
TO-247
56 A
Matte Tin (Sn)
STB9NK50ZT4
STB9NK50ZT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 7.2A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
190 mJ
7.2 A
.85 ohm
R-PSSO-G2
2
SMALL OUTLINE
245
110 W
28.8 A
YES
Matte Tin (Sn) - annealed
GULL WING
30
STD30PF03L-1
STD30PF03L-1 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 24 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
850 mJ
30 V
24 A
.04 ohm
TO-251AA
R-PSIP-T3
175 Cel
IN-LINE
P-CHANNEL
70 W
96 A
Other Transistors
STD30PF03LT4
STD30PF03LT4 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 24 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for compact power management in surface mount designs.
TO-252AA
260
STD38NH02LT4
STD38NH02LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 38 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for compact power management in electronics.
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
250 mJ
DRAIN
24 V
38 A
.0135 ohm
40 W
152 A
STD5NK60ZT4
STD5NK60ZT4 by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max Drain Current of 5A and Max Power Dissipation of 90W. This ENHANCEMENT MODE transistor operates at up to 150°C and has a built-in diode in a small outline package.
220 mJ
5 A
1.6 ohm
90 W
20 A
STD38NH02L-1
STD38NH02L-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 38 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
TO-251
STD90NH02LT4
STD90NH02LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOW THRESHOLD
600 mJ
60 A
.006 ohm
95 W
240 A
STP14NF12FP
STP14NF12FP by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8.5 A, a breakdown voltage of 120 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
60 mJ
120 V
8.5 A
.18 ohm
34 A
STP14NF12
STP14NF12 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 14 A, a breakdown voltage of 120 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
60 W
STS6PF30L
STS6PF30L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 6 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
6 A
.042 ohm
R-PDSO-G8
e4
8
2.5 W
NICKEL PALLADIUM GOLD
DUAL
STS7PF30L
STS7PF30L by STMicroelectronics is a P-CHANNEL FET with 30V DS breakdown voltage and 28A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.028 ohm max RDS(on), and operates in enhancement mode.
7 A
.028 ohm
NOT SPECIFIED
28 A
IPB05N03LA
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Minimum DS Breakdown Voltage: 25 V; Transistor Application: SWITCHING;
LOGIC LEVEL COMPATIBLE
25 V
80 A
.0078 ohm
TO-263AB
e0
220
94 W
385 A
TIN LEAD
IPB06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Peak Reflow Temperature (C): 220; Terminal Finish: TIN LEAD;
225 mJ
91 A
50 A
.0095 ohm
83 W
350 A
IPB14N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Minimum DS Breakdown Voltage: 25 V; Terminal Finish: TIN LEAD;
30 A
.0136 ohm
46 W
210 A
IPI06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
.0099 ohm
TO-262AA
IPI09N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Maximum Drain-Source On Resistance: .0155 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
75 mJ
65 A
.0155 ohm
63 W
IPP05N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 80 A; Maximum Drain Current (ID): 80 A;
.0081 ohm
IPP06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; No. of Elements: 1; Package Shape: RECTANGULAR;
IPP09N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP14N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; Maximum Operating Temperature: 175 Cel; Qualification: Not Qualified;
.0139 ohm
IPU07N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Maximum Pulsed Drain Current (IDM): 210 A; Terminal Form: THROUGH-HOLE;
375 mJ
.0101 ohm
SPP15P10P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 128 W; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 60 A;
230 mJ
100 V
15 A
.24 ohm
128 W
STD110NH02LT4
STD110NH02LT4 by STMicroelectronics is a N-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A Max Pulsed Drain Current, 0.005ohm Max RDS(on), and 175°C Max Operating Temp. Suitable for high-power switching circuits in various electronic devices.
900 mJ
20 V
.005 ohm
TO-252
120 W
320 A
STT3PF20V
STT3PF20V by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 2.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
2.2 A
.25 ohm
R-PDSO-G6
6
1.6 W
8.8 A
STD150NH02LT4
STD150NH02LT4 by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 150 A, breakdown voltage of 24 V, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
500 mJ
150 A
.0035 ohm
150 W
600 A
STD4NK50Z-1
STD4NK50Z-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
120 mJ
2.7 ohm
STD50NH02LT4
STD50NH02LT4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 50 A, low on-resistance of 0.0105 Ω, and operates up to 175 °C. Ideal for power management in compact electronic devices.
280 mJ
.0105 ohm
200 A
STP10NK70Z
STP10NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 34A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
350 mJ
700 V
8.6 A
STP150NF55
STP150NF55 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
55 V
120 A
300 W
480 A
TIN
STP17NK40Z
STP17NK40Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 400V breakdown voltage, 15A max drain current, and 150W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
450 mJ
STP4NK50ZFP
STP4NK50ZFP by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 12A max pulsed drain current. It operates in enhancement mode with a max power dissipation of 20W. This versatile transistor is suitable for high-temperature environments up to 150 °C.
20 W
STP4NK50Z
STP4NK50Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 3A. It operates in enhancement mode with a power dissipation of up to 45W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
STW150NF55
STW150NF55 by STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a max drain current of 120 A and a breakdown voltage of 55 V. It operates in enhancement mode with low on-resistance (0.006 Ω). Ideal for high-efficiency power management in various electronic devices.
STW200NF03
STW200NF03 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 120 A and a breakdown voltage of 30 V. It operates in enhancement mode with low on-resistance of 0.0028 Ω. This robust transistor supports high power dissipation up to 350 W.
4000 mJ
.0028 ohm
350 W
STSJ100NH3LL
STSJ100NH3LL by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
22 A
100 A
400 A
STB16NS25T4
STB16NS25T4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 16 A, breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for compact power management solutions.
250 V
16 A
.28 ohm
140 W
64 A
STP80PF55
STP80PF55 by STMicroelectronics is a P-CHANNEL FET with 55V DS Breakdown Voltage, 320A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications, it has a max power dissipation of 300W and operates at up to 175°C.
1400 mJ
.018 ohm
STB35NF10T4
STB35NF10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.035 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 115W Pdiss and -55 to 175°C temp range.
40 A
.035 ohm
-55 Cel
115 W
160 A
STD4NK80Z-1
STD4NK80Z-1 by STMicroelectronics is a N-channel power FET with 800V DS breakdown voltage. It features 12A max pulsed drain current and 3.5 ohm max RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 80W.
800 V
3.5 ohm
80 W
STP11NM80
STP11NM80 by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM, 400mJ EAS, and 0.4 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 205W at 150°C.
ULTRA-LOW RESISTANCE
400 mJ
11 A
.4 ohm
205 W
44 A
NTB65N02R
Onsemi
NTB65N02R by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0105 ohm RDS(on), and 78W Pdiss. Suitable for surface mount with GULL WING terminals, this MOSFET operates in ENHANCEMENT MODE up to 150 °C.
7.6 A
235
78 W
NTP65N02R
NTP65N02R by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 160A IDM, and 0.0105 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style: FLANGE MOUNT, operating temp: 150 °C, and EAS of 60mJ make it suitable for high-power tasks.
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