Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTF3055-160T3LF
Onsemi
NTF3055-160T3LF by Onsemi is a Power FET with 60V DS Breakdown Voltage, 6A IDM, and 0.16 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals. Operating up to 175 °C, it offers a peak reflow temperature of 235°C.
65 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
2 A
.16 ohm
METAL-OXIDE SEMICONDUCTOR
TO-261
R-PDSO-G4
e0
1
4
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
235
N-CHANNEL
1.3 W
6 A
Not Qualified
FET General Purpose Power
YES
TIN LEAD
GULL WING
DUAL
SWITCHING
SILICON
NTF3055L108T3LF
NTF3055L108T3LF by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 2.1W. It comes in a PLASTIC/EPOXY package style with GULL WING terminals.
74 mJ
3 A
.12 ohm
TO-261AA
3
2.1 W
9 A
NTF3055L175T1
NTF3055L175T1 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 2A Max Drain Current, and 0.175 ohm Max RDS(on). Ideal for switching applications, it features an Enhancement Mode in a small outline package with Gull Wing terminals. Operating at up to 175 °C, it has a built-in diode and can handle pulsed currents up to 6A.
LOGIC LEVEL COMPATIBLE
.175 ohm
NTF3055L175T3LF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum DS Breakdown Voltage: 60 V; Transistor Application: SWITCHING;
NTF3055L175T3
NTF3055L175T3 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 6A IDM, and 0.175 ohm RDS(on). Ideal for switching applications, it features an Enhancement Mode in a small outline package with Gull Wing terminals. Operating at up to 175 °C, it has a built-in diode and can handle 65mJ EAS.
NTP13N10
NTP13N10 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 100V DS Breakdown Voltage, 39A IDM, and 0.165 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 54W.
85 mJ
100 V
13 A
.165 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
54 W
39 A
NO
THROUGH-HOLE
SINGLE
NTP18N06L
NTP18N06L by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 45A IDM, and 0.1 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C, making it suitable for high-power tasks.
61 mJ
15 A
.1 ohm
48.4 W
45 A
Tin/Lead (Sn80Pb20)
30
NTP22N06L
NTP22N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 66A IDM, and 0.065 ohm RDS. Ideal for SWITCHING applications due to its 175 °C Max Temp and 72 mJ EAS rating. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.
72 mJ
22 A
.065 ohm
60 W
66 A
FET General Purpose Powers
NTP27N06L
NTP27N06L by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A Max ID, and 0.048 ohm RDS(on). It's an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has 80A IDM and 94mJ EAS ratings.
94 mJ
27 A
.048 ohm
88.2 W
80 A
NTP30N06L
NTP30N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 30A Drain Current, and 0.046 ohm On Resistance. It is used for SWITCHING applications due to its 90A Pulsed Drain Current and 101mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 88.2W at 175 °C temperature.
101 mJ
30 A
.046 ohm
90 A
NTP30N06
NTP30N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.042 ohm RDS(ON). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 88.2W and can handle up to 175 °C temperature.
.042 ohm
NTB18N06
NTB18N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 48.4W power dissipation in a SMALL OUTLINE package.
.09 ohm
R-PSSO-G2
2
NTP18N06
NTP18N06 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with built-in diode in a RECTANGULAR package. Operating in enhancement mode at up to 175 °C, this MOSFET has a max power dissipation of 48.4W.
IXTY01N80
IXYS Corporation
IXYS Corporation's IXTY01N80 is a N-CHANNEL FET with 800V DS breakdown voltage. It is used for switching applications in enhancement mode, featuring a max ID of 0.1A and RDS(on) of 50 ohm. The transistor operates at up to 150°C, making it suitable for various power control systems.
800 V
.1 A
50 ohm
TO-252AA
e3
150 Cel
260
.4 A
MATTE TIN
10
SPB11N60C2
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Elements: 1; Additional Features: AVALANCHE RATED;
AVALANCHE RATED
340 mJ
600 V
11 A
.38 ohm
TO-263AB
125 W
SPD04N60C3
Infineon's SPD04N60C3 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 13.5A pulsed drain current, 130mJ avalanche energy rating, and 0.95ohm max on resistance. Its small outline package and 150°C operating temp make it suitable for various power management needs.
130 mJ
4.5 A
.95 ohm
50 W
13.5 A
TIN
SPI47N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
400 mJ
47 A
.04 ohm
R-PSIP-T3
IN-LINE
175 W
188 A
SPI70N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Finish: MATTE TIN; Qualification: Not Qualified;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
700 mJ
70 A
.025 ohm
TO-262AA
250 W
280 A
SPB100N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Case Connection: DRAIN;
810 mJ
40 V
100 A
.0033 ohm
300 W
400 A
SPB100N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 100 A;
55 V
.0047 ohm
SPB100N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
.0056 ohm
SPB100N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): SMALL OUTLINE; Terminal Finish: MATTE TIN;
75 V
.0068 ohm
SPB100N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Maximum Drain Current (ID): 100 A;
.0084 ohm
SPB80N03S2L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 320 A; Avalanche Energy Rating (EAS): 240 mJ;
240 mJ
30 V
.0092 ohm
320 A
SPD25N06S2-40
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Terminal Position: SINGLE; No. of Terminals: 2;
80 mJ
25 A
29 A
TO-252
116 A
SPD50N03S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSSO-G2;
250 mJ
50 A
.0073 ohm
200 A
SPD50N06S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Minimum DS Breakdown Voltage: 55 V; Case Connection: DRAIN;
.0167 ohm
SPP100N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 40 V; JESD-30 Code: R-PSFM-T3;
.0036 ohm
SPP100N04S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Package Shape: RECTANGULAR;
.0044 ohm
SPP100N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 3; Transistor Element Material: SILICON;
.005 ohm
SPP100N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.0059 ohm
SPP100N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;
.0071 ohm
SPP100N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain-Source On Resistance: .0087 ohm;
.0087 ohm
STP8NM50FP
STMicroelectronics
STP8NM50FP from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 32A max pulsed drain current, and operates at up to 150 °C. Its compact design ensures efficient performance in power management systems.
200 mJ
ISOLATED
500 V
5 A
8 A
.8 ohm
30 W
32 A
STP8NM50
STP8NM50 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 32A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
120 W
STP11NM60FP
STP11NM60FP by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A Max Pulsed Drain Current and 350mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE with 0.45 ohm On Resistance, suitable for high-power circuits.
350 mJ
.45 ohm
35 W
44 A
STB85NF55T4
STB85NF55T4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
980 mJ
.008 ohm
245
Matte Tin (Sn) - annealed
STD3NM50T4
STD3NM50T4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 12A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
3 ohm
46 W
12 A
STD3NM60-1
STD3NM60-1 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for efficient power management in various electronic devices.
1.5 ohm
TO-251
STD3NM60T4
STD3NM60T4 by STMicroelectronics is a single N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STP85NF55
STP85NF55 by STMicroelectronics is a N-CHANNEL FET with 55V DS Breakdown Voltage, 320A IDM, and 0.008 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-power requirements.
BSL307SP
Infineon Technologies' BSL307SP is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a 22A Max IDM and 0.043 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power tasks in various electronic systems.
44 mJ
5.5 A
.043 ohm
R-PDSO-G6
6
P-CHANNEL
2 W
Other Transistors
SPB80N06S2-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 80 A; Maximum Drain-Source On Resistance: .0055 ohm;
.0055 ohm
SPD07N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; No. of Elements: 1; Additional Features: AVALANCHE RATED;
230 mJ
7.3 A
.6 ohm
83 W
21.9 A
SPP80N06S2-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSFM-T3; Package Shape: RECTANGULAR;
BSL207SP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 44 mJ; Maximum Pulsed Drain Current (IDM): 24 A; Maximum Drain Current (ID): 6 A;
20 V
.041 ohm
-55 Cel
24 A
AEC-Q101
BSL211SP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN;
26 mJ
4.7 A
.067 ohm
18.8 A
SPB80N06S2L-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 80 A; No. of Terminals: 2;
.0065 ohm
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