Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STP2NK60Z
STMicroelectronics
STP2NK60Z by STMicroelectronics is an N-channel FET ideal for switching applications. It features a 600V breakdown voltage, 1.5A max drain current, and operates at up to 150 °C. This versatile transistor is suitable for various power management tasks in electronic circuits.
90 mJ
SINGLE WITH BUILT-IN DIODE
600 V
1.4 A
1.5 A
8 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
45 W
6 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STQ2NK60ZR-AP
STQ2NK60ZR-AP by STMicroelectronics is an N-channel FET designed for switching applications. It features a 600V breakdown voltage, 1.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
.4 A
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
3 W
1.6 A
BOTTOM
FDD24AN06LA0_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDD24AN06LA0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.019 ohm.
32 mJ
DRAIN
60 V
40 A
7.1 A
.019 ohm
TO-252AA
R-PSSO-G2
2
175 Cel
-55 Cel
SMALL OUTLINE
260
75 W
AEC-Q101
YES
GULL WING
30
FQB22P10TM_F085
FQB22P10TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, 88A IDM, and 0.125 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 125W at 175°C.
710 mJ
100 V
22 A
.125 ohm
245
P-CHANNEL
125 W
88 A
Other Transistors
STW43NM60ND
STW43NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 140A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
1000 mJ
35 A
.088 ohm
TO-247
255 W
140 A
NTTFS4823NTAG
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 32.9 W; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN;
31 mJ
30 V
50 A
12.6 A
.0175 ohm
S-PDSO-N5
5
SQUARE
NOT SPECIFIED
32.9 W
150 A
Tin (Sn)
NO LEAD
DUAL
STP80NF03L
STP80NF03L by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and low on-resistance of 0.0065 Ω. This robust FET operates efficiently up to 175 °C.
2300 mJ
80 A
.0065 ohm
320 A
TIN
NTD60N02RT4G
NTD60N02RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 48W, making it ideal for high-performance electronic devices.
60 mJ
25 V
32 A
.0105 ohm
48 W
NTB5605PT4
NTB5605PT4 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 55A IDM, and 0.14 ohm RDS(on). With a max power dissipation of 73.5W and operating temperature up to 150 °C, it's ideal for high-power switching circuits.
338 mJ
17 A
18.5 A
.14 ohm
e0
235
73.5 W
55 A
TIN LEAD
NTB5605P
The Onsemi NTB5605P is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 55A and EAS of 338mJ, suitable for high-power operations. With a low 0.14 ohm RDS(on), it offers efficient performance in ENHANCEMENT MODE operation at up to 150 °C.
STB11NM60FDT4
STB11NM60FDT4 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 44A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 160W max power dissipation. Package style is small outline with gull wing terminals, suitable for surface mount assembly at up to 245°C peak reflow temperature.
350 mJ
11 A
.45 ohm
160 W
44 A
Matte Tin (Sn) - annealed
SPI08N80C3
Infineon Technologies
Infineon's SPI08N80C3 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. It features 24A IDM, 340mJ EAS, and 0.65 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with max temp of 150°C, making it suitable for high-power circuits.
AVALANCHE RATED, HIGH VOLTAGE
340 mJ
800 V
8 A
.65 ohm
TO-262AA
R-PSIP-T3
IN-LINE
104 W
24 A
SPN03N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; JEDEC-95 Code: TO-261AA; Package Style (Meter): SMALL OUTLINE;
.7 A
1.4 ohm
TO-261AA
R-PDSO-G4
4
255
1.8 W
3 A
IPI032N06N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Maximum Drain Current (Abs) (ID): 120 A; Package Style (Meter): IN-LINE;
235 mJ
120 A
.0032 ohm
188 W
480 A
IPI90R800C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; JEDEC-95 Code: TO-262AA; JESD-30 Code: R-PSIP-T3;
157 mJ
900 V
6.9 A
.8 ohm
15 A
STB21NK50Z
STB21NK50Z by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
850 mJ
500 V
.27 ohm
TO-263AB
190 W
68 A
STB30NM50N
STB30NM50N from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 27A max drain current. It offers a low on-resistance of 0.115Ω and operates at up to 150 °C. Its compact design suits surface mount configurations.
900 mJ
ISOLATED
27 A
.115 ohm
108 A
STB35N65M5
STB35N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 108A IDM, and 0.098 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 27A ID and 160W Pd. Package style is SMALL OUTLINE, suitable for surface mount with GULL WING terminals.
800 mJ
650 V
.098 ohm
STD150N3LLH6
STD150N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A Max Pulsed Drain Current and 0.0045 ohm Max RDS(on), operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and 110W Power Dissipation, it offers high performance in various power management systems.
525 mJ
.0045 ohm
TO-252
110 W
STD8NM60ND
STD8NM60ND by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
200 mJ
7 A
.7 ohm
70 W
28 A
STF30NM50N
STF30NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 27A max drain current. It operates in enhancement mode with a low on-resistance of 0.115Ω. This robust transistor supports high power dissipation up to 40W.
40 W
STF35N65M5
STF35N65M5 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 40W power dissipation. This robust FET operates efficiently in high-temperature environments up to 150 °C.
STF8NM60ND
STF8NM60ND by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-efficiency power management solutions.
25 W
STI35N65M5
STI35N65M5 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 160W power dissipation. Its robust design ensures reliability in high-temperature environments up to 150 °C.
STP16N65M5
STP16N65M5 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 650V breakdown voltage, 12A max drain current, and 90W power dissipation. This robust transistor operates efficiently in high-temperature environments up to 150 °C.
ULTRA-LOW RESISTANCE
12 A
.279 ohm
90 W
48 A
STP190N55LF3
STP190N55LF3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
55 V
312 W
Matte Tin (Sn)
STP30NM50N
STP30NM50N from STMicroelectronics is a powerful N-channel FET ideal for switching applications. It features a 500V breakdown voltage, 27A max drain current, and 190W power dissipation. Its robust design suits high-performance power management systems.
STP35N65M5
STP35N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STP8NM60ND
STP8NM60ND by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STU16N65M5
STU16N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-251
STW30NM50N
STW30NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 27A max drain current. It offers a low on-resistance of 0.115Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
TO-247AC
STW35N65M5
STW35N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STY130NF20D
STY130NF20D from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 130 A, breakdown voltage of 200 V, and power dissipation up to 450 W. Ideal for high-performance power management in various electronic devices.
200 V
130 A
.012 ohm
450 W
520 A
NTD3055-094G
NTD3055-094G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A Max Pulsed Drain Current, and 0.094 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE and has a max operating temperature of 175 °C.
61 mJ
.094 ohm
1.5 W
45 A
NTD3055-094-1G
NTD3055-094-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.094 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. The package is RECTANGULAR with THROUGH-HOLE terminals, operating in ENHANCEMENT MODE up to 175 °C.
RTQ040P02TR
ROHM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 16 A; Package Body Material: PLASTIC/EPOXY;
20 V
4 A
.055 ohm
R-PDSO-G6
e1
6
1.25 W
16 A
TIN SILVER COPPER
10
BSF045N03MQ3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
30 mJ
63 A
18 A
.0059 ohm
R-MBCC-N2
METAL
CHIP CARRIER
28 W
252 A
STK30N2LLH5
STK30N2LLH5 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a low on-resistance of 0.0036 Ω, and operates at up to 25 V breakdown voltage. Ideal for compact designs, it comes in a no-lead surface mount package.
30 A
.0036 ohm
R-XDSO-N4
UNSPECIFIED
NTD60N02RG
NTD60N02RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE and has a max power dissipation of 48W.
NTD70N03R-001
Onsemi's NTD70N03R-001 is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. Features include 32A max drain current, 0.013 ohm max on resistance, and 140A pulsed drain current. Ideal for enhancing performance in power management systems.
71.7 mJ
.013 ohm
NTD70N03RG
NTD70N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 140A, Max Operating Temperature of 150 °C, and Max Drain Current of 32A. This MOSFET has a low on-resistance of 0.013 ohm and is designed for surface mount installation in various electronic devices.
62.8 A
1.56 W
NTHS2101PT1G
NTHS2101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 8V DS Breakdown Voltage, 5.4A Drain Current, and 0.025 ohm On Resistance. Ideal for power management in compact devices due to its small outline package and high power dissipation capability of 1.3W.
LOGIC LEVEL COMPATIBLE
8 V
5.4 A
.025 ohm
R-XDSO-C8
8
1.3 W
7.5 A
C BEND
MTP10N10ELG
MTP10N10ELG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 35A IDM and 40W Pd, it operates in enhancement mode at up to 150 °C, making it ideal for high-power requirements.
50 mJ
10 A
.22 ohm
NTB25P06G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V;
600 mJ
25 A
27.5 A
.082 ohm
100 W
NTF3055L108T3G
NTF3055L108T3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 9A Max Pulsed Drain Current, and 0.12 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 2.1W, making it ideal for high-power switching circuits.
74 mJ
.12 ohm
2.1 W
9 A
NTF3055L108T3LFG
NTF3055L108T3LFG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and dual terminal position.
NTF3055L175T1G
NTF3055L175T1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 2A Max Drain Current, and 0.175 ohm Max RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 6A IDM and 65mJ EAS. Package style is SMALL OUTLINE with GULL WING terminals.
65 mJ
2 A
.175 ohm
NTF3055L175T3G
NTF3055L175T3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 6A Max Pulsed Drain Current, and 0.175 ohm Max Drain-Source Resistance. Ideal for use in ENHANCEMENT MODE operations with a max temp of 175 °C.
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