Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STW12NM60N
STMicroelectronics
STW12NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 10A max drain current. It offers a low on-resistance of 0.41Ω and operates at up to 150 °C. This versatile FET is packaged in a flange mount design for easy integration.
200 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
600 V
10 A
.41 ohm
METAL-OXIDE SEMICONDUCTOR
TO-247
R-PSFM-T3
e3/e1
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
90 W
40 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN/TIN SILVER COPPER
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
BUK7109-75ATE,118
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 245;
739 mJ
75 V
120 A
75 A
.009 ohm
R-PSSO-G4
e3
4
175 Cel
SMALL OUTLINE
245
272 W
480 A
YES
TIN
GULL WING
30
BUK764R3-40B,118
NXP Semiconductors BUK764R3-40B,118 is a N-channel FET with 40V DS breakdown voltage and 706A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0043 ohm max on-resistance, and 961mJ avalanche energy rating.
961 mJ
40 V
176 A
.0043 ohm
R-PSSO-G2
2
254 W
706 A
BUK9609-55A,118
NXP Semiconductors BUK9609-55A,118 is a N-channel FET with 55V DS breakdown voltage and 433A pulsed drain current. Ideal for switching applications, it features a built-in diode, 108A max ID, and 0.01 ohm RDS(on). The transistor operates in enhancement mode with a max power dissipation of 211W at 175°C.
400 mJ
55 V
108 A
.01 ohm
211 W
433 A
BUK98150-55A,135
NXP Semiconductors' BUK98150-55A,135 is a N-channel Power FET with 55V DS breakdown voltage and 22A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.161 ohm max on-resistance, and operates in enhancement mode.
22 mJ
5 A
5.5 A
.161 ohm
R-PDSO-G4
260
6 W
22 A
DUAL
BUK98180-100A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
16 mJ
100 V
4.6 A
.201 ohm
8 W
18 A
BUK9875-100A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Peak Reflow Temperature (C): 260; Maximum Pulsed Drain Current (IDM): 28 A;
49 mJ
7 A
.084 ohm
-55 Cel
28 A
IRFR220,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .8 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
200 V
4.8 A
.8 ohm
TO-252
19 A
PH16030L,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Finish: TIN; Transistor Application: SWITCHING;
LOGIC LEVEL
30 V
38 A
16.9 ohm
MO-235
100 A
PH3830L,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN;
250 mJ
98 A
.0049 ohm
62.5 W
290 A
MATTE TIN
PH5330E,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
130 mJ
80 A
.0085 ohm
250 A
PH6030L,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Transistor Element Material: SILICON; No. of Terminals: 4;
95 mJ
76.7 A
.0097 ohm
300 A
PHB101NQ04T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 157 W; Case Connection: DRAIN; No. of Elements: 1;
.008 ohm
157 W
240 A
PHB108NQ03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Maximum Drain Current (ID): 75 A; Operating Mode: ENHANCEMENT MODE;
LOGIC LEVEL COMPATIBLE
180 mJ
25 V
.0075 ohm
PHB110NQ06LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
280 mJ
.0093 ohm
200 W
PHB119NQ06T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; JESD-30 Code: R-PSSO-G2; Terminal Finish: TIN;
.0071 ohm
PHB143NQ04T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 240 A; Maximum Drain-Source On Resistance: .0052 ohm;
475 mJ
.0052 ohm
PHB153NQ08LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: LOGIC LEVEL COMPATIBLE; Transistor Element Material: SILICON;
560 mJ
.0066 ohm
PHB160NQ08T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 75 A;
.0056 ohm
300 W
PHB38N02LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2; Terminal Form: GULL WING;
20 V
44.7 A
.016 ohm
179 A
PHD16N03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 32 A; Terminal Position: SINGLE; Case Connection: DRAIN;
16 A
.067 ohm
32 A
PHD22NQ20T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 200 V; No. of Elements: 1;
150 mJ
21.1 A
.12 ohm
42.2 A
PHD34NQ10T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Maximum Drain Current (ID): 35 A; Maximum Drain Current (Abs) (ID): 35 A;
170 mJ
35 A
.04 ohm
136 W
140 A
FET General Purpose Powers
PHD36N03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57.6 W; Maximum Drain Current (ID): 43.4 A; No. of Terminals: 2;
43.4 A
57.6 W
173.6 A
PHD82NQ03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; JEDEC-95 Code: TO-252AA; Minimum DS Breakdown Voltage: 30 V;
TO-252AA
PHK12NQ10T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Maximum Pulsed Drain Current (IDM): 48 A; Operating Mode: ENHANCEMENT MODE;
65 mJ
11.6 A
.028 ohm
MS-012AA
R-PDSO-G8
e4
8
8.9 W
48 A
Nickel/Palladium/Gold (Ni/Pd/Au)
PHM12NQ20T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Terminal Position: DUAL; Transistor Element Material: SILICON;
20.4 A
.085 ohm
R-PDSO-N2
60 A
NO LEAD
PHM15NQ20T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .085 ohm; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
210 mJ
17.5 A
R-PDSO-N8
PHM18NQ15T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 170 mJ;
150 V
.075 ohm
76 A
PHM21NQ15T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: .055 ohm; Qualification: Not Qualified;
22.2 A
.055 ohm
PHM25NQ10T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-N8; Minimum DS Breakdown Voltage: 100 V;
30.7 A
.03 ohm
PIP3107-D,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-609 Code: e3; Terminal Position: SINGLE;
50 V
PSMN003-30B,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 75 A; Transistor Application: SWITCHING;
500 mJ
.004 ohm
400 A
PSMN9R0-30YL,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Peak Reflow Temperature (C): 260; Terminal Form: GULL WING;
61 A
55 A
.0138 ohm
46 W
223 A
Tin (Sn)
STD100N3LF3
STD100N3LF3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
.0055 ohm
110 W
320 A
STF17NF25
STF17NF25 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
100 mJ
ISOLATED
250 V
17 A
.165 ohm
TO-220AB
25 W
68 A
STI17NF25
STI17NF25 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-262AA
R-PSIP-T3
IN-LINE
40
STB300NH02L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 120 A; Maximum Pulsed Drain Current (IDM): 480 A;
1600 mJ
24 V
.0018 ohm
STP300NH02L
STP300NH02L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 24 V, and power dissipation up to 300 W. Ideal for high-efficiency power management in various electronic devices.
.0022 ohm
NTD6600N-1G
Onsemi
NTD6600N-1G by Onsemi is a single N-channel power FET with built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 100V, max pulsed drain current of 44A, and max drain-source on resistance of 0.146 ohm. This MOSFET operates in enhancement mode with an avalanche energy rating of 72mJ, making it suitable for high-power applications.
72 mJ
12 A
.146 ohm
44 A
Matte Tin (Sn)
STP160N75F3
STP160N75F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.
.0045 ohm
330 W
STP30NM30N
STP30NM30N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, breakdown voltage of 300 V, and power dissipation up to 160 W. Ideal for high-efficiency circuits in various electronic devices.
900 mJ
300 V
30 A
.09 ohm
160 W
STP5NK65ZFP
STP5NK65ZFP from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 18A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE RATED
650 V
4.5 A
1.8 ohm
STV160NF02LAT4
STV160NF02LAT4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, low on-resistance of 0.0037 Ω, and operates at a breakdown voltage of 20 V. Ideal for high-performance power management in compact designs.
330 mJ
160 A
.0037 ohm
R-PDSO-G10
10
640 A
STV160NF03LAT4
STV160NF03LAT4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, low on-resistance of 0.004 Ω, and a breakdown voltage of 30 V. Ideal for power management in compact electronic devices.
STV300NH02L
STV300NH02L by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 280 A, a breakdown voltage of 24 V, and operates at temperatures from -55 °C to 175°C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
2296 mJ
280 A
.001 ohm
R-XDSO-G10
UNSPECIFIED
250
1120 A
STW160N75F3
STW160N75F3 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.
TO-247AB
IPB114N03LG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
30 mJ
.0114 ohm
TO-263AB
38 W
210 A
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