Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FDD4243_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDD4243_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 24A Drain Current, and 0.044 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 42W and wide operating temperature range (-55 to 175 °C).
ULTRA-LOW RESISTANCE
84 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
24 A
14 A
.044 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252AA
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
P-CHANNEL
42 W
Not Qualified
AEC-Q101
Other Transistors
YES
MATTE TIN
GULL WING
SINGLE
30
SWITCHING
SILICON
FDD6637_F085
FDD6637_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 55A, 0.0116 ohm On Resistance, and operates in ENHANCEMENT MODE. This METAL-OXIDE SEMICONDUCTOR transistor has a max power dissipation of 57W and can withstand temperatures up to 175°C.
61 mJ
35 V
55 A
21 A
.0116 ohm
57 W
STP130NH02L
STMicroelectronics
STP130NH02L by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage, 360A IDM, and 0.0044 ohm RDS(on). Ideal for SWITCHING applications due to its 175°C Max Operating Temp and 150W Power Dissipation. It features SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package.
LOW THRESHOLD
900 mJ
24 V
90 A
.0044 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
N-CHANNEL
150 W
360 A
FET General Purpose Power
NO
THROUGH-HOLE
SPI47N10
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Additional Features: AVALANCHE RATED; Maximum Pulsed Drain Current (IDM): 188 A;
AVALANCHE RATED
400 mJ
100 V
47 A
.033 ohm
TO-262AA
R-PSIP-T3
IN-LINE
175 W
188 A
DMP3025LK3-13
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
30 V
16.1 A
10.6 A
.025 ohm
150 Cel
10 W
41.9 A
STW22NM60N
STW22NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 16A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
300 mJ
600 V
16 A
.22 ohm
TO-247
125 W
64 A
Matte Tin (Sn)
IPD50R520CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Maximum Drain Current (Abs) (ID): 7.1 A; JESD-609 Code: e3;
166 mJ
500 V
7.1 A
.52 ohm
66 W
15 A
TIN
IPI50R350CP
IPI50R350CP by Infineon is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It has a max IDM of 22A and EAS of 246mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.35 ohm RDS(on) and can handle up to 89W power dissipation at 150°C.
246 mJ
10 A
.35 ohm
89 W
22 A
NTMFS5844NLT1G
Onsemi
NTMFS5844NLT1G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 243A IDM, and 0.016 ohm RDS(on). Ideal for power management applications due to its 107W Pdiss, EAS of 48mJ, and operating temp up to 150°C. Suitable for surface mount designs with small outline package style.
48 mJ
60 V
61 A
11 A
.016 ohm
R-PDSO-F5
5
107 W
243 A
FLAT
DUAL
IRF6648TR1PBF
International Rectifier
IRF6648TR1PBF by International Rectifier is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 260A.
LOW CONDUCTION LOSS
47 mJ
86 A
.007 ohm
R-XBCC-N3
e1
UNSPECIFIED
CHIP CARRIER
2.8 W
260 A
TIN SILVER COPPER
NO LEAD
BOTTOM
IPD50R399CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; JESD-30 Code: R-PSSO-G2; Avalanche Energy Rating (EAS): 215 mJ;
215 mJ
9 A
.399 ohm
83 W
20 A
IPS50R520CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 66 W; JESD-30 Code: R-PSIP-T3; Maximum Operating Temperature: 150 Cel;
TO-251
NOT SPECIFIED
NTP5404NRG
NTP5404NRG by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 40V, max pulsed drain current of 258A, and max power dissipation of 254W. Ideal for enhancement mode operation in high-power systems with its low on-resistance of 0.0045 ohm.
1000 mJ
167 A
136 A
.0045 ohm
254 W
258 A
STB36NM60N
STB36NM60N by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 25A max drain current, and 250W power dissipation. Ideal for high-performance power management in compact designs.
345 mJ
25 A
29 A
.105 ohm
TO-263AB
245
250 W
116 A
Matte Tin (Sn) - annealed
DMN2027LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
20 V
17 A
11.6 A
.021 ohm
8.9 W
46.8 A
DMN3020LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Maximum Drain-Source On Resistance: .02 ohm; Qualification: Not Qualified;
16.7 A
11.3 A
.02 ohm
51 A
FET General Purpose Powers
DMN4009LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.3 W; Transistor Element Material: SILICON; No. of Terminals: 2;
18 A
.0085 ohm
10.3 W
96.6 A
DMN4015LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10.3 W; Case Connection: DRAIN; No. of Elements: 1;
20.8 A
13.5 A
.015 ohm
72.8 A
STD75N3LLH6
STD75N3LLH6 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 75A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 60W. Ideal for high-power switching circuits requiring efficient performance.
75 A
.008 ohm
TO-252
60 W
300 A
STL9N3LLH5
STL9N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
.022 ohm
S-XDSO-N5
SQUARE
50 W
36 A
STU75N3LLH6
STU75N3LLH6 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
.0084 ohm
NTMS4920NR2G
NTMS4920NR2G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 136A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.0043 ohm Drain-Source Resistance and 41pF Feedback Capacitance.
162 mJ
.0043 ohm
41 pF
R-PDSO-G8
8
2.12 W
40
NTD4809NH-1G
NTD4809NH-1G by Onsemi is a N-channel Power FET with 30V DS breakdown voltage and 130A IDM. Ideal for switching applications, it features a built-in diode, 0.0125 ohm RDS(on), and 52W max power dissipation. Operating in enhancement mode, this MOSFET has a max temp of 175 °C and is designed for through-hole mounting.
112.5 mJ
58 A
.0125 ohm
52 W
130 A
NTB75N03-6G
NTB75N03-6G by Onsemi is a N-channel FET with 30V DS breakdown voltage, 225A IDM, and 0.0065 ohm RDS(on). Ideal for switching applications in enhancement mode, it features a built-in diode and operates in avalanche energy rating of 1500 mJ.
ULTRA LOW RESISTANCE
1500 mJ
.0065 ohm
225 A
IPB120N04S3-02
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 2; Transistor Element Material: SILICON;
1880 mJ
120 A
.0023 ohm
300 W
480 A
IPB70N04S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Drain-Source On Resistance: .0071 ohm; Transistor Element Material: SILICON;
145 mJ
70 A
.0071 ohm
79 W
280 A
IPD70N04S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Feedback Capacitance (Crss): 130 pF; Maximum Pulsed Drain Current (IDM): 280 A;
82 A
.006 ohm
130 pF
IPD80N06S3-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
170 mJ
55 V
80 A
320 A
IPP80N04S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum DS Breakdown Voltage: 40 V; Maximum Drain-Source On Resistance: .0042 ohm;
290 mJ
.0042 ohm
136 W
NTLJD4150PTBG
NTLJD4150PTBG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features a max IDM of 14A and ID of 3.4A, with an RDS(on) of 0.135 ohm. This MOSFET operates in ENHANCEMENT MODE, has a max power dissipation of 2.3W, and can withstand temperatures from -55 to 150 °C.
3.4 A
2.7 A
.135 ohm
S-PDSO-N6
6
2.3 W
STL80N4LLF3
STL80N4LLF3 by STMicroelectronics is an N-channel FET designed for high-efficiency applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
R-PDSO-N8
80 W
STS15N4LLF3
STS15N4LLF3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE up to 150°C.
2000 mJ
e4
2.7 W
60 A
NICKEL PALLADIUM GOLD
NTD4813NH-1G
NTD4813NH-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 90A IDM, and 0.0259 ohm RDS(ON). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for high-current applications like motor control and power supplies.
44.4 mJ
40 A
.0259 ohm
STB20NM60D
STB20NM60D by STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 20A max drain current, and 192W power dissipation. Ideal for power management in various electronic devices.
700 mJ
.29 ohm
192 W
STD50N03L-1
STD50N03L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
230 mJ
ISOLATED
.019 ohm
TO-251AB
160 A
STD50N03L
STD50N03L by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 40 A and a breakdown voltage of 30 V. It offers low on-resistance at 0.019 Ω and operates up to 175 °C. This compact FET is suitable for high-efficiency power management.
SUM52N20-39P-E3
Vishay Intertechnology
Vishay Intertechnology's SUM52N20-39P-E3 is a N-channel FET with 200V DS breakdown voltage, 100A pulsed drain current, and 0.094 ohm max on-resistance. Ideal for power applications requiring high current handling and low on-resistance in a compact small outline package.
31 mJ
200 V
52 A
.094 ohm
100 A
MATTE TIN OVER NICKEL
NTD4815NH-1G
NTD4815NH-1G by Onsemi is a N-channel power FET with 30V DS breakdown voltage and 87A pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode and 0.015 ohm max drain-source resistance.
35.6 mJ
8.5 A
6.9 A
32.6 W
87 A
NTD4815NH-35G
NTD4815NH-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 87A IDM, and 0.015 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and 35.6mJ EAS rating. With SILICON element material and TIN finish, it operates up to 175 °C.
STW30NF20
STW30NF20 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
140 mJ
30 A
.075 ohm
STW40NF20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; No. of Elements: 1; Maximum Drain-Source On Resistance: .045 ohm;
.045 ohm
160 W
SPB80N10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Peak Reflow Temperature (C): 245; Avalanche Energy Rating (EAS): 700 mJ;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.024 ohm
STD90N03L-1
STD90N03L-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 30 V. It offers low on-resistance at 0.0057 Ω and operates up to 175 °C. This versatile FET is packaged in a through-hole design for easy integration.
350 mJ
.0057 ohm
95 W
STD90N03L
STD90N03L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
STFV3N150
STFV3N150 from STMicroelectronics is an N-channel FET designed for switching applications, featuring a 1500V breakdown voltage and a max drain current of 2.5A. It operates in enhancement mode with a power dissipation of up to 30W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
450 mJ
1500 V
2.5 A
9 ohm
30 W
STN5PF02V
STN5PF02V by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 4.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact SO package ensures easy surface mounting in various electronic devices.
4.2 A
.1 ohm
R-PDSO-G4
4
2.5 W
STP9NM60N
STP9NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 26A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
115 mJ
6.5 A
.745 ohm
100 W
26 A
STSJ100NHS3LL
STSJ100NHS3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
1800 mJ
70 W
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