Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NVMFS5C442NLT3G
Onsemi
NVMFS5C442NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A ID, and 0.0037 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
265 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
130 A
.0037 ohm
METAL-OXIDE SEMICONDUCTOR
37 pF
R-PDSO-F5
e3
1
5
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
83 W
900 A
AEC-Q101
FET General Purpose Power
YES
Matte Tin (Sn) - annealed
FLAT
DUAL
30
SILICON
NVMFS5C442NLWFT1G
NVMFS5C442NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A Drain Current, and 0.0037 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance and high power dissipation of 83W in small outline package.
NVMFS5C442NLWFT3G
NVMFS5C442NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0037 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
STB80NF55-06-1
STMicroelectronics
STB80NF55-06-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient power management in various electronic circuits.
1300 mJ
55 V
80 A
.0065 ohm
TO-262AA
R-PSIP-T3
3
IN-LINE
210 W
320 A
Not Qualified
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
STB80NF55L-06T4
STB80NF55L-06T4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient performance in power management systems.
LOGIC LEVEL COMPATIBLE
.008 ohm
TO-263AB
R-PSSO-G2
2
GULL WING
STD10PF06T4
STD10PF06T4 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM and 125mJ EAS, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package style and Matte Tin finish, it offers high performance in various power management systems.
125 mJ
60 V
10 A
.2 ohm
TO-252AA
P-CHANNEL
40 W
40 A
Other Transistors
Matte Tin (Sn)
STW60NE10
STW60NE10 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, breakdown voltage of 100 V, and power dissipation up to 180 W. Ideal for high-performance power management in various electronic devices.
500 mJ
100 V
60 A
.022 ohm
TO-247AC
R-PSFM-T3
e0
FLANGE MOUNT
180 W
240 A
TIN LEAD
STB3N62K3
STB3N62K3 from STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 620V breakdown voltage, 10.8A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
100 mJ
620 V
2.7 A
2.5 ohm
150 Cel
245
45 W
10.8 A
STP3N62K3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Terminal Position: SINGLE; Terminal Finish: MATTE TIN;
TO-220AB
FQPF9N15
Fairchild Semiconductor
FQPF9N15 by Fairchild Semiconductor is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 27.6A Max Pulsed Drain Current, 80mJ Avalanche Energy Rating, and 0.4 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W at 175°C.
80 mJ
ISOLATED
150 V
6.9 A
.4 ohm
44 W
27.6 A
IXFR24N50Q
IXYS Corporation
IXYS Corporation's IXFR24N50Q is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 96A max pulsed drain current, 0.23 ohm max on-resistance, and 150°C max operating temperature. The transistor has a single configuration with built-in diode in a plastic/epoxy package suitable for high-power operations.
AVALANCHE RATED
1500 mJ
500 V
22 A
.23 ohm
NOT SPECIFIED
250 W
96 A
SPB80N03S2-03
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
810 mJ
30 V
.0031 ohm
220
300 W
SPB80N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.0035 ohm
SPB80N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 80 A;
.0034 ohm
SPB80N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Additional Features: AVALANCHE RATED; Operating Mode: ENHANCEMENT MODE;
.0048 ohm
SPB80N06S2-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 215 W; Minimum DS Breakdown Voltage: 55 V; Operating Mode: ENHANCEMENT MODE;
450 mJ
215 W
SPB80N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (Abs) (ID): 80 A;
800 mJ
.0057 ohm
SPB80N06S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 210 W; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified;
.01 ohm
SPB80N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
75 V
.0071 ohm
SPB80N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AB; Minimum DS Breakdown Voltage: 75 V;
.0087 ohm
SPP80N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
SPP80N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
.0038 ohm
SPP80N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 80 A; Transistor Element Material: SILICON;
SPP80N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB;
.0051 ohm
SPP80N06S2-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; JESD-30 Code: R-PSFM-T3; Additional Features: AVALANCHE RATED;
SPP80N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
.006 ohm
SPP80N06S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Avalanche Energy Rating (EAS): 450 mJ; JESD-609 Code: e3;
SPP80N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Maximum Drain Current (ID): 80 A;
.0074 ohm
NOT APPLICABLE
SPP80N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON;
.009 ohm
STB80NF03L-04-1
STB80NF03L-04-1 by STMicroelectronics is a N-channel Power FET with 30V DS breakdown voltage, 320A IDM, and 0.0055 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 300W and can handle up to 80A drain current.
2300 mJ
.0055 ohm
STD7NS20T4
STD7NS20T4 by STMicroelectronics is an N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 28A Max Pulsed Drain Current, and 0.4 ohm Max Drain-Source On Resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150 °C.
60 mJ
200 V
7 A
28 A
STB40NF10T4
STB40NF10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 200A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
150 mJ
50 A
.028 ohm
150 W
200 A
STB70NF03LT4
STB70NF03LT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 70A Drain Current, and 0.0095 ohm On Resistance. Ideal for SWITCHING applications, it features a 280A Pulsed Drain Current and 175 °C Max Operating Temp in a PLASTIC/EPOXY package.
70 A
.0095 ohm
100 W
280 A
STB70NF3LLT4
STB70NF3LLT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 280A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications due to its 100W Pdiss, ENHANCEMENT MODE operation, and built-in DIODE. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount.
STD17NF03L-1
STD17NF03L-1 by STMicroelectronics is a N-channel Power FET with 30V DS Breakdown Voltage and 68A IDM. Ideal for switching applications, it features a built-in diode, 0.06 ohm RDS(on), and 20W Pdiss. Suitable for enhancement mode operation in various electronic devices.
200 mJ
17 A
.06 ohm
TO-251AA
20 W
68 A
STD40NF3LLT4
STD40NF3LLT4 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 160A Pulsed Drain Current, and 55W Power Dissipation in a RECTANGULAR package.
850 mJ
.011 ohm
55 W
160 A
IRLML5203
International Rectifier
IRLML5203 by International Rectifier is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features 24A IDM and 0.098 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a PLASTIC/EPOXY body, GULL WING terminals, and built-in DIODE.
3 A
.098 ohm
R-PDSO-G3
1.25 W
24 A
NTMFS4936NT1G
NTMFS4936NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 235A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.0055 ohm RDS(on), and 96.8mJ EAS rating. Operating in ENHANCEMENT MODE, this MOSFET has a max power dissipation of 43W and can handle up to 11.6A ID current.
96.8 mJ
79 A
11.6 A
R-XDSO-F5
UNSPECIFIED
43 W
235 A
NTMFS4937NT1G
NTMFS4937NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 210A IDM, and 0.007 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, 43W power dissipation, and operates in ENHANCEMENT MODE. Suitable for high-power electronics requiring efficient switching capabilities.
68.5 mJ
17.1 A
10.2 A
.007 ohm
210 A
NTMFS4937NT3G
NTMFS4937NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 210A IDM, and 0.007 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
TIN
NTMFS4939NT1G
NTMFS4939NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 159A IDM. Ideal for SWITCHING applications, it features 0.008 ohm RDS(ON) and 48mJ EAS rating.
48 mJ
53 A
9.3 A
30 W
159 A
NTMFS4939NT3G
NTMFS4939NT3G by Onsemi is an N-CHANNEL FET with a 30V DS Breakdown Voltage and 159A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.008 ohm RDS(on), and operates in ENHANCEMENT MODE.
Tin (Sn)
NTMFS4943NT3G
NTMFS4943NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 125A IDM and 0.011 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR package with DUAL terminals is designed for high-power efficiency in various electronic systems.
31 mJ
8.3 A
125 A
NTMFS4945NT1G
NTMFS4945NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.013 ohm RDS(ON). Ideal for SWITCHING applications, it has 104A IDM and 26.5mJ EAS ratings. This SINGLE FET in SMALL OUTLINE package features ENHANCEMENT MODE operation and DUAL terminal position with built-in DIODE.
26.5 mJ
7.4 A
.013 ohm
104 A
STB4N62K3
STB4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 15.2A IDM, and 70W Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C, featuring a built-in DIODE and GULL WING terminals.
3.8 A
1.95 ohm
70 W
15.2 A
STF4N62K3
STF4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 15.2A Max Pulsed Drain Current and 25W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
25 W
STI4N62K3
STI4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS breakdown voltage, ideal for switching applications. It features 15.2A max pulsed drain current and 70W power dissipation, operating in enhancement mode at up to 150 °C.
STL12N65M5
STL12N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 7.2A Max Pulsed Drain Current and 150mJ Avalanche Energy Rating, operating in ENHANCEMENT MODE at up to 150 °C.
650 V
8.5 A
1.8 A
.43 ohm
S-PSSO-N4
4
SQUARE
7.2 A
NO LEAD
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