Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPP50N10S3L16AKSA1
Infineon Technologies
IPP50N10S3L16AKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 200A Max IDM and 0.0209 ohm Max RDS(on). Widely used in automotive applications due to AEC-Q101 standard compliance and 330mJ EAS rating for robust performance.
330 mJ
SINGLE WITH BUILT-IN DIODE
100 V
50 A
.0209 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
200 A
AEC-Q101
NO
TIN
THROUGH-HOLE
SINGLE
SILICON
IPP70N04S307AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
145 mJ
DRAIN
40 V
82 A
.006 ohm
130 pF
TO-252
R-PSSO-G2
2
175 Cel
-55 Cel
SMALL OUTLINE
79 W
280 A
YES
GULL WING
IPP70N10S312AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
410 mJ
70 A
.0116 ohm
IPP80N03S4L04AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; No. of Terminals: 3; JEDEC-95 Code: TO-220AB;
ULTRA LOW RESISTANCE
95 mJ
30 V
80 A
.0037 ohm
NOT SPECIFIED
320 A
IPP80N04S204AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 810 mJ; Package Shape: RECTANGULAR; No. of Terminals: 3;
AVALANCHE RATED
810 mJ
IPP80N04S2H4AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; No. of Elements: 1; JEDEC-95 Code: TO-220AB;
660 mJ
.004 ohm
IPP80N04S3H4AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY;
370 mJ
.0048 ohm
IPP80N06S205AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 80 A; Avalanche Energy Rating (EAS): 810 mJ;
ULTRA-LOW RESISTANCE
ISOLATED
55 V
.0051 ohm
IPP80N06S208AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 80 A;
450 mJ
.008 ohm
IPP80N06S209AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Transistor Element Material: SILICON;
.0091 ohm
IPP80N06S2LH5AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3;
LOGIC LEVEL COMPATIBLE
700 mJ
.0065 ohm
IPP80N06S405AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; JEDEC-95 Code: TO-220AB; Minimum DS Breakdown Voltage: 60 V;
152 mJ
60 V
.0057 ohm
IPP80N06S407AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
71 mJ
.0071 ohm
IPP80N06S4L05AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
IPP80N08S207AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 810 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
75 V
.0074 ohm
IPP80N08S2L07AKSA1
IPP80N08S2L07AKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 75V DS Breakdown Voltage, 320A IDM, and 0.0071 ohm RDS(on). It is commonly used in automotive applications due to its AEC-Q101 reference standard.
590 pF
300 W
IPP80P03P4L04AKSA1
IPP80P03P4L04AKSA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.007 ohm RDS(on). Ideal for power applications due to its high current handling capability and low on-resistance. Suitable for use in various electronic devices requiring efficient power management.
.007 ohm
P-CHANNEL
IPP80P03P4L07AKSA1
IPP80P03P4L07AKSA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage and 320A IDM. Ideal for SWITCHING applications, it features 0.0072 ohm RDS(ON) and 135mJ EAS rating. The METAL-OXIDE SEMICONDUCTOR technology ensures high performance in ENHANCEMENT MODE operation.
135 mJ
.0072 ohm
SWITCHING
IPP90N06S404AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Terminal Position: SINGLE; JEDEC-95 Code: TO-220AB;
331 mJ
90 A
360 A
IPP90N06S4L04AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .0034 ohm; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;
.0034 ohm
CSD19531KCS
Texas Instruments
CSD19531KCS by Texas Instruments is a N-CHANNEL power FET with a min DS breakdown voltage of 100V. It is designed for switching applications and has a max pulsed drain current of 285A.
180 mJ
100 A
.0088 ohm
17 pF
TO-220
179 W
285 A
FET General Purpose Power
MATTE TIN
IPB65R225C7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 48 mJ; JESD-609 Code: e3;
48 mJ
650 V
11 A
.225 ohm
41 A
IPI126N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 232 A; Terminal Form: THROUGH-HOLE;
70 mJ
58 A
.0126 ohm
TO-262AA
R-PSIP-T3
IN-LINE
232 A
IPP60R600P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 18 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
133 mJ
600 V
.6 ohm
18 A
IPP65R045C7XKSA1
IPP65R045C7XKSA1 by Infineon Technologies is a N-CHANNEL FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max IDM of 212A and 0.045 ohm Drain-Source On Resistance. The transistor features a SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
249 mJ
46 A
.045 ohm
212 A
IPP90R1K0C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PSFM-T3;
97 mJ
900 V
5.7 A
1 ohm
12 A
IPW60R190P6FKSA1
IPW60R190P6FKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 0.19 ohm RDS(on), and 57A IDM. Ideal for switching applications, it features a built-in diode and operates in enhancement mode. The transistor's metal-oxide semiconductor technology ensures high performance in power electronics.
419 mJ
.19 ohm
TO-247
57 A
IPW65R019C7FKSA1
IPW65R019C7FKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 496A and 0.019 ohm RDS(on), making it ideal for SWITCHING applications. The transistor's METAL-OXIDE SEMICONDUCTOR technology and ENHANCEMENT MODE operation ensure efficient performance in various power electronics systems.
583 mJ
75 A
.019 ohm
496 A
IPZ65R045C7XKSA1
IPZ65R045C7XKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 212A and 0.045 ohm RDS(on), suitable for SWITCHING applications. The transistor has a SILICON element, operates in ENHANCEMENT MODE, and comes in a RECTANGULAR package with THROUGH-HOLE terminals.
R-PSFM-T4
4
SPD30N03S2L07GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 250 mJ; Operating Mode: ENHANCEMENT MODE;
250 mJ
30 A
.0098 ohm
120 A
SPD30N03S2L10GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-252; Terminal Finish: TIN;
150 mJ
.0146 ohm
SPD30N03S2L20GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 30 A;
.031 ohm
SPD50N03S207GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
.0073 ohm
TO-252AA
SPD50N03S2L06GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 250 mJ; Package Body Material: PLASTIC/EPOXY;
.0092 ohm
SPI07N65C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 21.9 A; Avalanche Energy Rating (EAS): 230 mJ;
230 mJ
7.3 A
.0006 ohm
21.9 A
BSF035NE2LQXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 22 A; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 25 V;
50 mJ
25 V
22 A
.0046 ohm
R-MBCC-N3
e4
METAL
CHIP CARRIER
276 A
SILVER NICKEL
NO LEAD
BOTTOM
IPL65R340CFDAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104.2 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
290 mJ
10.9 A
.34 ohm
S-PSSO-N4
2A
150 Cel
-40 Cel
SQUARE
104.2 W
32 A
FQD9N25TM_F080
Fairchild Semiconductor
FQD9N25TM_F080 by Fairchild Semiconductor is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 7.4A Max Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a 0.42 ohm Max RDS(on) and 29.6A IDM rating for high-performance requirements.
165 mJ
250 V
7.4 A
.42 ohm
TO-252AB
260
29.6 A
30
IPD30N03S2L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
IPB80N06S207ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 2; Reference Standard: AEC-Q101;
530 mJ
.0063 ohm
215 pF
TO-263AB
250 W
IPI80N06S207AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JEDEC-95 Code: TO-262AA; Package Style (Meter): IN-LINE;
.0066 ohm
SIR826ADP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR826ADP-T1-GE3 is a N-channel Power FET with 80V DS Breakdown Voltage and 100A IDM. Ideal for switching applications, it features 0.0059 ohm RDS(on) and 61mJ EAS rating. Suitable for surface mount, this MOSFET has a rectangular package shape with C bend terminals.
61 mJ
80 V
60 A
.0059 ohm
R-PDSO-C5
5
C BEND
DUAL
BMS3004-1E
Onsemi
BMS3004-1E by Onsemi is a P-channel Power FET with 75V DS breakdown voltage, 272A IDM, and 0.0114 ohm max RDS(on). Ideal for applications requiring high drain current handling capabilities in enhancement mode operation. Package style: Flange mount, terminal finish: Matte Tin, and isolated case connection.
380 mJ
68 A
.0114 ohm
272 A
IPP60R380P6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel; Moisture Sensitivity Level (MSL): 1;
210 mJ
10.6 A
.38 ohm
29 A
CSD19533KCS
CSD19533KCS by Texas Instruments is an N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 207A and EAS of 106mJ, making it suitable for high-power operations. With a low 0.0122 ohm RDS(on), this FET offers efficient performance in ENHANCEMENT MODE operation.
106 mJ
.0122 ohm
12.5 pF
188 W
207 A
STI34N65M5
STMicroelectronics
STI34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 112A max pulsed drain current and 0.11 ohm max drain-source resistance. This MOSFET operates in enhancement mode at up to 150 °C, making it suitable for high-power tasks.
510 mJ
28 A
.11 ohm
112 A
NTE2380
Nte Electronics
NTE2380 by Nte Electronics is a Power FET with 500V DS Breakdown Voltage, 10A IDM, and 75W Pd. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
500 V
2 A
2.5 A
3 ohm
75 W
10 A
Not Qualified
90 ns
100 ns
NTTFS4H05NTWG
NTTFS4H05NTWG by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a max pulsed drain current of 304A, avalanche energy rating of 84mJ, and max operating temperature of 150°C. This MOSFET has a drain-source on resistance of 0.0048 ohm and can handle a max drain current of 22.4A efficiently in various electronic circuits.
84 mJ
94 A
22.4 A
S-PDSO-F5
46.3 W
304 A
Matte Tin (Sn) - annealed
FLAT
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