Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSP296L6327HTSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 1.1 A; Case Connection: DRAIN;
LOGIC LEVEL COMPATIBLE
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
1.1 A
.7 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G4
e3
1
4
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
4.4 A
AEC-Q101
YES
MATTE TIN
GULL WING
DUAL
SILICON
BSP298H6327XUSA1
Infineon's BSP298H6327XUSA1 is a N-CHANNEL FET with 400V DS breakdown voltage, ideal for power applications. Featuring a built-in diode, it has 2A max pulsed drain current and 130mJ avalanche energy rating. This MOSFET in small outline package is suitable for automotive and industrial uses.
AVALANCHE RATED
130 mJ
400 V
.5 A
3 ohm
3
260
2 A
40
SIHB23N60E-GE3
Vishay Intertechnology
SIHB23N60E-GE3 by Vishay Intertechnology is a N-channel Power FET with 600V DS breakdown voltage, 23A max drain current, and 0.158 ohm max on-resistance. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode.
353 mJ
600 V
23 A
.158 ohm
TO-263AB
R-PSSO-G2
2
NOT SPECIFIED
63 A
SINGLE
SWITCHING
SIHB33N60ET1-GE3
SIHB33N60ET1-GE3 by Vishay Intertechnology is a power FET with N-channel polarity. It has a min DS breakdown voltage of 600V and can handle a max pulsed drain current of 88A. This transistor is commonly used for switching applications due to its high performance and small outline package style.
793 mJ
33 A
.099 ohm
88 A
NVMFS5830NLWFT1G
Onsemi
NVMFS5830NLWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 185A Max ID, and 0.0036 ohm RDS(ON). It's used in power applications due to its 158W Power Dissipation, 1012A IDM, and 361mJ EAS rating. Ideal for automotive industry with AEC-Q101 standard compliance.
361 mJ
40 V
185 A
.0036 ohm
R-PDSO-F5
5
175 Cel
158 W
1012 A
FET General Purpose Power
Matte Tin (Sn) - annealed
FLAT
30
NVMFS5830NLWFT3G
NVMFS5830NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max Drain Current, and 0.0036 ohm Max RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
TIN
NVMFS5834NLWFT1G
NVMFS5834NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
48 mJ
75 A
14 A
.0136 ohm
107 W
276 A
NVMFS5834NLWFT3G
NVMFS5834NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
Tin (Sn)
NVTFS5820NLWFTAG
NVTFS5820NLWFTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 247A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications meeting AEC-Q101 standards.
60 V
.0115 ohm
S-PDSO-F5
SQUARE
247 A
NVTFS5820NLWFTWG
NVTFS5820NLWFTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 0.0115 ohm RDS(on), and 247A IDM. Ideal for automotive applications due to AEC-Q101 compliance, it features an N-CHANNEL configuration with built-in diode in a small outline package.
R6004ENJTL
ROHM
ROHM R6004ENJTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 8A max pulsed drain current, 0.98 ohm max drain-source resistance, and 46mJ avalanche energy rating. Suitable for enhancement mode operation in surface mount configurations.
46 mJ
4 A
.98 ohm
e2
8 A
TIN COPPER
10
R6020ENZ1C9
ROHM R6020ENZ1C9 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 80A IDM, 0.13 ohm max RDS(on), and 636mJ EAS. Package style: FLANGE MOUNT, technology: MOSFET, material: SILICON.
636 mJ
30 A
.13 ohm
TO-247
R-PSFM-T3
FLANGE MOUNT
80 A
NO
THROUGH-HOLE
RDD023N50TL
ROHM RDD023N50TL is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 8A max pulsed drain current and 5.5 ohm max drain-source resistance. The transistor operates in enhancement mode and has a built-in diode, suitable for surface mount configurations.
21 mJ
500 V
5.5 ohm
IPD60R600P6
Infineon's IPD60R600P6 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 18A IDM, 0.6 ohm RDS(on), and 133mJ EAS rating. Its GULL WING terminals and ENHANCEMENT MODE operation make it suitable for surface mount designs.
133 mJ
7.3 A
.6 ohm
TO-252
18 A
SIR670DP-T1-GE3
Vishay Intertechnology's SIR670DP-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage and 200A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0048 ohm max RDS(on), and 31.2mJ EAS rating in a small outline package.
31.2 mJ
60 A
.0048 ohm
R-PDSO-C5
200 A
C BEND
STF10P6F6
STMicroelectronics
STF10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.16 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
80 mJ
7.2 A
.16 ohm
TO-251
R-PSIP-T3
IN-LINE
P-CHANNEL
40 A
STU10P6F6
STU10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.116 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
10 A
.116 ohm
35 W
SIS488DN-T1-GE3
Vishay Intertechnology's SIS488DN-T1-GE3 is a N-channel Power FET with 40V DS breakdown voltage and 100A IDM. Ideal for switching applications, it features a built-in diode, 0.0055 ohm RDS(on), and 20mJ EAS rating. The small outline package with C bend terminals makes it suitable for surface mount designs.
20 mJ
.0055 ohm
S-PDSO-C5
100 A
STP9N60M2
STP9N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 22A IDM and 105mJ EAS, operating in enhancement mode. With 0.78 ohm RDS(on) and 60W power dissipation, it's suitable for high-power circuits requiring efficient performance.
105 mJ
5.5 A
.78 ohm
.68 pF
TO-220AB
150 Cel
-55 Cel
60 W
22 A
NVD5414NT4G
NVD5414NT4G by Onsemi is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 75A IDM, and 0.037 ohm RDS(on). Suitable for automotive (AEC-Q101) and industrial use with 175 °C max operating temp.
86.4 mJ
24 A
.037 ohm
55 W
ATP301-TL-H
The Onsemi ATP301-TL-H is a P-CHANNEL FET with 100V DS breakdown voltage, 112A IDM, and 0.075 ohm RDS(on). Ideal for power applications requiring high drain current handling. Suitable for surface mount designs due to its small outline package style.
54 mJ
28 A
.075 ohm
e6
70 W
112 A
Other Transistors
TIN BISMUTH
STB18NM60ND
STB18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 52A IDM, and 0.29 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 130W power dissipation.
187 mJ
13 A
.29 ohm
130 W
52 A
STF18NM60ND
STF18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 187mJ EAS, and 0.29 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 30W and can handle up to 150 °C.
ISOLATED
30 W
STI33N60M2
STI33N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 104A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 190W, -50 to 150 °C operating temperature range, and 0.125 ohm Drain-Source On Resistance.
450 mJ
26 A
.125 ohm
2.5 pF
-50 Cel
190 W
104 A
STI6N80K5
STI6N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 18A IDM, 85mJ EAS, and 1.6Ω RDS(ON). The transistor operates in ENHANCEMENT MODE with SILICON element material and DRAIN case connection.
85 mJ
800 V
4.5 A
1.6 ohm
STL105NS3LLH7
STL105NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 420A IDM, 0.0055 ohm RDS(on), and 62.5W Power Dissipation in a SMALL OUTLINE package suitable for ENHANCEMENT MODE operation at -55 to 150 °C.
BULK: 3000
30 V
105 A
42 pF
62.5 W
420 A
STL110NS3LLH7
STL110NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 480A IDM, 0.005 ohm RDS(on), and -55 °C Min Operating Temp. Its SINGLE configuration with BUILT-IN DIODE and DUAL Terminal Position make it suitable for various power management needs.
120 A
.005 ohm
480 A
STP13NM60ND
STP13NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 44A IDM, 162mJ EAS, and 0.38ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and SILICON element material.
162 mJ
11 A
.38 ohm
44 A
STP18NM60ND
STP18NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 187mJ EAS, and 0.29 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 130W at 150 °C.
STP6N80K5
STP6N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, 18A IDM, and 1.6Ω RDS(on). It is used for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE in a RECTANGULAR package.
STU10N60M2
STU10N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 30A max pulsed drain current and 0.6 ohm max drain-source on resistance. Operating in enhancement mode, it has a power dissipation of 85W and can withstand temperatures from -55 to 150 °C.
110 mJ
7.5 A
85 W
Matte Tin (Sn)
STW18NM60ND
STW18NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.29 ohm Drain-Source On Resistance, and 150 °C Max Operating Temp.
STB28N60M2
STB28N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 88A IDM, and 0.15 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 170W.
350 mJ
.15 ohm
170 W
STDLED524
STDLED524 by STMicroelectronics is a N-CHANNEL Power FET with 525V DS Breakdown Voltage and 14A Pulsed Drain Current. Ideal for applications requiring high power dissipation, such as in industrial automation systems or LED lighting solutions.
525 V
2.6 ohm
45 W
STF25N10F7
STF25N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 76A IDM, and 0.035 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
19 A
.035 ohm
19 pF
25 W
76 A
STFILED524
STFILED524 by STMicroelectronics is a N-CHANNEL Power FET with 525V DS Breakdown Voltage. It features 14A IDM, 110mJ EAS, and 20W Max Power Dissipation. Ideal for applications requiring high voltage tolerance and efficient power management in various electronic circuits.
TO-281
20 W
STH140N6F7-2
STH140N6F7-2 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage, 320A IDM, and 0.0032 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and can handle up to 175 °C operating temperature.
BULK: 1000
.0032 ohm
193 pF
320 A
STL23NS3LLH7
STL23NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 368A IDM, and 0.005 ohm RDS(on). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. RECTANGULAR package style with DUAL terminals and built-in DIODE.
92 A
368 A
STL4P2UH7
STL4P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage, 16A IDM, and 0.18 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, operating at up to 150 °C.
20 V
.18 ohm
S-PDSO-F6
6
16 A
STP25N10F7
STP25N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, 25A ID, and 0.035 ohm RDS(on). It's used for switching applications in enhancement mode with 100A IDM. Operating temp ranges from -55 to 175 °C.
25 A
50 W
STPLED524
STPLED524 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 14A IDM, and 110mJ EAS. It is used in power applications requiring high voltage tolerance and current handling capabilities.
STT3P2UH7
STT3P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage, 12A IDM, and 0.18 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features GULL WING terminals, operates at -55 °C to support various electronic devices.
3 A
R-PDSO-G6
12 A
STU6N60M2
STU6N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 18A IDM and 86mJ EAS, operating in enhancement mode. With a max power dissipation of 60W and -55 to 150 °C operating temperature range, it offers reliable performance in various industrial settings.
86 mJ
1.2 ohm
.7 pF
STULED524
STULED524 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 14A IDM, and 110mJ EAS. Ideal for power applications requiring high voltage tolerance and current handling in industrial settings.
STW28N60M2
STW28N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 88A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 170W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
STW40N60M2
STW40N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 136A IDM, 0.088 ohm RDS(on), and 500mJ EAS rating. The transistor operates in ENHANCEMENT MODE with SINGLE configuration and BUILT-IN DIODE, suitable for high-power switching circuits.
500 mJ
34 A
.088 ohm
136 A
SMP3003-TL-1E
SMP3003-TL-1E by Onsemi is a P-CHANNEL FET with 75V DS Breakdown Voltage, 400A IDM, and 0.011 ohm RDS(ON). Ideal for power applications due to its EAS of 468mJ, ENHANCEMENT MODE operation, and DRAIN case connection.
468 mJ
75 V
.011 ohm
245
400 A
BBS3002-TL-1E
BBS3002-TL-1E by Onsemi is a P-channel Power FET with 60V DS breakdown voltage, 400A IDM, and 0.009 ohm max RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for use in enhancement mode operation at up to 150°C operating temperature.
340 mJ
.009 ohm
950 pF
90 W
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