Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPB65R099C6ATMA1
Infineon Technologies
IPB65R099C6ATMA1 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, 0.099 ohm RDS(on), and 115A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an EAS of 845 mJ.
845 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
650 V
.099 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
115 A
YES
TIN
GULL WING
SINGLE
SWITCHING
SILICON
IPI65R099C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Package Shape: RECTANGULAR;
TO-262AA
R-PSIP-T3
3
IN-LINE
NOT SPECIFIED
NO
THROUGH-HOLE
IPP65R099C6XKSA1
Infineon Technologies' IPP65R099C6XKSA1 is a power FET with a min DS breakdown voltage of 650V. It has a max pulsed drain current of 115A and an avalanche energy rating of 845mJ. This N-channel transistor is commonly used for switching applications.
TO-220AB
R-PSFM-T3
FLANGE MOUNT
IPW65R099C6FKSA1
IPW65R099C6FKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 0.099 ohm RDS(ON). It is used for SWITCHING applications, featuring 115A IDM and 845mJ EAS. The transistor has a SINGLE configuration with BUILT-IN DIODE, RECTANGULAR package shape, and THROUGH-HOLE terminals.
TO-247
IPI60R199CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
436 mJ
600 V
16 A
.199 ohm
150 Cel
51 A
Not Qualified
IPP60R074C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Transistor Application: SWITCHING; JEDEC-95 Code: TO-220AB;
923 mJ
.074 ohm
151 A
IPP65R074C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 915 mJ; No. of Elements: 1; Maximum Drain-Source On Resistance: .074 ohm;
915 mJ
IPW65R037C6FKSA1
Infineon's IPW65R037C6FKSA1 is a 650V N-CHANNEL FET with 0.037 ohm RDS(on) and 297A IDM. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation and an EAS of 2185 mJ. The PLASTIC/EPOXY package with THROUGH-HOLE terminals makes it suitable for high-power RECTANGULAR FLANGE MOUNT designs.
2185 mJ
.037 ohm
297 A
SPP15P10PHXKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JESD-609 Code: e3; JEDEC-95 Code: TO-220AB;
AVALANCHE RATED
230 mJ
100 V
15 A
.24 ohm
P-CHANNEL
60 A
IPA60R520CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Case Connection: ISOLATED; Maximum Pulsed Drain Current (IDM): 17 A;
166 mJ
ISOLATED
6.8 A
.52 ohm
17 A
IPI90R340C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
678 mJ
900 V
.34 ohm
175 Cel
34 A
IPI60R250CPAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE;
345 mJ
12 A
.25 ohm
40 A
IPI60R520CPAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 166 mJ; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY;
IPW60R199CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Operating Mode: ENHANCEMENT MODE;
BSB280N15NZ3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Maximum Drain Current (Abs) (ID): 30 A; Operating Mode: ENHANCEMENT MODE;
120 mJ
150 V
30 A
9 A
.028 ohm
R-MBCC-N3
e4
METAL
CHIP CARRIER
57 W
120 A
FET General Purpose Powers
SILVER NICKEL
NO LEAD
BOTTOM
SPA20N60CFDXKSA1
SPA20N60CFDXKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 52A max pulsed drain current, 0.22 ohm max drain-source resistance, and 150°C max operating temperature. Perfect for power electronics in various industries.
690 mJ
20.7 A
.22 ohm
52 A
BSL207SPL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
44 mJ
20 V
6 A
.041 ohm
R-PDSO-G6
6
24 A
AEC-Q101
DUAL
BSL211SPL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
26 mJ
4.7 A
.067 ohm
18.8 A
IPA65R420CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;
227 mJ
8.7 A
.42 ohm
27 A
Tin (Sn)
IPB65R420CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.7 A; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
IPI65R420CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: SINGLE;
IPW65R420CFDFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE;
IPU60R600C6BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): IN-LINE; Transistor Element Material: SILICON;
133 mJ
.6 ohm
TO-251AA
19 A
IPU60R950C6BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: SINGLE; JESD-30 Code: R-PSIP-T3;
46 mJ
.95 ohm
IPW65R041CFDFKSA1
IPW65R041CFDFKSA1 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage and 255A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.041 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 500W at temperatures ranging from -55 to 150 °C.
68.5 A
-55 Cel
500 W
255 A
BSB028N06NN3GXUMA1
Infineon's BSB028N06NN3GXUMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 360A IDM and 0.0028 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C. With SILICON element material and METAL-OXIDE SEMICONDUCTOR technology, this FET offers high performance in a CHIP CARRIER package.
590 mJ
60 V
90 A
22 A
.0028 ohm
78 W
360 A
FET General Purpose Power
IPP50R350CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Operating Temperature: 150 Cel; Avalanche Energy Rating (EAS): 246 mJ;
246 mJ
500 V
10 A
.35 ohm
BSC0901NSIATMA1
Infineon's BSC0901NSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and 0.0026 ohm RDS(ON), making it suitable for high-power operations. With a compact SMALL OUTLINE package and DUAL terminal position, it offers efficient performance in various electronic devices.
45 mJ
30 V
28 A
.0026 ohm
R-PDSO-F8
8
400 A
FLAT
IPS031N03LGAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .004 ohm; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
60 mJ
.004 ohm
TO-251
IPW65R048CFDAFKSA1
IPW65R048CFDAFKSA1 by Infineon is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 228A and 0.048 ohm RDS(ON), suitable for SWITCHING applications. This FLANGE MOUNT transistor in PLASTIC/EPOXY package is ideal for ENHANCEMENT MODE operation in automotive systems, meeting AEC-Q101 standards.
HIGH RELIABILITY
1943 mJ
63.3 A
.048 ohm
228 A
IPW65R080CFDAFKSA1
Infineon's IPW65R080CFDAFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, 0.08 ohm RDS(on), and 137A IDM. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has an EAS of 1160 mJ. AEC-Q101 compliant, this transistor is designed for high-power requirements in automotive and industrial sectors.
1160 mJ
43.3 A
.08 ohm
137 A
IPW65R110CFDAFKSA1
Infineon's IPW65R110CFDAFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 0.11 ohm Drain-Source On Resistance and 99.6A Pulsed Drain Current, it ensures efficient power management in ENHANCEMENT MODE operation. This FLANGE MOUNT transistor with SILICON element material is AEC-Q101 compliant for automotive use.
31.2 A
.11 ohm
99.6 A
IPP65R310CFDAAKSA1
IPP65R310CFDAAKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It has a max IDM of 34.4A and 0.31 ohm RDS(on), suitable for enhancement mode operation. The transistor features a built-in diode, metal-oxide semiconductor technology, and AEC-Q101 compliance.
290 mJ
11.4 A
.31 ohm
34.4 A
IPP65R660CFDAAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 650 V; Terminal Finish: TIN;
115 mJ
.66 ohm
IPB90R340C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .34 ohm; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 900 V;
IPD65R1K4CFDBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28.4 W; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
2.8 A
1.4 ohm
TO-252
28.4 W
8.2 A
IPS65R1K4C6AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Package Style (Meter): IN-LINE; Package Body Material: PLASTIC/EPOXY;
3.2 A
28 W
8.3 A
IPS65R950C6AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 37 W; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 650 V;
50 mJ
4.5 A
37 W
BSP135L6327HTSA1
Infineon's BSP135L6327HTSA1 is a N-CHANNEL Power FET with 600V DS breakdown voltage. Ideal for power applications, it features a single configuration with built-in diode and operates in depletion mode. With a max drain current of 0.12A and on-resistance of 45 ohm, this MOSFET can handle up to 0.48A pulsed drain current efficiently at temperatures up to 150°C.
.12 A
45 ohm
R-PDSO-G4
4
DEPLETION MODE
.48 A
MATTE TIN
BSP149L6327HTSA1
Infineon's BSP149L6327HTSA1 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. Ideal for DEPLETION MODE operation, it offers 2.6A IDM and 1.8Ω RDS(on). With a DUAL terminal position and built-in diode, it suits applications requiring high drain current in small outline packages.
200 V
.66 A
1.8 ohm
2.6 A
BSL307SPL6327HTSA1
Infineon's BSL307SPL6327HTSA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 22A IDM, and 0.043 ohm RDS(on). Ideal for power management applications due to its small outline package, high drain current capacity, and low on-resistance. Operating in enhancement mode with a max temperature of 150°C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
5.5 A
.043 ohm
IPA65R660CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 650 V; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPB65R660CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 17 A;
IPD65R660CFDBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
IPI65R660CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1; No. of Terminals: 3;
IPP65R660CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Avalanche Energy Rating (EAS): 115 mJ; Terminal Form: THROUGH-HOLE;
Matte Tin (Sn)
IPW65R660CFDFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SPB08P06PGATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;
70 mJ
8.8 A
.3 ohm
35.2 A
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