Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPB260N06N3GATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Avalanche Energy Rating (EAS): 13 mJ; Package Style (Meter): SMALL OUTLINE;
13 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
27 A
.0257 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
108 A
Not Qualified
YES
GULL WING
SINGLE
SWITCHING
SILICON
IPP260N06N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 108 A;
.026 ohm
TO-220AB
R-PSFM-T3
e3
3
FLANGE MOUNT
NO
MATTE TIN
THROUGH-HOLE
IPW50R199CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
436 mJ
500 V
17 A
.199 ohm
TO-247
40 A
TIN
IPW50R250CPFKSA1
Infineon's IPW50R250CPFKSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 31A and 0.25 ohm RDS(on), it operates in enhancement mode at up to 175°C. The package style is flange mount with through-hole terminals, making it suitable for various power electronics designs.
345 mJ
13 A
.25 ohm
TO-247AD
31 A
IPW50R299CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
289 mJ
12 A
.299 ohm
26 A
IPW50R350CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 10 A; Transistor Element Material: SILICON;
246 mJ
10 A
.35 ohm
22 A
IPW60R075CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
1150 mJ
600 V
39 A
.075 ohm
130 A
IPW60R099CPFKSA1
IPW60R099CPFKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a max IDM of 93A and 0.099 ohm RDS(on). Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE and can handle up to 31A drain current at 150°C.
800 mJ
.099 ohm
150 Cel
93 A
IPW60R125CPFKSA1
IPW60R125CPFKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a single configuration with built-in diode, ideal for switching applications. With a max IDM of 82A and 0.125 ohm RDS(on), it operates in enhancement mode at up to 175°C, making it suitable for high-power requirements.
708 mJ
25 A
.125 ohm
82 A
IPW60R165CPFKSA1
IPW60R165CPFKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 61A and 0.165 ohm max drain-source resistance. This MOSFET operates in enhancement mode and has an operating temperature of up to 175°C.
522 mJ
21 A
.165 ohm
61 A
IPW60R299CPFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JEDEC-95 Code: TO-247; Terminal Form: THROUGH-HOLE;
290 mJ
11 A
34 A
IPW90R1K2C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; JEDEC-95 Code: TO-247; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
68 mJ
900 V
5.1 A
1.2 ohm
IPW90R340C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;
678 mJ
15 A
.34 ohm
SPW11N60CFDFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE; No. of Elements: 1;
AVALANCHE RATED
340 mJ
.44 ohm
28 A
SPW15N60CFDFKSA1
SPW15N60CFDFKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 33A and EAS of 460mJ, suitable for high-power operations. With a 0.33 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it reliable for various industrial uses.
460 mJ
13.4 A
.33 ohm
33 A
SPW20N60CFDFKSA1
SPW20N60CFDFKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 52A max pulsed drain current, 0.22 ohm max drain-source resistance, and 690mJ avalanche energy rating. Suitable for enhancement mode operation in high-power systems up to 150°C.
690 mJ
20.7 A
.22 ohm
52 A
SPW24N60CFDFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 55 A; Maximum Drain-Source On Resistance: .185 ohm; Avalanche Energy Rating (EAS): 780 mJ;
780 mJ
21.7 A
.185 ohm
55 A
SPW35N60CFDFKSA1
SPW35N60CFDFKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, 85A IDM, and 0.118 ohm RDS(on). Ideal for power applications due to its 1300 mJ EAS rating. Suitable for use in enhancement mode operations at up to 150°C.
AVALANCHE RATED, HIGH VOLTAGE
1300 mJ
34.1 A
.118 ohm
TO-247AA
85 A
SPW47N60CFDFKSA1
SPW47N60CFDFKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, 115A IDM, and 0.083 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in various electronic devices due to its robust design and high operating temperature of 150°C.
1800 mJ
46 A
.083 ohm
115 A
BSC0908NSATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 34 V; Case Connection: DRAIN; Package Shape: RECTANGULAR;
10 mJ
34 V
14 A
.0127 ohm
R-PDSO-F8
8
200 A
FLAT
DUAL
IPA65R110CFDXKSA1
Infineon's IPA65R110CFDXKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 99.6A IDM, 845mJ EAS, and 0.11 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 34.7W in a RECTANGULAR package with THROUGH-HOLE terminals.
845 mJ
ISOLATED
650 V
31.2 A
.11 ohm
-55 Cel
34.7 W
99.6 A
Tin (Sn)
IPB65R110CFDATMA1
IPB65R110CFDATMA1 by Infineon is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 99.6A and EAS of 845mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features 0.11 ohm RDS(ON) and can handle up to 31.2A drain current, making it ideal for high-power electronics.
IPI65R110CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 277.8 W; Maximum Drain Current (Abs) (ID): 31.2 A; Package Body Material: PLASTIC/EPOXY;
TO-262AA
R-PSIP-T3
IN-LINE
277.8 W
IPP65R110CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 277.8 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 31.2 A;
IPW65R110CFDFKSA1
IPW65R110CFDFKSA1 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 99.6A Pulsed Drain Current, 845mJ Avalanche Energy Rating, and 0.11 ohm On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 277.8W power dissipation efficiently at temperatures ranging from -55°C to 150°C.
IPS12CN10LGBKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; JESD-30 Code: R-PSIP-T3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
LOGIC LEVL COMPATIBLE
150 mJ
100 V
69 A
.0118 ohm
TO-251AA
276 A
IPB147N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
20 mJ
30 V
20 A
.0217 ohm
140 A
SPA02N80C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
90 mJ
800 V
2 A
2.7 ohm
6 A
SPA04N80C3XKSA1
Infineon's SPA04N80C3XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Features include 12A IDM, 170mJ EAS, and 1.3Ω RDS(on). With a max operating temp of 150°C, it suits various power control needs in industrial settings.
170 mJ
4 A
1.3 ohm
SPA11N80C3XKSA1
SPA11N80C3XKSA1 by Infineon is a N-CHANNEL FET with 800V DS breakdown voltage. Ideal for switching applications, it has 33A pulsed drain current and 0.45 ohm max on-resistance. Operating in enhancement mode, it features a built-in diode and can handle up to 150°C temperature.
470 mJ
.45 ohm
SPD06N80C3BTMA1
Infineon Technologies' SPD06N80C3BTMA1 is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 800V, making it suitable for switching applications. With a max pulsed drain current of 18A and low on-resistance of 0.9 ohm, it offers efficient performance in various electronic devices.
230 mJ
.9 ohm
TO-252AA
260
18 A
40
SPI08N80C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Package Style (Meter): IN-LINE; Package Body Material: PLASTIC/EPOXY;
8 A
.65 ohm
24 A
SPP02N80C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Position: SINGLE; Additional Features: AVALANCHE RATED, HIGH VOLTAGE;
SPP04N80C3XKSA1
Infineon's SPP04N80C3XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. It features 12A IDM, 170mJ EAS, and 1.3 ohm RDS(on). The transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power systems.
SPP18P06PHXKSA1
SPP18P06PHXKSA1 by Infineon is a P-CHANNEL FET with 60V DS Breakdown Voltage, 74.8A IDM, and 0.13 ohm RDS(on). It is used in power applications due to its 81.1W Power Dissipation, 151mJ EAS rating, and -55 to +175°C Operating Temperature range.
151 mJ
18.7 A
.13 ohm
P-CHANNEL
81.1 W
74.8 A
Other Transistors
SPA17N80C3XKSA1
Infineon's SPA17N80C3XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Features include 17A max drain current, 0.29 ohm max on resistance, and 51A pulsed drain current. Suitable for enhancement mode operation in various power electronics systems.
670 mJ
.29 ohm
51 A
IPB65R280E6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSSO-G2; Moisture Sensitivity Level (MSL): 1;
.28 ohm
IPD50R399CPBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN; Avalanche Energy Rating (EAS): 215 mJ;
215 mJ
9 A
.399 ohm
IPI60R099CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 800 mJ; Maximum Drain Current (ID): 31 A; Transistor Element Material: SILICON;
IPA65R380E6XKSA1
Infineon's IPA65R380E6XKSA1 is a N-CHANNEL FET with 650V DS breakdown voltage, 0.38 ohm RDS(on), and 29A IDM. Ideal for switching applications, it operates in enhancement mode with a max temperature of 150°C. The transistor features a built-in diode and offers an EAS of 215mJ for robust performance.
.38 ohm
29 A
IPD65R380E6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .38 ohm; Avalanche Energy Rating (EAS): 215 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP65R380E6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Avalanche Energy Rating (EAS): 215 mJ; Maximum Operating Temperature: 150 Cel;
IPW65R080CFDFKSA1
Infineon's IPW65R080CFDFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 137A IDM and 1160mJ EAS, it operates in ENHANCEMENT MODE with 0.08 ohm RDS(ON). With a max power dissipation of 391W and temp range of -55 to 150 °C, it's suitable for high-power systems.
1160 mJ
43.3 A
.08 ohm
391 W
137 A
BSB008NE2LXXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Maximum Drain-Source On Resistance: .0008 ohm; Package Shape: RECTANGULAR;
ULTRA LOW RESISTANCE
600 mJ
25 V
180 A
.0008 ohm
R-MBCC-N3
e4
-40 Cel
METAL
CHIP CARRIER
89 W
400 A
SILVER NICKEL
NO LEAD
BOTTOM
BSC016N04LSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 295 mJ; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
295 mJ
40 V
100 A
.0023 ohm
BSF024N03LT3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Transistor Element Material: SILICON; Terminal Form: NO LEAD;
125 mJ
.0032 ohm
BSF030NE2LQXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; No. of Terminals: 2; JESD-30 Code: R-MBCC-N2;
50 mJ
75 A
.0041 ohm
R-MBCC-N2
28 W
300 A
BSF050N03LQ3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: BOTTOM;
.007 ohm
240 A
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