Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STL18N55M5
STMicroelectronics
STL18N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 9.6A Pulsed Drain Current, 200mJ Avalanche Energy Rating, and 0.24 ohm On Resistance. Suitable for high-power circuits requiring efficient switching capabilities in a compact SQUARE package.
200 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
550 V
13 A
2.4 A
.24 ohm
METAL-OXIDE SEMICONDUCTOR
S-PSSO-N4
e3
3
1
4
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
N-CHANNEL
90 W
9.6 A
Not Qualified
FET General Purpose Power
YES
MATTE TIN
NO LEAD
SINGLE
30
SWITCHING
SILICON
STL60N3LLH5
STL60N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 68A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 60W.
120 mJ
30 V
60 A
17 A
.0095 ohm
R-PDSO-N5
5
RECTANGULAR
60 W
68 A
DUAL
STL75N3LLZH5
STL75N3LLZH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS breakdown voltage, 76A IDM, and 0.0078 ohm RDS(on). Ideal for SWITCHING applications due to its 60W power dissipation, ENHANCEMENT MODE operation, and DUAL terminal position.
75 A
19 A
.0078 ohm
NOT SPECIFIED
76 A
STP260N6F6
STP260N6F6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Drain Current, 0.003 ohm On Resistance, and 300W Power Dissipation in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it has a max temperature of 175 °C and is suitable for high-power electronic systems.
60 V
120 A
.003 ohm
TO-220AB
R-PSFM-T3
175 Cel
FLANGE MOUNT
300 W
480 A
NO
THROUGH-HOLE
STP4N62K3
STP4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 15.2A Max Pulsed Drain Current and 70W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
620 V
3.8 A
1.95 ohm
70 W
15.2 A
STQ3N45K3-AP
STQ3N45K3-AP by STMicroelectronics is a N-CHANNEL FET with 450V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.4A Max Pulsed Drain Current and 3.8 ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150 °C.
450 V
.6 A
3.8 ohm
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
2.5 W
BOTTOM
STU3N45K3
STU3N45K3 by STMicroelectronics is a N-CHANNEL FET with 450V DS Breakdown Voltage, suitable for SWITCHING applications. It features 7.2A Max Pulsed Drain Current and 27W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
1.8 A
TO-251
R-PSIP-T3
IN-LINE
27 W
7.2 A
SPD30N06S2-15
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;
AVALANCHE RATED
240 mJ
55 V
30 A
.0147 ohm
TO-252
R-PSSO-G2
e0
2
125 W
TIN LEAD
GULL WING
SPD30N06S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: TIN LEAD; Package Shape: RECTANGULAR;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.017 ohm
SPD30N06S2L-23
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; JESD-609 Code: e0; JESD-30 Code: R-PSSO-G2;
150 mJ
.03 ohm
80 W
SPD30N08S2-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 120 A; Maximum Drain-Source On Resistance: .0215 ohm;
75 V
.0215 ohm
SPD30N08S2L-21
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PSSO-G2;
.026 ohm
SPD04N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Drain Current (Abs) (ID): 4.5 A; Transistor Application: SWITCHING;
AVALANCHE RATED, HIGH VOLTAGE
130 mJ
600 V
4.5 A
.95 ohm
TO-252AA
50 W
9 A
TIN
SPD07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 600 V;
230 mJ
7.3 A
.6 ohm
-55 Cel
83 W
14.6 A
SPD09P06PL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
70 mJ
9.7 A
.25 ohm
P-CHANNEL
42 W
38.8 A
Other Transistors
SPD30P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain-Source On Resistance: .075 ohm; Qualification: Not Qualified;
250 mJ
.075 ohm
SPU07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Position: SINGLE; Maximum Drain Current (ID): 7.3 A;
TO-251AA
SPU09P06PL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
SPU30P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 60 V;
STP22NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
22 A
.06 ohm
45 W
88 A
STP35NF10
STP35NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.035 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 100W.
300 mJ
100 V
35 A
40 A
.035 ohm
100 W
160 A
STP40NS15
STP40NS15 by STMicroelectronics is a N-CHANNEL FET with 150V DS Breakdown Voltage, 40A Max ID, and 0.052 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 160A IDM and 140W Pd.
500 mJ
150 V
.052 ohm
140 W
STL34N65M5
STL34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 510mJ EAS, and 0.12 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 150W at 150 °C.
510 mJ
650 V
22.5 A
.12 ohm
6.3 pF
150 W
90 A
STL9P2UH7
STL9P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage, 36A IDM, and 0.085 ohm RDS(on). It is used for SWITCHING applications in small outline packages with 5 terminals.
20 V
.085 ohm
188 pF
S-PDSO-F5
2.9 W
36 A
FLAT
STP315N10F7
STP315N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 720A IDM, and 0.0027 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at -55 to +150 °C.
1000 mJ
180 A
.0027 ohm
720 A
AEC-Q101
STT7P2UH7
STT7P2UH7 by STMicroelectronics is a P-CHANNEL FET with 20V DS Breakdown Voltage and 28A IDM. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.085 ohm Drain-Source On Resistance. The transistor has GULL WING terminals, operates at -55 °C, and comes in a SMALL OUTLINE package style.
7 A
R-PDSO-G6
6
28 A
STS9NF30L
STS9NF30L by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 36A IDM, and 0.035 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This 8-terminal transistor features GULL WING terminals and a SMALL OUTLINE package style.
R-PDSO-G8
e4
8
NICKEL PALLADIUM GOLD
40
NTMFS5C646NLT3G
Onsemi
NTMFS5C646NLT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 93A ID, and 0.0063 ohm RDS(ON). It operates in Enhancement Mode with 750A IDM and 185mJ EAS. Ideal for power management applications due to its high power dissipation of 79W and small outline package style.
185 mJ
93 A
.0063 ohm
R-PDSO-F5
79 W
750 A
Matte Tin (Sn) - annealed
IRFH5106TR2PBF
International Rectifier
IRFH5106TR2PBF by International Rectifier is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 96mJ, operating in ENHANCEMENT MODE at up to 150°C. This surface mount transistor has a Drain Current of 21A and 0.0056 ohm On Resistance.
96 mJ
100 A
21 A
.0056 ohm
114 W
400 A
STF16NK60Z
STF16NK60Z by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 56A IDM and 0.42 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor's package is RECTANGULAR with THROUGH-HOLE terminals, offering 40W Pdiss and EAS of 360mJ.
360 mJ
ISOLATED
14 A
.42 ohm
40 W
56 A
STP150N3LLH6
STP150N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 525mJ EAS, and 0.0049 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 110W at 175 °C.
525 mJ
80 A
.0049 ohm
110 W
320 A
AOD4N60
Alpha & Omega Semiconductor
AOD4N60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 14A max pulsed drain current, 235mJ avalanche energy rating, and 2.3ohm max drain-source resistance. Suitable for enhancement mode operation in high-power circuits.
235 mJ
4 A
2.3 ohm
104 W
NTE2395
Nte Electronics
NTE2395 by Nte Electronics is a Power FET with 60V DS Breakdown Voltage, 200A IDM, and 0.028 ohm RDS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
100 mJ
50 A
.028 ohm
200 A
DMJ7N70SK3-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.25 ohm; Terminal Position: SINGLE; JEDEC-95 Code: TO-252;
HIGH RELIABILITY
700 V
3.9 A
1.25 ohm
15.6 A
R5007FNX
ROHM
ROHM R5007FNX is a N-CHANNEL FET with 500V DS breakdown voltage, 28A IDM, and 1.3Ω max RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. The transistor's package style is flange mount with isolated case connection.
3.2 mJ
500 V
1.3 ohm
10
R6020FNJTL
ROHM R6020FNJTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 80A max pulsed drain current, 0.28 ohm max drain-source resistance, and 26.7mJ avalanche energy rating. Suitable for ENHANCEMENT MODE operation in various electronic devices requiring high power handling capabilities.
26.7 mJ
20 A
.28 ohm
FDB86363_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDB86363_F085 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. It has 110A Drain Current, 0.0024 ohm On Resistance, and 300W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
512 mJ
80 V
110 A
.0024 ohm
TO-263AB
STB11NM60-1
STB11NM60-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 44A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. The transistor has a max power dissipation of 110W and can withstand temperatures up to 150 °C.
350 mJ
11 A
.45 ohm
TO-262AA
44 A
Matte Tin (Sn)
STB20NM50-1
STB20NM50-1 by STMicroelectronics is a N-channel FET with 500V DS breakdown voltage, 80A IDM, and 0.25 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 110W power dissipation and 150 °C max temperature.
650 mJ
STB45NF06
STB45NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 38A Drain Current, and 0.028 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, with 152A Pulsed Drain Current capability.
260 mJ
38 A
152 A
STB80NF55-08T4
STB80NF55-08T4 by STMicroelectronics is a N-channel FET with 55V DS breakdown voltage, 80A max drain current, and 0.008 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. Suitable for surface mount assembly, it has a max power dissipation of 300W and can withstand temperatures up to 175 °C.
.008 ohm
245
STB80PF55T4
STB80PF55T4 by STMicroelectronics is a P-CHANNEL FET with 55V DS Breakdown Voltage, 80A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications due to its 320A Pulsed Drain Current and 1.4mJ Avalanche Energy Rating in a small outline package.
1.4 mJ
.018 ohm
STB85NF3LLT4
STB85NF3LLT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 85A Drain Current, and 0.0095 ohm On Resistance. Ideal for SWITCHING applications due to its 340A Pulsed Drain Current capability. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
85 A
340 A
STD4NS25T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
250 V
1.1 ohm
16 A
STD60NF3LLT4
STD60NF3LLT4 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 240A Pulsed Drain Current, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 100W and can withstand temperatures up to 175 °C.
700 mJ
.0105 ohm
240 A
STE110NS20FD
STE110NS20FD by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 200V DS Breakdown Voltage, 440A IDM, and 0.024 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 500W and can handle up to 150 °C temperature.
750 mJ
200 V
.024 ohm
R-XUFM-X4
UNSPECIFIED
500 W
440 A
NICKEL
UPPER
STE48NM50
STE48NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 192A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its 450W Pdiss, EAS of 810mJ, and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
810 mJ
48 A
.1 ohm
R-PUFM-X4
450 W
192 A
STE70NM50
STE70NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 70A Drain Current. Ideal for SWITCHING applications, it features a max Pulsed Drain Current of 280A and an Avalanche Energy Rating of 1400mJ. Operating in ENHANCEMENT MODE, this transistor has a 0.05 ohm On Resistance and can handle up to 460W power dissipation.
1400 mJ
70 A
.05 ohm
460 W
280 A
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