Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STW11NK90Z
STMicroelectronics
STW11NK90Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 900V breakdown voltage, 36.8A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
HIGH VOLTAGE
400 mJ
SINGLE WITH BUILT-IN DIODE
900 V
9.2 A
.98 ohm
METAL-OXIDE SEMICONDUCTOR
TO-247AC
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
200 W
36.8 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STI22NM60N
STI22NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 16A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
300 mJ
600 V
16 A
.22 ohm
TO-262AA
R-PSIP-T3
IN-LINE
125 W
64 A
IRF6645TR1PBF
International Rectifier
IRF6645TR1PBF by International Rectifier is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 45A IDM, and 0.035 ohm RDS(on). With a max power dissipation of 42W and operating temperature up to 150°C, it's ideal for high-power switching circuits.
29 mJ
DRAIN
100 V
5.7 A
.035 ohm
R-XBCC-N3
e1
UNSPECIFIED
CHIP CARRIER
260
42 W
45 A
FET General Purpose Powers
YES
TIN SILVER COPPER
NO LEAD
BOTTOM
30
NTMFS4837NHT3G
Onsemi
NTMFS4837NHT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include BUILT-IN DIODE, METAL-OXIDE SEMICONDUCTOR tech, and 144mJ EAS rating.
144 mJ
30 V
10.2 A
.008 ohm
R-PDSO-F6
6
SMALL OUTLINE
225 A
TIN
FLAT
DUAL
NTMFS4841NHT1G
NTMFS4841NHT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 177A IDM, and 0.0116 ohm RDS(on). Ideal for SWITCHING applications due to its 41.7W Power Dissipation, METAL-OXIDE SEMICONDUCTOR technology, and ENHANCEMENT MODE operation.
98 mJ
59 A
13.5 A
.0116 ohm
41.7 W
177 A
NTMFS4841NHT3G
NTMFS4841NHT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 177A, EAS of 98mJ, and ID of 59A. With 0.0116 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 150 °C.
STB60N55F3
STB60N55F3 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance with low on-resistance.
390 mJ
55 V
80 A
.0085 ohm
TO-263AB
R-PSSO-G2
2
175 Cel
245
110 W
320 A
Matte Tin (Sn) - annealed
GULL WING
STD60N55F3
STD60N55F3 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
TO-252
STF60N55F3
STF60N55F3 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 42 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-performance power management solutions.
42 A
TO-220AB
30 W
168 A
STP60N55F3
STP60N55F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
STP95N4F3
STP95N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 320A IDM, and 0.0062 ohm RDS(on). Ideal for SWITCHING applications due to its 110W Pdiss, 175°C Tmax, and EAS of 400mJ. Package style: FLANGE MOUNT with Matte Tin finish.
40 V
.0062 ohm
Matte Tin (Sn)
STU60N55F3
STU60N55F3 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
TO-251
STU95N4F3
STU95N4F3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
.065 ohm
STD7NM50N-1
STD7NM50N-1 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 500V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic circuits.
100 mJ
500 V
5 A
.78 ohm
TO-251AA
NOT SPECIFIED
45 W
20 A
STD7NM50N
STD7NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 20A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STD9NM50N-1
STD9NM50N-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 30A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
150 mJ
7.5 A
.56 ohm
70 W
30 A
STF19NF20
STF19NF20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 110mJ EAS, and 0.16 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 25W at 150°C.
110 mJ
200 V
15 A
.16 ohm
25 W
60 A
STF7NM50N
STF7NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
ISOLATED
20 W
STF9NM50N
STF9NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 7.5A. It operates in enhancement mode with a low on-resistance of 0.56Ω. Ideal for high-efficiency power management solutions.
STI270N4F3
STI270N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 120A ID, and 0.0026 ohm RDS. Ideal for SWITCHING applications due to its 480A IDM and 1000mJ EAS ratings. Operating in ENHANCEMENT MODE, it has a max power dissipation of 330W at 175°C.
1000 mJ
120 A
.0026 ohm
330 W
480 A
STP270N4F3
STP270N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0029 ohm RDS. It's used for SWITCHING applications due to its 175°C max temp, 1000 mJ EAS rating, and SINGLE configuration with BUILT-IN DIODE.
.0029 ohm
STP7NM50N
STP7NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 5A. It operates in enhancement mode with a power dissipation of up to 45W. Ideal for high-temperature environments, it supports efficient circuit designs.
STP9NM50N
STP9NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 30A pulsed drain current. It operates in enhancement mode with a max power dissipation of 70W. Its compact design suits various electronic circuits.
NTD20N06L-001
NTD20N06L-001 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A ID, and 0.048 ohm RDS(ON). It is an N-CHANNEL transistor for SWITCHING applications. The package style is IN-LINE with PLASTIC/EPOXY body material and METAL-OXIDE SEMICONDUCTOR technology.
128 mJ
60 V
.048 ohm
e0
235
TIN LEAD
NTMKE4892NT1G
NTMKE4892NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 210A IDM, and 0.0026 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, this chip carrier package features a built-in diode and operates in BOTTOM terminal position.
290 mJ
26 A
210 A
STB13NM50N-1
STB13NM50N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 12A max drain current. It offers a low on-resistance of 0.32Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
200 mJ
12 A
.32 ohm
100 W
48 A
STB13NM50N
STB13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 12A max drain current, and operates at up to 150 °C. This compact FET ensures efficient power management in various electronic devices.
STF13NM50N
STF13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 12A max drain current. It offers a low on-resistance of 0.32Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
STK822
STK822 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 152 A, a breakdown voltage of 25 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
ULTRA-LOW RESISTANCE
500 mJ
SOURCE
25 V
38 A
.003 ohm
R-XDSO-N4
4
5.2 W
152 A
STL6NM60N
STL6NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 23A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
65 mJ
1 A
.92 ohm
S-XQCC-N12
12
SQUARE
23 A
QUAD
STP13NM50N
STP13NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 12A max drain current, and operates at up to 150 °C. This versatile FET is suitable for high-power circuits with efficient thermal management.
STP2NK100Z
STP2NK100Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 1000V breakdown voltage and a max drain current of 2A. It operates in enhancement mode with a power dissipation of up to 70W. This versatile transistor ensures efficient performance in various electronic circuits.
AVALANCHE ENERGY RATED
170 mJ
1000 V
2 A
1.85 A
8.5 ohm
9 pF
-55 Cel
7.4 A
74 ns
13.7 ns
STP3NK100Z
STP3NK100Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 1000V breakdown voltage, 10A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
2.5 A
6 ohm
90 W
10 A
STP5N120
STP5N120 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a 1200V breakdown voltage, 4.7A max drain current, and operates at up to 150 °C. This versatile transistor is suitable for high-power circuits in various electronic devices.
1200 V
4.4 A
4.7 A
3.5 ohm
160 W
18.8 A
STW13NM50N
STW13NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 12A max drain current. It operates in enhancement mode with a power dissipation of up to 100W. Its compact design ensures efficient thermal management in various electronic circuits.
TO-247
e3/e1
MATTE TIN/TIN SILVER COPPER
FQB34N20TM_AM002
Fairchild Semiconductor
Fairchild Semiconductor's FQB34N20TM_AM002 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 124A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.075 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE.
640 mJ
31 A
.075 ohm
180 W
124 A
FQD5N60CTF
FQD5N60CTF by Fairchild Semiconductor is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 11.2A IDM, 210mJ EAS, and 49W Max Power Dissipation. Its PLASTIC/EPOXY package with GULL WING terminals makes it suitable for surface mount installations.
210 mJ
2.8 A
2.5 ohm
49 W
11.2 A
FQD6N50CTF
FQD6N50CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 300mJ EAS, and 1.2ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 61W at 150°C.
4.5 A
1.2 ohm
61 W
18 A
IRF630B_FP001
Fairchild Semiconductor's IRF630B_FP001 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.4 ohm RDS(on), and 72W Pdiss.
160 mJ
9 A
.4 ohm
72 W
36 A
STD6NM60N-1
STD6NM60N-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
4.6 A
18.4 A
STD6NM60N
STD6NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STF6NM60N
STF6NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 4.6A max drain current. It operates in enhancement mode with a low on-resistance of 0.92Ω. This versatile FET is suitable for various power management tasks.
STP6NM60N
STP6NM60N from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 4.6A max drain current. It operates in enhancement mode with a power dissipation of up to 45W. Its compact design suits various electronic circuits.
FQD6N40CTF
FQD6N40CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 18A and Avalanche Energy Rating of 270mJ. With a max power dissipation of 48W and operating temperature up to 150°C, it offers reliable performance in various electronic systems.
FAST SWITCHING
270 mJ
400 V
1 ohm
TO-252AA
48 W
STB12NM60N-1
STB12NM60N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. This versatile FET operates efficiently in high-temperature environments up to 150 °C.
.41 ohm
40 A
40
STB12NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
STF12NM60N
STF12NM60N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 10A max drain current. It operates in enhancement mode with a low on-resistance of 0.41Ω. Ideal for high-efficiency power management solutions.
STP12NM60N
STP12NM60N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. Its robust design suits high-efficiency power management in various electronic devices.
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