Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STS26N3LLH6
STMicroelectronics
STS26N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage and 104A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.0053 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE at up to 150 °C.
ULTRA-LOW RESISTANCE
525 mJ
SINGLE WITH BUILT-IN DIODE
30 V
26 A
.0053 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
1
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
2.7 W
104 A
FET General Purpose Powers
YES
GULL WING
DUAL
SWITCHING
SILICON
STU3LN62K3
STU3LN62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 10A IDM, 90mJ EAS, and 2.5A ID for efficient power management in ENHANCEMENT MODE operation. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in various electronic systems.
90 mJ
620 V
2.5 A
3 ohm
TO-251
R-PSIP-T3
3
IN-LINE
10 A
NO
THROUGH-HOLE
SINGLE
STW23NM50N
STW23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM and 0.19 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a METAL-OXIDE SEMICONDUCTOR technology and comes in a RECTANGULAR package with THROUGH-HOLE terminals.
254 mJ
500 V
17 A
.19 ohm
TO-247
R-PSFM-T3
e3
FLANGE MOUNT
68 A
FET General Purpose Power
Matte Tin (Sn)
STW34NM60ND
STW34NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 116A max pulsed drain current and 0.11 ohm max drain-source resistance. Operating in enhancement mode, it has a 210W power dissipation rating and can withstand up to 150°C temperature.
345 mJ
DRAIN
600 V
29 A
.11 ohm
210 W
116 A
STW36NM60N
STW36NM60N by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 29A ID. Ideal for SWITCHING applications, it has a max IDM of 116A and EAS of 345mJ. Operating in ENHANCEMENT MODE, it features 0.105 ohm Drain-Source On Resistance and can handle up to 210W power dissipation at 150 °C.
.105 ohm
1.75 pF
STW47NM60ND
STW47NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 255W and operates in ENHANCEMENT MODE up to 150 °C.
1000 mJ
35 A
.088 ohm
255 W
140 A
STW54NM65ND
STW54NM65ND by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 196A IDM, 0.065 ohm RDS(on), and 49A ID, operating in ENHANCEMENT MODE. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.
850 mJ
650 V
49 A
.065 ohm
196 A
TIN
STW60N65M5
STW60N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 184A IDM, 1400mJ EAS, and 0.059 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at 150 °C.
1400 mJ
46 A
.059 ohm
280 W
184 A
MATTE TIN
STW62NM60N
STW62NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 220A IDM, 65A ID, and 0.048 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.
65 A
55 A
.048 ohm
450 W
220 A
DMS3016SSSA-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.54 W; Additional Features: HIGH RELIABILITY; Operating Mode: ENHANCEMENT MODE;
HIGH RELIABILITY
9.8 A
.016 ohm
260
1.54 W
90 A
30
STB155N3H6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; No. of Terminals: 2; Case Connection: DRAIN;
80 A
.003 ohm
TO-263AB
R-PSSO-G2
2
175 Cel
110 W
320 A
STD155N3H6
STD155N3H6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.003 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 110W, this MOSFET is designed for high-power requirements.
TO-252
STH210N75F6-2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
75 V
180 A
.0028 ohm
300 W
720 A
STI24NM60N
STI24NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 300mJ EAS, and 0.19 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with METAL-OXIDE SEMICONDUCTOR technology and SILICON element material.
300 mJ
TO-262AA
STI300N4F6
STI300N4F6 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A Drain Current, and 0.002 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temperature. Package: PLASTIC/EPOXY RECTANGULAR IN-LINE with 3 terminals.
40 V
160 A
.002 ohm
640 A
STL100N1VH5
STL100N1VH5 by STMicroelectronics is a N-CHANNEL FET with 12V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 60W and operates in ENHANCEMENT MODE. With a package style of SMALL OUTLINE, it can withstand temperatures from -55 to 150 °C.
12 V
100 A
.004 ohm
240 pF
R-PDSO-F5
5
-55 Cel
60 W
FLAT
STL75N8LF6
STL75N8LF6 by STMicroelectronics is a N-CHANNEL FET with 80V DS Breakdown Voltage, 72A IDM, and 0.0082 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175 °C max temp. The transistor features a built-in diode, small outline package style, and 670mJ EAS rating.
670 mJ
80 V
75 A
18 A
.0082 ohm
R-PDSO-N5
80 W
72 A
NO LEAD
STL80N75F6
STL80N75F6 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A Drain Current, 0.0063 ohm On Resistance, and 150 °C Operating Temperature. This PLASTIC/EPOXY transistor has a DUAL Terminal Position and is suitable for high-power circuits requiring fast switching capabilities.
.0063 ohm
74 A
STS19N3LLH6
STS19N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 76A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package style is SMALL OUTLINE with GULL WING terminals.
19 A
.0075 ohm
76 A
STW56NM60N
STW56NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Drain Current, 0.06 ohm On Resistance, and 180A Pulsed Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W at 150 °C.
45 A
.06 ohm
STL100N6LF6
STL100N6LF6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 88A IDM, and 0.0072 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package has 5 terminals and DUAL terminal position.
60 V
22 A
.0072 ohm
88 A
NTMFS5830NLT1G
Onsemi
NTMFS5830NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 0.0036 ohm max RDS(on). It is used in applications requiring high power dissipation up to 125W, such as power supplies and motor control systems.
361 mJ
172 A
28 A
.0036 ohm
125 W
690 A
Tin (Sn)
NVD5117PLT4G
NVD5117PLT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 419A IDM, and 0.022 ohm RDS(on). Ideal for power applications requiring high drain current handling capabilities. Suitable for use in enhancement mode operation at up to 175°C operating temperature.
240 mJ
61 A
11 A
.022 ohm
P-CHANNEL
118 W
419 A
Other Transistors
Matte Tin (Sn) - annealed
NVMFS5832NLT1G
NVMFS5832NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 120A Drain Current, and 0.0072 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package suitable for high-power applications like motor control and power supplies. Operating in ENHANCEMENT MODE, it can handle up to 523A Pulsed Drain Current.
120 A
127 W
523 A
NVMFS5832NLT3G
NVMFS5832NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 120A Drain Current, and 0.0072 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for high-power applications requiring fast switching capabilities. Operating in ENHANCEMENT MODE, it offers a max power dissipation of 127W at temperatures up to 175°C.
NVTFS4824NTAG
NVTFS4824NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 46A Drain Current, and 0.0075 ohm On Resistance. Ideal for power applications requiring high current handling in compact spaces. Operates in Enhancement Mode with built-in diode, suitable for surface mount designs.
72 mJ
21 W
402 A
NVTFS4824NTWG
NVTFS4824NTWG by Onsemi is a single N-channel FET with built-in diode, featuring a min DS breakdown voltage of 30V and max pulsed drain current of 402A. Ideal for power applications, this MOSFET has an avalanche energy rating of 72mJ and max operating temperature of 175 °C.
RSD175N10TL
ROHM
ROHM RSD175N10TL is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.119 ohm RDS(ON), and 35A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package.
100 V
17.5 A
.119 ohm
e2
TIN COPPER
10
NTMFS4946NT1G
NTMFS4946NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 205mJ EAS, and 0.0051 ohm RDS(ON). Operating temp range -55 to 150 °C.
205 mJ
12.7 A
.0051 ohm
289 pF
R-PDSO-F6
6
55.5 W
200 A
STF11N65K3
STF11N65K3 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 40A max pulsed drain current and 0.85 ohm max drain-source resistance. This MOSFET operates in enhancement mode and has a max power dissipation of 35W, making it suitable for high-power applications.
212 mJ
ISOLATED
.85 ohm
TO-220AB
35 W
40 A
NTDV3055L104-1G
NTDV3055L104-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and a built-in DIODE. Operating at up to 175 °C, this N-CHANNEL transistor has a max power dissipation of 48W in a RECTANGULAR package.
61 mJ
12 A
.104 ohm
48 W
NTDV3055L104T4G
NTDV3055L104T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with a built-in diode in a PLASTIC/EPOXY package. Operating in enhancement mode, this MOSFET has a max power dissipation of 48W and can handle up to 175 °C temperature.
NVD5807NT4G
NVD5807NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 45A IDM, and 0.031 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 33W. The transistor features a built-in diode and can handle up to 175°C operating temperature.
29.4 mJ
23 A
.031 ohm
33 W
STB18N55M5
STB18N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, 52A IDM, and 0.24 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
200 mJ
550 V
13 A
.24 ohm
245
90 W
52 A
STI11NM80
STI11NM80 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 400mJ EAS, operating in ENHANCEMENT MODE at up to 150 °C. With 0.4 ohm RDS(on) and 150W Pd, it's suitable for high-power circuits requiring reliable performance.
400 mJ
800 V
.4 ohm
150 W
44 A
STI260N6F6
STI260N6F6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 120A ID, and 0.003 ohm RDS(on). Ideal for SWITCHING applications due to its 480A IDM and 300W Pd. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and Matte Tin finish.
480 A
STI26NM60N
STI26NM60N by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, 80A IDM, and 0.165 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features a SINGLE configuration with BUILT-IN DIODE and operates in THROUGH-HOLE package style.
610 mJ
20 A
.165 ohm
NTMFS4983NFT1G
NTMFS4983NFT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.0031 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 150 °C max temp.
101 mJ
106 A
.0031 ohm
38 W
NTMFS4983NFT3G
NTMFS4983NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 101mJ EAS, and 0.0031 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and DUAL terminal position.
NTTFS4985NFTWG
NTTFS4985NFTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 192A IDM, and 0.0052 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
52 mJ
64 A
16.3 A
.0052 ohm
22.73 W
192 A
NVD6820NLT4G
NVD6820NLT4G by Onsemi is a N-CHANNEL FET with 90V DS Breakdown Voltage, 310A IDM, and 144mJ EAS. Ideal for power applications in automotive industry due to AEC-Q101 standard compliance and high drain current capacity.
144 mJ
90 V
50 A
.0205 ohm
100 W
310 A
AEC-Q101
NVD6824NLT4G
NVD6824NLT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 231A IDM, and 0.023 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
80 mJ
41 A
8.5 A
.023 ohm
88 W
231 A
NVMFS5826NLT1G
NVMFS5826NLT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 130A IDM, and 0.032 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package suitable for power management applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 39W at 175 °C.
20 mJ
.032 ohm
39 W
130 A
NVMFS5826NLT3G
NVMFS5826NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 26A Max ID, and 0.032 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications. With 130A IDM and 39W Pd, it operates in Enhancement Mode at up to 175 °C.
NVMFS5844NLT1G
NVMFS5844NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 61A Drain Current, and 0.016 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
107 W
247 A
NVMFS5844NLT3G
NVMFS5844NLT3G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage, 61A max drain current, and 0.016 ohm RDS(on). Ideal for power management applications due to its 107W max power dissipation, small outline package style, and -55 to 175°C operating temperature range.
SIHG73N60E-GE3
Vishay Intertechnology
Vishay Intertechnology's SIHG73N60E-GE3 is a N-channel power FET with 600V DS breakdown voltage and 236A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.039 ohm max RDS(on), and 520W max power dissipation.
AVALANCHE RATED
2030 mJ
73 A
.039 ohm
TO-247AC
520 W
236 A
RCX450N20
RCX450N20 by ROHM is a N-CHANNEL power FET with a min DS breakdown voltage of 200V. It has a max pulsed drain current of 180A and a max drain-source on resistance of 0.055 ohm. This transistor is commonly used for switching applications.
160 mJ
200 V
.055 ohm
e1
TIN SILVER COPPER
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