Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NP180N04TUJ-E1-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSSO-G6;
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
180 A
.0015 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263
R-PSSO-G6
1
6
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
720 A
Not Qualified
YES
GULL WING
SINGLE
SWITCHING
SILICON
NP40N10PDF-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Transistor Element Material: SILICON; Additional Features: LOGIC LEVEL COMPATIBLE;
LOGIC LEVEL COMPATIBLE
61 mJ
100 V
40 A
.038 ohm
TO-263AB
R-PSSO-G2
2
175 Cel
1.8 W
80 A
FET General Purpose Powers
NP40N10VDF-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; Additional Features: LOGIC LEVEL COMPATIBLE;
.037 ohm
TO-252
1.2 W
NP40N10VDF-E2-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .037 ohm;
NP40N10YDF-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 80 A;
.036 ohm
R-PDSO-F8
8
1 W
Pure Tin (Sn)
FLAT
DUAL
NTD2955PT4G
Onsemi
NTD2955PT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A Max IDM and 0.18 ohm RDS(ON), suitable for ENHANCEMENT MODE operation. With a compact GULL WING package style and 175°C Max Operating Temp, it offers high power dissipation of 55W in various electronic designs.
216 mJ
60 V
12 A
.18 ohm
e3
P-CHANNEL
55 W
36 A
Other Transistors
TIN
NTD4959NH-35G
NTD4959NH-35G by Onsemi is a N-channel Power FET with 30V DS Breakdown Voltage and 130A IDM. Ideal for switching applications, it features 0.0125 ohm RDS(on) and 112.5mJ EAS rating. Package: PLASTIC/EPOXY, Configuration: SINGLE WITH DIODE, Technology: MOSFET.
112.5 mJ
30 V
9 A
.0125 ohm
R-PSIP-T3
3
IN-LINE
130 A
NO
THROUGH-HOLE
NTD4959NHT4G
NTD4959NHT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 130A IDM, and 0.0125 ohm Drain-Source Resistance. With a built-in diode and GULL WING terminals, this MOSFET operates in ENHANCEMENT MODE for efficient power management in various electronic devices.
260
30
IPA50R380CE
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
210 mJ
ISOLATED
500 V
.38 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
30 A
IPD60R1K4C6
IPD60R1K4C6 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, suitable for switching applications. It features a single configuration with built-in diode, 8A max pulsed drain current, and 1.4 ohm max RDS(on). This MOSFET operates in enhancement mode at up to 150°C, making it ideal for high-power applications.
26 mJ
600 V
3.2 A
1.4 ohm
150 Cel
28.4 W
8 A
FET General Purpose Power
IPD60R3K3C6
IPD60R3K3C6 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 4A and an operating temperature of up to 150°C. With a built-in diode, this MOSFET has a low on-resistance of 3.3 ohm and can handle up to 18.1W power dissipation in a small outline package.
6 mJ
1.7 A
3.3 ohm
18.1 W
4 A
NTBV5605T4G
The Onsemi NTBV5605T4G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 55A IDM and 0.14 ohm RDS(ON), suitable for high-power operations. With a max power dissipation of 88W and operating temperature of 175 °C, it offers reliable performance in various electronic systems.
338 mJ
18.5 A
.14 ohm
88 W
55 A
MATTE TIN
NTDV18N06LT4G
NTDV18N06LT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.065 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and built-in DIODE in a PLASTIC/EPOXY package. AEC-Q101 compliant, it operates b/w -55 to 175 °C with fast turn-on/off times of 180/120 ns.
72 mJ
18 A
.065 ohm
80 pF
-55 Cel
54 A
AEC-Q101
Tin (Sn)
120 ns
180 ns
NTDV20P06LT4G
NTDV20P06LT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and EAS of 304mJ, suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 175 °C operating range, it offers efficient performance in various electronic designs.
304 mJ
15.5 A
.15 ohm
120 pF
65 W
50 A
185 ns
200 ns
STD3PK50Z
STMicroelectronics
STD3PK50Z by STMicroelectronics is a P-CHANNEL FET for switching applications. It features a 500V DS breakdown voltage, 11.2A max pulsed drain current, and 4 ohm max drain-source resistance. With a small outline package style and operating temperature range of -55 to 150°C, it's ideal for power management in various electronic devices.
2.8 A
4 ohm
70 W
11.2 A
Matte Tin (Sn) - annealed
STD65N3LLH5
STD65N3LLH5 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 65A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 50W. This transistor features a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
ULTRA-LOW RESISTANCE
65 A
.0097 ohm
50 W
260 A
STFI20NK50Z
STFI20NK50Z by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 850mJ EAS, and 0.27 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with SILICON element material and ISOLATED case connection.
850 mJ
17 A
.27 ohm
68 A
STU65N3LLH5
STU65N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 260A IDM, and 0.0097 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
TO-251
STB11N52K3
STB11N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 40A IDM, and 0.51 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features a built-in DIODE, operates in SINGLE configuration, and has GULL WING terminals.
170 mJ
525 V
10 A
.51 ohm
STB16N65M5
STB16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 48A IDM, and 0.279 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE with 200mJ EAS.
200 mJ
650 V
.279 ohm
245
90 W
48 A
STB23NM50N
STB23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 68A IDM, and 0.19 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package style is SMALL OUTLINE with GULL WING terminals.
254 mJ
.19 ohm
125 W
STB5N62K3
STB5N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 16.8A IDM, and 1.6Ω RDS(on). Ideal for SWITCHING applications due to its 70W power dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
ULTRA LOW-ON RESISTANCE
120 mJ
620 V
4.2 A
1.6 ohm
16.8 A
STD3LN62K3
STD3LN62K3 by STMicroelectronics is an N-CHANNEL Power FET with 620V DS Breakdown Voltage. It features a built-in diode for switching applications, offering 10A IDM and 90mJ EAS. This MOSFET has a max ID of 2.5A, 3Ω RDS(on), and comes in a small outline package suitable for surface mount configurations.
90 mJ
2.5 A
3 ohm
STF11N52K3
STF11N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 40A IDM, and 0.51 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. The transistor features a built-in diode and can handle up to 10A drain current.
STF120NF10
STF120NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 164A Max Pulsed Drain Current and 0.0105 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 45W at 175 °C.
550 mJ
41 A
.0105 ohm
45 W
164 A
STF16N50U
STF16N50U by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 60A IDM, 250mJ EAS, and 0.52 ohm RDS(on). Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals. Operating Mode: ENHANCEMENT MODE up to 150 °C.
250 mJ
15 A
.52 ohm
30 W
60 A
STF23NM50N
STF23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 254mJ EAS, and 0.19 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 30W at 150 °C.
STF34NM60ND
STF34NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 116A pulsed drain current, 345mJ avalanche energy rating, and 0.11 ohm max on resistance. Package style is flange mount with isolated case connection.
345 mJ
29 A
.11 ohm
40 W
116 A
STF3LN62K3
STF3LN62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 10A IDM, and 90mJ EAS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in diode. Package style is FLANGE MOUNT with THROUGH-HOLE terminals in PLASTIC/EPOXY material.
STFI13NM60N
STFI13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 44A IDM, and 0.36 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
220 mJ
11 A
.36 ohm
44 A
STFW12N120K5
STFW12N120K5 by STMicroelectronics is a N-CHANNEL FET with 1200V DS breakdown voltage, 48A IDM, and 0.69 ohm RDS. It's used for switching applications due to its 63W power dissipation, ENHANCEMENT MODE operation, and built-in diode in a RECTANGULAR package.
1200 V
.69 ohm
63 W
STFW60N65M5
STFW60N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 184A IDM, 1400mJ EAS, and 0.059 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 63W at 150 °C.
1400 mJ
46 A
.059 ohm
184 A
STH300NH02L-6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 6; Maximum Drain-Source On Resistance: .0012 ohm;
1600 mJ
24 V
.0012 ohm
300 W
STI6N62K3
STI6N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 22A IDM, and 1.2ohm RDS(on). Ideal for SWITCHING applications due to its 90W Power Dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration.
140 mJ
5.5 A
1.2 ohm
TO-262AA
22 A
Matte Tin (Sn)
STL160N3LLH6
STL160N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 140A IDM, and 0.002 ohm RDS(on). Ideal for SWITCHING applications due to its 80W Pdiss, 150 °C Tmax, and DUAL terminal position.
900 mJ
160 A
35 A
.002 ohm
R-PDSO-N5
5
80 W
140 A
NO LEAD
STL16N1VH5
STL16N1VH5 by STMicroelectronics is a N-CHANNEL FET with 16A max drain current, 0.004 ohm max on resistance, and 64A pulsed drain current. Ideal for switching applications due to its built-in diode, small outline package style, and 12V min breakdown voltage.
350 mJ
12 V
16 A
.004 ohm
S-PDSO-N5
SQUARE
64 A
STL52N25M5
STL52N25M5 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 112A IDM, and 0.076 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W.
230 mJ
250 V
28 A
.076 ohm
R-PDSO-F5
225
110 W
112 A
STL7NM60N
STL7NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It has a Max IDM of 5.6A and EAS of 119mJ, operating in ENHANCEMENT MODE. The transistor features a 0.9 ohm RDS(on) and can handle up to 68W power dissipation, suitable for high-power circuits.
119 mJ
5.8 A
.9 ohm
S-PQCC-N5
CHIP CARRIER
68 W
5.6 A
QUAD
STL8N65M5
STL8N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 5.6A IDM, and 0.6 ohm RDS(on). It's used for switching applications in enhancement mode, with 120mJ EAS rating.
1.4 A
.6 ohm
2 pF
S-XQCC-N5
UNSPECIFIED
STP10NM60ND
STP10NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 32A max pulsed drain current and 0.6 ohm max drain-source resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 70W at 150 °C.
130 mJ
32 A
STP11N52K3
STP11N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 40A IDM, and 0.51 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology.
STP210N75F6
STP210N75F6 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Drain Current, 0.0037 ohm On Resistance, and 480A Pulsed Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W and can withstand temperatures up to 175 °C.
75 V
120 A
.0037 ohm
480 A
STP23NM50N
STP23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 254mJ EAS, and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150 °C.
STP3LN62K3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
STP52N25M5
STP52N25M5 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 28A ID, and 0.065 ohm RDS(on). Ideal for SWITCHING applications due to its 112A IDM and 230mJ EAS. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
STP5N62K3
STP5N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 16.8A IDM, and 1.6Ω RDS(on). Ideal for SWITCHING applications due to its 70W Pdiss and ENHANCEMENT MODE operation at up to 150 °C.
STP6N52K3
STP6N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 20A IDM, and 1.2 ohm RDS(on). Ideal for SWITCHING applications due to its 70W Pdiss and 110mJ EAS ratings in ENHANCEMENT MODE operation.
110 mJ
5 A
20 A
STP80N70F4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 68 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
185 mJ
68 V
85 A
.0098 ohm
150 W
340 A
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