Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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RP1H065SPTR
ROHM
ROHM RP1H065SPTR is a P-CHANNEL FET with 45V DS Breakdown Voltage and 6.5A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.046 ohm RDS(ON) and 26A IDM.
DRAIN
SINGLE WITH BUILT-IN DIODE
45 V
6.5 A
.046 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F6
1
6
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
P-CHANNEL
26 A
YES
FLAT
DUAL
SWITCHING
SILICON
DMN3112SQ-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Additional Features: HIGH RELIABILITY; No. of Terminals: 3;
HIGH RELIABILITY
30 V
5.8 A
.057 ohm
R-PDSO-G3
e3
3
150 Cel
260
N-CHANNEL
1.4 W
20 A
AEC-Q101
FET General Purpose Powers
MATTE TIN
GULL WING
30
NDF11N50ZH
Onsemi
NDF11N50ZH by Onsemi is a Power FET with 500V DS Breakdown Voltage, 44A IDM, and 0.52 ohm RDS(on). Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in isolated case connections at temperatures up to 150 °C.
420 mJ
ISOLATED
500 V
12 A
.52 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
39 W
44 A
FET General Purpose Power
NO
TIN
THROUGH-HOLE
SINGLE
NTMFS4936NCT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; No. of Terminals: 5; Maximum Drain Current (Abs) (ID): 79 A;
96.8 mJ
79 A
11.6 A
.0048 ohm
R-PDSO-F5
5
43 W
235 A
NTP5860NLG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 283 W; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
735 mJ
60 V
220 A
130 A
.0036 ohm
175 Cel
283 W
660 A
NVB25P06T4G
NVB25P06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 600mJ EAS, and 0.082 ohm RDS(ON). With a max power dissipation of 120W and operating temperature up to 175 °C, it's suitable for various high-power electronic designs.
600 mJ
27.5 A
.082 ohm
R-PSSO-G2
2
120 W
80 A
Other Transistors
NVD20N03L27T4G
NVD20N03L27T4G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 288mJ EAS rating.
ULTRA LOW ON-RESISTANCE
288 mJ
.031 ohm
1.75 W
60 A
Matte Tin (Sn) - annealed
NVD6415ANLT4G
NVD6415ANLT4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 79mJ EAS, and 0.056 ohm RDS(ON). Suitable for high-power circuits in automotive and industrial electronics due to its small outline package and high power dissipation of 83W.
79 mJ
100 V
23 A
.056 ohm
70 pF
-55 Cel
83 W
SUD50P04-13L-GE3
Vishay Intertechnology
Vishay Intertechnology's SUD50P04-13L-GE3 is a P-channel FET with 40V DS breakdown voltage and 50A max drain current. Ideal for switching applications, it features a built-in diode, 0.013 ohm RDS(on), and 100A pulsed drain current. Suitable for enhancement mode operation in power electronics due to its high performance and small outline package style.
80 mJ
40 V
50 A
.013 ohm
TO-252
100 A
NSTR4501NT1G
NSTR4501NT1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for use in automotive electronics due to AEC-Q101 compliance and high operating temperature of 150 °C.
20 V
3.2 A
.08 ohm
TO-236
1.25 W
10 A
NVD4810NT4G
NVD4810NT4G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 120A IDM, and 0.0157 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance. It features an N-CHANNEL configuration with built-in diode and operates in enhancement mode.
98 mJ
54 A
9 A
.0157 ohm
50 W
120 A
NVD5806NT4G
NVD5806NT4G by Onsemi is a power FET with 40V DS breakdown voltage, 33A max drain current, and 0.019 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
39 mJ
33 A
.019 ohm
40 W
67 A
NVD6414ANT4G
NVD6414ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 117A IDM, and 0.037 ohm RDS. Ideal for automotive applications due to AEC-Q101 standard compliance and 175 °C operating temperature. Single-channel design with built-in diode in a small outline package for efficient power management.
154 mJ
32 A
.037 ohm
100 W
117 A
NVD6415ANT4G
NVD6415ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 89A IDM, and 0.055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
.055 ohm
89 A
NVD6416ANT4G
NVD6416ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 62A IDM, and 0.081 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for automotive applications due to AEC-Q101 compliance.
43 mJ
17 A
.081 ohm
71 W
62 A
STB34NM60N
STMicroelectronics
STB34NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 126A IDM, 345mJ EAS, and 0.105ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 210W and can handle up to 31.5A ID.
345 mJ
600 V
29 A
31.5 A
.105 ohm
TO-263AB
210 W
126 A
STI13NM60N
STI13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 44A IDM, and 0.36 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 11A ID and 90W power dissipation.
200 mJ
11 A
.36 ohm
TO-262AA
R-PSIP-T3
IN-LINE
90 W
STU13NM60N
STU13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 0.36 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package with IN-LINE style and DRAIN connection makes it suitable for various power electronics designs.
TO-251
NVMFS5830NLT1G
NVMFS5830NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max ID, and 0.0036 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
361 mJ
185 A
158 W
1012 A
NVMFS5830NLT3G
NVMFS5830NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max Drain Current, and 0.0036 ohm Max RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Features include 361mJ Avalanche Energy Rating and 175 °C Max Operating Temp.
STF130N10F3
STF130N10F3 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 184A IDM, and 0.0096 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
ULTRA LOW RESISTANCE
125 mJ
46 A
.0096 ohm
35 W
184 A
STH130N10F3-2
STH130N10F3-2 by STMicroelectronics is a N-channel Power FET with 100V DS breakdown voltage, 120A max drain current, and 0.0093 ohm on-resistance. Ideal for switching applications, it features a built-in diode, 450A pulsed drain current, and operates in enhancement mode at up to 175 °C.
.0093 ohm
245
250 W
450 A
STL35N6F3
STL35N6F3 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.022 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an 80W power dissipation rating and can withstand up to 175 °C temperature.
409 mJ
35 A
.022 ohm
80 W
STL70N10F3
STL70N10F3 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 64A IDM, 770mJ EAS, and 0.0084 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power circuits.
770 mJ
82 A
58 A
.0084 ohm
136 W
64 A
STP130N10F3
STMicroelectronics STP130N10F3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Max Drain Current, 0.0096 ohm RDS(on), and 175 °C Max Operating Temp. Suitable for high-power switching circuits due to its 450A IDM and 125mJ EAS ratings.
DMG4N65CT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9.14 W; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;
456 mJ
650 V
4 A
3 ohm
9.14 W
6 A
IPU60R1K4C6
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 8 A; Avalanche Energy Rating (EAS): 26 mJ;
26 mJ
1.4 ohm
TO-251AA
8 A
NVTFS5820NLTAG
NVTFS5820NLTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 29A ID, and 0.0115 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include N-CHANNEL polarity, 247A IDM, and 48mJ EAS rating.
48 mJ
.0115 ohm
S-PDSO-F5
SQUARE
3.2 W
247 A
NVTFS5820NLTWG
NVTFS5820NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 29A Drain Current, and 0.0115 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance and 175 °C operating temperature. Single configuration with built-in diode in a small outline package.
DMP2070UCB6-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.47 W; Maximum Pulsed Drain Current (IDM): 12 A; Package Style (Meter): GRID ARRAY;
3.5 A
2.5 A
.15 ohm
38 pF
R-PBGA-B6
e1
GRID ARRAY
1.47 W
TIN SILVER COPPER
BALL
BOTTOM
NVMFS5834NLT1G
NVMFS5834NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
75 A
14 A
.0136 ohm
107 W
276 A
NVMFS5834NLT3G
NVMFS5834NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
DMP2035UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .045 ohm; Package Shape: RECTANGULAR;
5.2 A
.045 ohm
R-PDSO-G6
2 W
24 A
SIHG14N50D-GE3
Vishay Intertechnology's SIHG14N50D-GE3 is a N-channel power FET with 500V DS breakdown voltage and 38A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.4 ohm max RDS(on), and 56mJ EAS rating.
56 mJ
.4 ohm
TO-247AC
38 A
IPA50R280CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Avalanche Energy Rating (EAS): 231 mJ; JESD-30 Code: R-PSFM-T3;
231 mJ
.28 ohm
42.9 A
IPA50R500CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE;
129 mJ
.5 ohm
IPA50R950CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Terminal Finish: TIN; Transistor Element Material: SILICON;
68 mJ
.95 ohm
12.8 A
NTP5862NG
NTP5862NG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 335A IDM, and 0.0057 ohm RDS(ON). Ideal for power applications requiring high drain current handling capacity. Suitable for use in circuits where low on-resistance and high power dissipation are crucial.
205 mJ
98 A
.0057 ohm
115 W
335 A
NVB6410ANT4G
NVB6410ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for high-power applications in automotive electronics due to its AEC-Q101 compliance and 188W Pdiss.
500 mJ
76 A
188 W
305 A
NVB6411ANT4G
NVB6411ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 285A IDM. Ideal for applications requiring high power dissipation, such as automotive electronics due to AEC-Q101 standard compliance.
470 mJ
77 A
.014 ohm
217 W
285 A
NVB6412ANT4G
NVB6412ANT4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 240A IDM, and 0.0182 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
300 mJ
.0182 ohm
167 W
240 A
NVB6413ANT4G
NVB6413ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 178A IDM. Ideal for applications requiring high power dissipation up to 136W, such as automotive systems due to AEC-Q101 standard compliance.
42 A
.028 ohm
178 A
NVB5860NT4G
NVB5860NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 660A IDM, and 0.003 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
.003 ohm
IPD320N20N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 136 A; Transistor Element Material: SILICON; JESD-609 Code: e3;
190 mJ
200 V
34 A
.032 ohm
TO-252AA
136 A
NTMFS4982NFT1G
NTMFS4982NFT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It has a 30V DS Breakdown Voltage, 350A IDM, and 0.0019 ohm RDS(on). With a max power dissipation of 89.3W and operating temperature of 150 °C, it offers high performance in a small outline package.
36 A
26.5 A
.0019 ohm
89.3 W
350 A
NTMFS4982NFT3G
NTMFS4982NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 350A IDM, and 0.0019 ohm RDS(ON). Ideal for SWITCHING applications, it has a max power dissipation of 89.3W and operates at temperatures up to 150 °C.
STF15N65M5
STF15N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 44A IDM, and 0.34 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features a built-in DIODE and has a max drain current of 11A.
160 mJ
.34 ohm
STF15N80K5
STF15N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. It features 56A pulsed drain current and 0.375 ohm max on-resistance. The transistor operates in enhancement mode, with a max power dissipation of 35W at 150°C.
800 V
.375 ohm
56 A
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