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AO3422L

Alpha & Omega Semiconductor

AO3422L by Alpha & Omega Semiconductor

AO3422L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 55V DS Breakdown Voltage and 10A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.16 ohm Drain-Source On Resistance.

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Aztec Data Supply Inc.

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AZTECH Wire

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Overview

Discover a new level of power efficiency with the AO3422L by Alpha & Omega Semiconductor. This N-CHANNEL Power Field Effect Transistor offers unparalleled performance and reliability, making it a top choice for switching applications. With a maximum drain current of 2.1 A and a minimum DS breakdown voltage of 55 V, this FET is designed to optimize power consumption while delivering exceptional results. Trust in the quality and expertise of Alpha & Omega Semiconductor to provide you with the cutting-edge technology you need to take your projects to the next level. Choose the AO3422L for superior performance and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various environments.

Polarity or Channel Type: N-CHANNEL

Enhances efficiency and performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space, making it a convenient option for users.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliability and performance in such scenarios.

Surface Mount: YES

Allows for easy installation and saves space on the circuit board.

Minimum DS Breakdown Voltage: 55 V

Provides a high breakdown voltage, making the product suitable for handling higher voltages.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into the circuit layout.

Terminal Form: GULL WING

Enables secure connectivity and efficient heat dissipation.

Operating Mode: ENHANCEMENT MODE

Offers enhanced control and efficiency in operation.

Maximum Pulsed Drain Current (IDM): 10 A

Allows the product to handle higher current loads during pulsed operation.

Maximum Drain Current (Abs) (ID): 2.1 A

Ensures reliable performance within specified current limits.

No. of Terminals: 3

Simplifies the circuit connection and enhances compatibility with various systems.

Maximum Power Dissipation (Abs): 1.25 W

Indicates the maximum power the product can handle, ensuring safe operation within set limits.

Package Style (Meter): SMALL OUTLINE

Helps reduce space constraints and enhances versatility in placement on the circuit board.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high-performance characteristics and reliability in operation.

Maximum Operating Temperature: 150 °C

Allows for operation in elevated temperature conditions without compromising performance.

Transistor Element Material: SILICON

Known for its high conductivity and durability, ensuring longevity of the product.

Minimum Operating Temperature: -55 °C

Enables operation in low-temperature environments without impacting functionality.

Maximum Drain-Source On Resistance: 0.16 ohm

Provides low resistance for efficient current flow, reducing power loss and heat generation.

Terminal Position: DUAL

Facilitates easy connection and enhances stability in the circuit layout.

Maximum Feedback Capacitance (Crss): 12.6 pF

Indicates low feedback capacitance, ensuring stable and reliable performance in high-frequency applications.

Technical Specifications

Power Field Effect Transistors (FET) AO3422L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Alpha & Omega Semiconductor

Specs

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

2.1 A

Maximum Drain Current (ID):

2.1 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12.6 pF

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.25 W

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AO3422L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Alpha & Omega Semiconductor

Alpha and Omega Semiconductor is committed to excellence in design, manufacturing, and responsiveness to our customers through the continued development of new technologies, products and innovative solutions. We bring to the market devices designed to benefit our customers by meeting their product specific needs. Our mission is to bring value to our customers, shareholders and employees. We pride ourself in our expertise in all areas of power semiconductor technology and business operations. Our intellectual property and technical knowledge encompasses the latest advancements in the power semiconductor industry. AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions. AOS's portfolio of products targets high-volume applications, including but not limited to portable computers, flat panel TVs, LED lighting, smart phones, battery packs, consumer and industrial motor controls and power supplies for TVs, computers, servers and telecommunications equipment.

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