Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
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BU941ZTFP
STMicroelectronics
BU941ZTFP by STMicroelectronics is a NPN Power BJT with 55W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has a max collector-emitter voltage of 350V and max collector current of 15A. The package style is flange mount with matte tin terminal finish.
ISOLATED
15 A
350 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
300
TO-220AB
R-PSFM-T3
e3
1
3
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NPN
55 W
Not Qualified
Other Transistors
NO
MATTE TIN
THROUGH-HOLE
SINGLE
AMPLIFIER
SILICON
BU941ZT
STMicroelectronics' BU941ZT is a NPN BJT with Darlington configuration, ideal for switching applications. It features 2V VCEsat, 150W power dissipation, and 15A collector current. With a max voltage of 350V and operating temperature of 175°C, it's suitable for high-power tasks in various industries.
COLLECTOR
180 W
150 W
SWITCHING
2 V
BUB941ZT
STMicroelectronics BUB941ZT is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It features a max VCEsat of 1.8V, 150W power dissipation, and can handle up to 15A collector current. The package style is small outline with gull wing terminals for surface mount assembly.
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
245
YES
Matte Tin (Sn) - annealed
GULL WING
30
1.8 V
MJW0281AG
Onsemi
The Onsemi MJW0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.
260 V
75
TO-247
Tin (Sn)
30 MHz
MJW0302AG
The Onsemi MJW0302AG is a PNP BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.
PNP
NJL0281DG
NJL0281DG by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 180W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Operates at up to 150°C, featuring a transition frequency of 30MHz in a rectangular package style.
HIGH RELIABILITY
SINGLE WITH BUILT-IN DIODE
TO-264
R-PSFM-T5
5
150 Cel
NJL0302DG
NJL0302DG by Onsemi is a PNP BJT with 180W power dissipation, 260V max collector-emitter voltage, and 30MHz transition frequency. Ideal for amplifier applications due to its single configuration with built-in diode and high collector current of 15A.
NJL4281DG
NJL4281DG by Onsemi is a NPN BJT transistor with 350V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its hFE of 10 and fT of 35MHz. Packaged in PLASTIC/EPOXY with FLANGE MOUNT style for through-hole mounting.
10
260
200 W
TIN
35 MHz
NJL4302DG
NJL4302DG by Onsemi is a PNP BJT transistor with 5 terminals. It has a max power dissipation of 200W, operating temp of 150 °C, and max collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration with built-in diode and silicon element material.
2STA1943
2STA1943 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates up to 150 °C, and supports collector-emitter voltages of 230V. Its robust design ensures reliable performance in demanding environments.
230 V
35
TO-264AA
NOT SPECIFIED
2STC5200
2STC5200 by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 150W, max. collector-emitter voltage of 230V, and max. collector current of 15A. It is used as an amplifier in applications requiring high power handling capabilities and operates at temperatures up to 150°C.
NJW0281G
NJW0281G by Onsemi is a NPN BJT with 150W power dissipation, 250V max collector-emitter voltage, and 30MHz fT. Ideal for amplifier applications due to its single configuration and high hFE of 75. The transistor's flange mount package with matte tin finish makes it suitable for through-hole mounting in various electronic devices.
250 V
2STA1962
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;
130 W
2STC5242
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;
MJW1302A
The Onsemi MJW1302A is a PNP BJT transistor with 230V VCE, 15A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 12 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.
12
TO-247AD
e0
235
TIN LEAD
MJW3281A
MJW3281A by Onsemi is a NPN BJT transistor with 230V max collector-emitter voltage, 15A max collector current, and 200W max power dissipation. Ideal for amplifier applications due to its single configuration and silicon element material. The package style is flange mount with through-hole terminals.
MJL4281A
The Onsemi MJL4281A is a NPN BJT transistor with 230W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 350V, max collector current of 15A, and min DC current gain of 10. The package style is flange mount with through-hole terminals in a rectangular shape.
230 W
MJL4302A
The Onsemi MJL4302A is a PNP BJT transistor with 230W power dissipation, 350V max. collector-emitter voltage, and 15A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
BDW47G
BDW47G by Onsemi is a PNP power BJT with 85W max power dissipation, 100V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a min hFE of 250 and fT of 4MHz.
100 V
250
85 W
4 MHz
MJL1302AG
The Onsemi MJL1302AG is a PNP power BJT with 200W max power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications, it has a min hFE of 45 and operates up to 150°C. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.
45
NJL1302D
NJL1302D by Onsemi is a PNP BJT with 200W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode. Features include 45 min DC current gain (hFE) and 30MHz nominal transition frequency.
NJL3281D
NJL3281D by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.
BUH150G
BUH150G by Onsemi is a NPN BJT transistor with 400V VCE, 15A IC, and 150W Ptot. Ideal for switching applications, it has a hFE of 4, operates up to 150°C, and features a flange mount package style.
LEADFORM OPTIONS ARE AVAILABLE
400 V
4
23 MHz
2N3055HG
The Onsemi 2N3055HG is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. Ideal for switching applications due to its single configuration and high transition frequency of 2.5MHz in a round package shape suitable for flange mount installations.
60 V
TO-204AA
O-MBFM-P2
200 Cel
METAL
ROUND
115 W
PIN/PEG
BOTTOM
40
2.5 MHz
2N6487G
The Onsemi 2N6487G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 15A. It has a min. DC current gain of 5, suitable for switching applications with a max. power dissipation of 30W at an operating temp. of 150°C.
30 W
5 MHz
2N6490G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 15 A;
BDW42G
The Onsemi BDW42G is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 250, and IC of 15A. With a package style of flange mount and operating temperature range from -55 to 150 °C, it offers high performance in various electronic designs.
200 pF
-55 Cel
3 V
BDW46G
The Onsemi BDW46G is a PNP power BJT with 85W max power dissipation, 80V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 250 and operating temperature up to 150°C, it offers reliable performance in various industrial settings.
80 V
MJ11022G
MJ11022G by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. With max. collector-emitter voltage of 250V and max. collector current of 15A, it can handle up to 175W power dissipation. Featuring built-in diode and resistor, this transistor operates at temperatures up to 175°C in a round flange mount package.
100
175 W
3 MHz
MJ15002G
MJ15002G by Onsemi is a PNP BJT transistor with 200W power dissipation, 140V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with round shape and bottom terminal position.
140 V
25
2 MHz
MJH11019G
The Onsemi MJH11019G is a PNP power BJT with a max collector-emitter voltage of 200V and collector current of 15A. Featuring a Darlington configuration, it has a min DC current gain of 100 and is ideal for switching applications. With a max power dissipation of 150W and operating temperature up to 150°C, this transistor is suitable for high-power electronic circuits.
200 V
MJH11020G
MJH11020G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 150W and can handle a max collector current of 15A. This transistor is commonly used for switching applications.
MJH11022G
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
TIP2955G
TIP2955G by Onsemi is a PNP BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals.
90 W
HD1520FX
HD1520FX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 64W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.
700 V
5.5
64 W
MJL0281A
The Onsemi MJL0281A is a NPN BJT transistor with max. Vce of 260V and Ic of 15A. It has hFE of 75, suitable for amplifier applications. The package style is flange mount with through-hole terminals, made of silicon material for high performance.
MJL0302A
The Onsemi MJL0302A is a PNP Power BJT with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and SILICON element. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style and TIN LEAD finish.
MJW0281A
The Onsemi MJW0281A is a NPN BJT transistor with 260V VCEO, 15A IC, and 150W Ptot. Ideal for amplifier applications due to its high hFE of 75 and low VCEsat of 1V. With a max operating temperature of 150 °C, it offers reliable performance in various environments.
400 pF
-65 Cel
1 V
MJW0302A
MJW0302A by Onsemi is a PNP BJT transistor with VCEsat of 1V, hFE of 75, and IC of 15A. Ideal for amplifier applications due to its high power dissipation of 150W and max operating temperature of 150 °C. Package style is flange mount with rectangular shape and through-hole terminals.
BD743B-S
Bourns
The Bourns BD743B-S is a NPN power BJT with 80V VCE, 15A IC, and 90W Ptot. Ideal for switching applications, it has a min hFE of 5 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals for easy mounting.
e1
TIN SILVER COPPER
MJL0281AG
The Onsemi MJL0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and features a PLASTIC/EPOXY package with FLANGE MOUNT style.
2SA1962O(Q)
Toshiba
Toshiba's 2SA1962O(Q) is a PNP BJT transistor with max. power dissipation of 130W, max. collector-emitter voltage of 230V, and max. collector current of 15A. Ideal for amplifier applications due to its single configuration and silicon element material, it operates at up to 150°C temperature with a nominal transition frequency of 30MHz.
80
2SC5242O(Q)
2SA1943N(S1,E,S)
Toshiba's 2SA1943N(S1,E,S) is a PNP BJT with max VCEsat of 3V, ideal for amplifier applications. With a max power dissipation of 150W and max collector-emitter voltage of 230V, it offers high performance in audio amplifiers. Featuring a min hFE of 35 and fT of 30MHz, this transistor ensures efficient signal processing in various electronic circuits.
360 pF
R-XSFM-T3
UNSPECIFIED
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