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BUH150G

Onsemi

BUH150G by Onsemi

BUH150G by Onsemi is a NPN BJT transistor with 400V VCE, 15A IC, and 150W Ptot. Ideal for switching applications, it has a hFE of 4, operates up to 150°C, and features a flange mount package style.

Median Price

$1.180

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8 parts In-Stock

1+ parts

-

100+ parts

$1.180

1k+ parts

$0.979

10k+ parts

$0.873

8

-

$1.180

$0.979

$0.873

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 967 parts In-Stock

1+ parts

$0.916

100+ parts

-

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-

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967

$0.916

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.167

100+ parts

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50

$1.167

-

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Vyrian

USA . 11,838 parts In-Stock

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11,838

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Halfin

Belgium . 11,365 parts In-Stock

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11,365

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VNN

France . 4,376 parts In-Stock

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4,376

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J2 Sourcing AB

Sweden . 3,524 parts In-Stock

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3,524

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Avant Electronics Limited

UK . 50 parts In-Stock

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50

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EMSNET

USA . 32 parts In-Stock

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32

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Ramos S.r.l.

Italy . 30 parts In-Stock

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30

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ABC Electronics Ltd.

UK . 14 parts In-Stock

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14

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,532 parts In-Stock

1+ parts

$0.868

100+ parts

-

1k+ parts

-

10k+ parts

-

1,532

$0.868

-

-

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.872

100+ parts

$0.794

1k+ parts

$0.715

10k+ parts

-

50

$0.872

$0.794

$0.715

-

Corohmni

South Africa . 201 parts In-Stock

1+ parts

$0.964

100+ parts

-

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201

$0.964

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Argo Parts USA

USA . 4,990 parts In-Stock

1+ parts

$1.167

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4,990

$1.167

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Continental Prestige Electronics

USA . 1,272 parts In-Stock

1+ parts

$1.167

100+ parts

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10k+ parts

$1.144

1,272

$1.167

-

-

$1.144

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.167

100+ parts

-

1k+ parts

$1.109

10k+ parts

$1.085

1,000

$1.167

-

$1.109

$1.085

Ampacity Inc.

Singapore . 8 parts In-Stock

1+ parts

$1.780

100+ parts

-

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8

$1.780

-

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AZTECH Wire

Italy . 206 parts In-Stock

1+ parts

$5.650

100+ parts

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206

$5.650

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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56,986

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TANS Electronics

Latvia . 8,041 parts In-Stock

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8,041

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Problanco Electronics

Mexico . 7,619 parts In-Stock

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7,619

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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SupplyDigital Components

Austria . 1,463 parts In-Stock

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1,463

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Kulean Microsystems

USA . 821 parts In-Stock

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821

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UHIMA Technologies

Türkiye . 689 parts In-Stock

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689

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Overview

Discover the BUH150G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With its NPN configuration and maximum power dissipation of 150W, this transistor offers reliable performance and durability. Whether you're in need of a component for industrial machinery or electronic devices, the BUH150G provides the value and benefits you're looking for. Trust in Onsemi's expertise in semiconductor manufacturing and experience seamless integration with this versatile transistor. Elevate your projects with the BUH150G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

Commonly used in electronic circuits and offers high voltage capability.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to integrate into circuits.

Transistor Application: SWITCHING

Designed for fast switching applications, making it ideal for various electronic devices.

Terminal Form: THROUGH-HOLE

Allows for easy and secure mounting onto circuit boards.

Maximum Power Dissipation (Abs): 150 W

Can handle high power levels without overheating, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Provides stability during mounting, ensuring secure placement in the circuit.

Minimum DC Current Gain (hFE): 4

Ensures efficient amplification of current, improving overall circuit performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without any issues, suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltages safely, making it versatile for various applications.

Transistor Element Material: SILICON

Provides excellent performance and reliability, commonly used in transistors.

Maximum Collector Current (IC): 15 A

Capable of handling high currents, making it suitable for power applications.

Terminal Finish: TIN

Provides good conductivity and solderability for secure connections.

Terminal Position: SINGLE

Simplifies circuit design and integration, making it easy to use.

Case Connection: COLLECTOR

Clear indication of terminal connections, making it easy to integrate into circuits.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering and reflow processes.

Nominal Transition Frequency (fT): 23 MHz

Offers high-frequency capabilities, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH150G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH150G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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