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BUH100BV

Onsemi

BUH100BV by Onsemi

The Onsemi BUH100BV is a NPN Power BJT with max. VCE of 400V and IC of 10A. It has a min. hFE of 6, suitable for switching applications at up to 150 °C. The transistor comes in a plastic/epoxy package with through-hole terminals, ideal for flange mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,188 parts In-Stock

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Digiode

USA . 197 parts In-Stock

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197

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Native Components

USA . 579 parts In-Stock

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$191.860

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$184.186

579

$191.860

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$184.186

Northwest PG Solutions

USA . 1,661 parts In-Stock

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$211.046

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TANS Electronics

Latvia . 8,344 parts In-Stock

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SupplyDigital Components

Austria . 3,876 parts In-Stock

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Kulean Microsystems

USA . 3,044 parts In-Stock

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Problanco Electronics

Mexico . 2,404 parts In-Stock

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UHIMA Technologies

Türkiye . 963 parts In-Stock

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963

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Corphita

USA . 835 parts In-Stock

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Corohmni

South Africa . 247 parts In-Stock

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Overview

Unleash the power of innovation with the BUH100BV by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their Power Bipolar Junction Transistors (BJTs). Ideal for switching applications, this NPN transistor offers a seamless single configuration that delivers outstanding performance. With a maximum collector-emitter voltage of 400V and a maximum collector current of 10A, the BUH100BV is the perfect solution for your electronic projects. Experience superior functionality and efficiency with this high-quality product from Onsemi. Upgrade your devices today and witness the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good insulation properties and durability, making the transistor suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN configuration allows for easy control of the transistor, making it suitable for switching applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and ease of use, making it a good choice for straightforward applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and placement on circuit boards, enhancing overall circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connection and ease of soldering, ensuring reliable performance in various environments.

Maximum Collector-Emitter Voltage: 400 V

High maximum collector-emitter voltage rating allows for handling of higher voltage applications, making this transistor versatile for different uses.

Maximum Collector Current (IC): 10 A

With a high collector current rating, this transistor can handle large currents without overheating, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 23 MHz

High nominal transition frequency allows for fast switching speeds, making this transistor ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100BV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100BV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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