Loading...

BUH100AK

Onsemi

BUH100AK by Onsemi

BUH100AK by Onsemi is a NPN Power BJT with max. VCE of 400V, IC of 10A, and hFE of 6. Ideal for switching applications, it operates up to 150 °C and has fT of 23MHz. Package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,652 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,652

-

-

-

-

Vyrian

USA . 225 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

225

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 235 parts In-Stock

1+ parts

$21.672

100+ parts

-

1k+ parts

-

10k+ parts

-

235

$21.672

-

-

-

Northwest PG Solutions

USA . 2,076 parts In-Stock

1+ parts

$23.839

100+ parts

$21.455

1k+ parts

-

10k+ parts

-

2,076

$23.839

$21.455

-

-

SupplyDigital Components

Austria . 8,230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,230

-

-

-

-

Kulean Microsystems

USA . 6,337 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,337

-

-

-

-

TANS Electronics

Latvia . 5,879 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,879

-

-

-

-

Problanco Electronics

Mexico . 5,859 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,859

-

-

-

-

Corphita

USA . 2,487 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,487

-

-

-

-

Corohmni

South Africa . 494 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

494

-

-

-

-

UHIMA Technologies

Türkiye . 26 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26

-

-

-

-

Overview

Upgrade your power control systems with the BUH100AK by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that guarantee reliability and performance. This Power Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum collector-emitter voltage of 400V and a nominal transition frequency of 23 MHz. With a maximum collector current of 10A, this NPN transistor provides efficient power management solutions. Trust in the BUH100AK to deliver exceptional value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and performance.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in different electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into electronic devices and circuit boards.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure connection and easy soldering, ensuring reliable operation in various environments.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and compatibility with different electronic components.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and heat dissipation, ensuring optimal performance and longevity.

Minimum DC Current Gain (hFE): 6

The minimum DC current gain of 6 indicates high amplification capabilities, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures and harsh conditions.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage of 400V allows for use in high-power applications and circuits.

Transistor Element Material: SILICON

Silicon is a commonly used material in transistors for its high conductivity and reliability, ensuring stable performance.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high currents, making it suitable for power applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides corrosion resistance and ensures a secure connection, prolonging the lifespan of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and installation, making it easy to use in various electronic projects.

Case Connection: COLLECTOR

The collector case connection allows for efficient heat dissipation and ensures stable operation at high currents and temperatures.

Nominal Transition Frequency (fT): 23 MHz

With a nominal transition frequency of 23 MHz, this transistor offers high-speed switching capabilities, making it ideal for fast response applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100AK attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100AK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20