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BUH100G

Onsemi

BUH100G by Onsemi

BUH100G by Onsemi is a NPN BJT transistor with 400V VCE, 10A IC, and 100W Ptot. Ideal for switching applications, it has a hFE of 6 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.925

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23,495 parts In-Stock

1+ parts

-

100+ parts

$0.925

1k+ parts

$0.767

10k+ parts

$0.684

23,495

-

$0.925

$0.767

$0.684

DigiKey

USA . 23,495 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.790

10k+ parts

-

23,495

-

-

$0.790

-

Verical

USA . 20,150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.959

10k+ parts

$0.855

20,150

-

-

$0.959

$0.855

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 710 parts In-Stock

1+ parts

$0.720

100+ parts

-

1k+ parts

-

10k+ parts

-

710

$0.720

-

-

-

Vyrian

USA . 2,042 parts In-Stock

1+ parts

$0.758

100+ parts

-

1k+ parts

-

10k+ parts

-

2,042

$0.758

-

-

-

ComSIT Distribution GmbH

Germany . 5,100 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,100

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-

-

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J2 Sourcing AB

Sweden . 2,321 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,321

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 362 parts In-Stock

1+ parts

$0.682

100+ parts

-

1k+ parts

-

10k+ parts

-

362

$0.682

-

-

-

Corohmni

South Africa . 393 parts In-Stock

1+ parts

$0.758

100+ parts

-

1k+ parts

-

10k+ parts

-

393

$0.758

-

-

-

Northwest PG Solutions

USA . 1,159 parts In-Stock

1+ parts

$3.119

100+ parts

-

1k+ parts

-

10k+ parts

-

1,159

$3.119

-

-

-

Microchip USA

USA . 191 parts In-Stock

1+ parts

$4.745

100+ parts

-

1k+ parts

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191

$4.745

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

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56,986

-

-

-

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Continental Prestige Electronics

USA . 23,495 parts In-Stock

1+ parts

-

100+ parts

$0.685

1k+ parts

-

10k+ parts

-

23,495

-

$0.685

-

-

TANS Electronics

Latvia . 6,925 parts In-Stock

1+ parts

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6,925

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SupplyDigital Components

Austria . 6,920 parts In-Stock

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6,920

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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-

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Problanco Electronics

Mexico . 4,139 parts In-Stock

1+ parts

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4,139

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-

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Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

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100+ parts

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3,700

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-

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Kulean Microsystems

USA . 1,876 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,876

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-

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Perfect Parts

USA . 746 parts In-Stock

1+ parts

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746

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Kepictronics

USA . 191 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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191

-

-

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Native Components

USA . 165 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.750

10k+ parts

-

165

-

-

$2.750

-

UHIMA Technologies

Türkiye . 35 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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35

-

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Overview

Unleash the power of innovation with the BUH100G by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. Embrace the reliability of Onsemi's manufacturing prowess as you witness seamless operation and maximum power dissipation of 100W. Whether you're in the automotive industry or industrial automation sector, the BUH100G delivers unmatched versatility and efficiency. Elevate your projects with this NPN transistor and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Single configuration makes it easy to integrate this transistor into circuits and systems.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in such scenarios.

Maximum Power Dissipation: 100 W

High power dissipation allows for handling larger loads and ensures the transistor can handle high power applications.

Package Shape: RECTANGULAR

Rectangular shape aids in easier mounting and fitting in circuits or on a PCB.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure connections and ease of soldering to circuit boards.

No. of Terminals: 3

Having 3 terminals allows for multiple connection points, giving flexibility in circuit design.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating enables the transistor to be used in high voltage applications.

Maximum Collector Current: 10 A

High collector current allows for handling larger current loads, making it suitable for high power applications.

Nominal Transition Frequency: 23 MHz

High transition frequency enables fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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