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BUH100

Onsemi

BUH100 by Onsemi

The Onsemi BUH100 is a NPN BJT transistor with 400V VCE, 10A IC, and 100W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.484

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 870 parts In-Stock

1+ parts

$2.292

100+ parts

$2.086

1k+ parts

$1.879

10k+ parts

-

870

$2.292

$2.086

$1.879

-

DigiKey

USA . 2,195 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.410

10k+ parts

-

2,195

-

-

$0.410

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Rochester

USA . 2,095 parts In-Stock

1+ parts

-

100+ parts

$0.475

1k+ parts

$0.395

10k+ parts

$0.352

2,095

-

$0.475

$0.395

$0.352

Verical

USA . 1,495 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.493

10k+ parts

$0.440

1,495

-

-

$0.493

$0.440

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,701 parts In-Stock

1+ parts

$0.370

100+ parts

-

1k+ parts

-

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1,701

$0.370

-

-

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Vyrian

USA . 655 parts In-Stock

1+ parts

$0.390

100+ parts

-

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655

$0.390

-

-

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DigiKey Marketplace

USA . 2,195 parts In-Stock

1+ parts

-

100+ parts

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2,195

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J2 Sourcing AB

Sweden . 170 parts In-Stock

1+ parts

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170

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Resion

USA . 80 parts In-Stock

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80

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,576 parts In-Stock

1+ parts

$0.351

100+ parts

-

1k+ parts

-

10k+ parts

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1,576

$0.351

-

-

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Corohmni

South Africa . 44 parts In-Stock

1+ parts

$0.373

100+ parts

-

1k+ parts

-

10k+ parts

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44

$0.373

-

-

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Component Stockers USA

USA . 2,290 parts In-Stock

1+ parts

$0.400

100+ parts

$0.380

1k+ parts

$0.340

10k+ parts

-

2,290

$0.400

$0.380

$0.340

-

Advanced Electronics

New Zealand . 870 parts In-Stock

1+ parts

$2.292

100+ parts

$2.086

1k+ parts

$1.879

10k+ parts

-

870

$2.292

$2.086

$1.879

-

Native Components

USA . 562 parts In-Stock

1+ parts

$8.170

100+ parts

-

1k+ parts

-

10k+ parts

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562

$8.170

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-

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Northwest PG Solutions

USA . 1,281 parts In-Stock

1+ parts

$8.987

100+ parts

$8.088

1k+ parts

-

10k+ parts

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1,281

$8.987

$8.088

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 13,293 parts In-Stock

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13,293

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Kepictronics

USA . 10,000 parts In-Stock

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10,000

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Kulean Microsystems

USA . 6,945 parts In-Stock

1+ parts

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6,945

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A-Z Elektronik GmbH

Germany . 6,255 parts In-Stock

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6,255

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Problanco Electronics

Mexico . 5,679 parts In-Stock

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5,679

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Alle Elektronik GmbH

Germany . 4,170 parts In-Stock

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4,170

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Continental Prestige Electronics

USA . 2,195 parts In-Stock

1+ parts

-

100+ parts

$0.352

1k+ parts

-

10k+ parts

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2,195

-

$0.352

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SupplyDigital Components

Austria . 460 parts In-Stock

1+ parts

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460

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UHIMA Technologies

Türkiye . 392 parts In-Stock

1+ parts

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392

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TANS Electronics

Latvia . 220 parts In-Stock

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220

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Assy Fe

Spain . 50 parts In-Stock

1+ parts

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100+ parts

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50

-

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-

Overview

Experience the power of reliable performance with the BUH100 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are ideal for switching applications. With a maximum power dissipation of 100W and a collector-emitter voltage of 400V, this NPN transistor offers unmatched durability and efficiency. Whether you're looking to upgrade your current system or embark on a new project, the BUH100 provides the value, benefits, and advantages you need to succeed. Trust in Onsemi for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, making this product versatile for different types of electronic designs.

Configuration: SINGLE

A single configuration simplifies the design and integration of the transistor into a circuit, making it easier to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in a circuit.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement of the transistor on a circuit board.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and stability, ensuring reliable performance in a circuit.

Maximum Power Dissipation (Abs): 100 W

With a high power dissipation capability, this transistor can handle large amounts of power without overheating.

Nominal Transition Frequency (fT): 23 MHz

The high transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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