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BUH100BS

Onsemi

BUH100BS by Onsemi

BUH100BS by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a min. DC current gain of 6 and max. collector current of 10A, it operates at up to 150 °C temperature making it suitable for high-power tasks in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,831 parts In-Stock

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Vyrian

USA . 575 parts In-Stock

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575

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SupplyDigital Components

Austria . 7,497 parts In-Stock

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Kulean Microsystems

USA . 4,981 parts In-Stock

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Northwest PG Solutions

USA . 1,940 parts In-Stock

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TANS Electronics

Latvia . 1,928 parts In-Stock

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Problanco Electronics

Mexico . 1,527 parts In-Stock

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Corohmni

South Africa . 492 parts In-Stock

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Native Components

USA . 421 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 83 parts In-Stock

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Overview

Unleash the power of efficiency and reliability with the BUH100BS by Onsemi. Crafted by a trusted manufacturer in the industry, this Power Bipolar Junction Transistor (BJT) guarantees top-notch quality and performance for all your switching needs. From its NPN polarity to its high operating temperature of 150 °C, this transistor is designed to deliver seamless functionality and durability. Say goodbye to inefficiency and hello to seamless operation with the BUH100BS - a game-changer in the world of transistors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration with other NPN transistors and components in circuits, enhancing compatibility and flexibility in design.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to use this transistor in various electronic applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency, making it suitable for use in power electronic circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and handling, providing convenience during assembly and integration in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables secure soldering and connection to PCBs, ensuring reliable performance and durability in electronic circuits.

No. of Terminals: 3

Three terminals provide necessary connections for emitter, base, and collector, allowing for proper functioning and control of the transistor in a circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and easy mounting on heat sinks or other components, enhancing thermal management and overall performance.

Minimum DC Current Gain (hFE): 6

Minimum DC current gain of 6 ensures reliable amplification and control of current in the circuit, improving overall efficiency and performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments, making it suitable for various industrial applications.

Maximum Collector-Emitter Voltage: 400 V

With a maximum collector-emitter voltage of 400V, this transistor can handle high voltage levels, making it suitable for power applications that require high voltage switching.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring stable operation and long-term durability of the transistor in electronic circuits.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high current loads, making it suitable for power applications that require high current switching.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring secure connections and reliable performance in electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies connections and reduces complexity in circuit design, making it easier to use this transistor in various applications.

Case Connection: COLLECTOR

Collector case connection allows for easy connection to other components in the circuit, providing convenience and flexibility during assembly and integration.

Nominal Transition Frequency (fT): 23 MHz

With a nominal transition frequency of 23MHz, this transistor offers fast switching speeds and high frequency operation, making it suitable for high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100BS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100BS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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