Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BUH150 by Onsemi is a NPN Power BJT with 400V VCE, 15A IC, and 150W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it offers a min hFE of 4 and fT of 23MHz.
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Digiode
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$99.990
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TANS Electronics
Glotronic Ltd.
Corphita
UHIMA Technologies
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Corohmni
Plastic/epoxy material provides durability and ruggedness, making the transistor suitable for various environments and applications.
NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.
Single configuration makes the transistor easy to use and integrate into electronic circuits.
Switching applications require fast response times and high efficiency, which this transistor is designed for.
High power dissipation capacity allows the transistor to handle high levels of power without overheating or failing.
High voltage rating enables the transistor to withstand high voltage levels, increasing its versatility in different circuit designs.
High collector current rating allows the transistor to handle large current loads, making it suitable for power applications.
High transition frequency ensures fast switching speeds, making the transistor ideal for high-frequency applications.
Power Bipolar Junction Transistors (BJT) BUH150 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi
Additional Features:
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Minimum DC Current Gain (hFE):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
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Sub-Category:
Surface Mount:
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Transistor Element Material:
Nominal Transition Frequency (fT):
BUH150 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
STM32F405RGT6TR
STMicroelectronics
STM32F405RGT6TR by STMicroelectronics is a 32-bit microcontroller with 64 terminals, operating at a max frequency of 26 MHz. It features DAC and ADC channels, along with DMA support. Ideal for industrial applications requiring low power consumption and high-speed processing capabilities.
ULN2803A
Onsemi
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
LM555CM
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
ULN2803ADWR
Texas Instruments
ULN2803ADWR by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85°C, has a max supply voltage of 3V, and is ideal for buffer or inverter-based applications requiring sink current flow direction.
2N2222A
New England Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WS
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
SS14
General Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
FDV304P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
Silicon Transistor
MMBT3904LT1G
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
LM358N
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
EU2B-YS2J03F
Idec
ROTARY SWITCH;
MBRS130LT3G
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Kec
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Telcom Semiconductor
1N4148
Comchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
TIP36C
Central Semiconductor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BD244CG
The Onsemi BD244CG is a PNP BJT transistor with 100V VCEO, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 15 and fT of 3MHz for efficient performance.
2SC5200OTU
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 17 A;
BCP56-16
Weitron Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
TIP115
New Jersey Semiconductor Products
PNP; Configuration: SINGLE; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1; Transistor Element Material: SILICON;
TIP111
Nte Electronics
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;
BD140-16
Samsung
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
TIP50
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Collector Current (IC): 1 A; Maximum VCEsat: 1 V;
TIP142
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;
2N2905A
General Transistor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MJD127T4
MJD127T4 by Onsemi is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and surface mount capability, it offers high power dissipation up to 20W in a compact rectangular shape.
MJD44H11RLG
MJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. The GULL WING package style makes it suitable for surface mount designs.
TIP47
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
Tt Electronics Plc
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Terminal Form: THROUGH-HOLE; Minimum DC Current Gain (hFE): 30;
TIP35C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
MJD31CT4
MJD31CT4 by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 150°C. With a transition frequency of 3MHz, it is suitable for surface mount designs.
BDW93C
Mospec Semiconductor
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Minimum DC Current Gain (hFE): 100;
TIP147T
Baneasa S A
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 3; Terminal Position: SINGLE;
D44H8
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;
TIP42A
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
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BUH150G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
BUH100AF
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;
BUH100BC
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; Terminal Finish: TIN LEAD;
BUH100BG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; Peak Reflow Temperature (C): NOT SPECIFIED;
BUH100BA
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; No. of Elements: 1;
BUH100
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 10 A;
BUH100BD
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR;
BUH150AF
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 15 A; Case Connection: COLLECTOR;
BUH100AS
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON;
BUH100BS
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3;
BUH100BU
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
BUH100G
BUH100AN
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;
BUH100AK
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; Package Body Material: PLASTIC/EPOXY;
BUH100BV
BUH150AK
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 400 V;
BUH150AJ
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 15 A; Qualification: Not Qualified;
BUH100AJ
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; JESD-609 Code: e0;
BUH100AU
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 10 A; Qualification: Not Qualified;
BUH150
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 23 MHz; Maximum Collector Current (IC): 15 A; Maximum Operating Temperature: 150 Cel;
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