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BUH150

Onsemi

BUH150 by Onsemi

BUH150 by Onsemi is a NPN Power BJT with 400V VCE, 15A IC, and 150W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it offers a min hFE of 4 and fT of 23MHz.

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4

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J2 Sourcing AB

Sweden . 15,403 parts In-Stock

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Digiode

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Vyrian

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LittleDiode

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Native Components

USA . 706 parts In-Stock

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$0.619

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Northwest PG Solutions

USA . 309 parts In-Stock

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Component Stockers USA

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

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Glotronic Ltd.

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Corphita

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UHIMA Technologies

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SupplyDigital Components

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Overview

Upgrade your power systems with the BUH150 from Onsemi! This high-quality Power Bipolar Junction Transistor offers exceptional performance for switching applications. With a maximum power dissipation of 150W and a maximum collector-emitter voltage of 400V, this NPN transistor provides reliable and efficient operation. Its flange mount package style ensures easy installation, while its robust construction guarantees long-lasting durability. Trust Onsemi's reputation for excellence and experience the benefits of superior power management with the BUH150.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and ruggedness, making the transistor suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: SINGLE

Single configuration makes the transistor easy to use and integrate into electronic circuits.

Transistor Application: SWITCHING

Switching applications require fast response times and high efficiency, which this transistor is designed for.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capacity allows the transistor to handle high levels of power without overheating or failing.

Maximum Collector-Emitter Voltage: 400 V

High voltage rating enables the transistor to withstand high voltage levels, increasing its versatility in different circuit designs.

Maximum Collector Current (IC): 15 A

High collector current rating allows the transistor to handle large current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 23 MHz

High transition frequency ensures fast switching speeds, making the transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH150 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH150 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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