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BUH100BU

Onsemi

BUH100BU by Onsemi

The Onsemi BUH100BU is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a min. DC current gain of 6 and max. collector current of 10A, it operates up to 150 °C. Its silicon element material and flange mount package make it suitable for high-power switching circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,121 parts In-Stock

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Digiode

USA . 497 parts In-Stock

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Native Components

USA . 642 parts In-Stock

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$19.090

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Northwest PG Solutions

USA . 1,748 parts In-Stock

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$20.999

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$18.899

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TANS Electronics

Latvia . 3,278 parts In-Stock

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Problanco Electronics

Mexico . 3,276 parts In-Stock

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Kulean Microsystems

USA . 2,710 parts In-Stock

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Corphita

USA . 2,408 parts In-Stock

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SupplyDigital Components

Austria . 2,347 parts In-Stock

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Corohmni

South Africa . 403 parts In-Stock

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UHIMA Technologies

Türkiye . 223 parts In-Stock

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Overview

Unleash the power of innovation with the BUH100BU by Onsemi. Known for their superior quality and reliability, Onsemi has crafted this Power Bipolar Junction Transistor (BJT) to deliver unparalleled performance in switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 10A, the BUH100BU is designed to meet the most demanding requirements. Whether you're looking to enhance the efficiency of your electronic devices or boost the performance of your industrial equipment, this transistor's single configuration and high DC current gain ensure seamless operation. Elevate your projects with the BUH100BU and experience the difference that Onsemi's cutting-edge technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for different electronic designs.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuit boards and simplifies the design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling current flow.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and secure mounting within electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong connection and ease of soldering during assembly.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat and maintain performance in demanding environments.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating allows for the handling of higher voltage circuits, expanding the range of potential applications.

Maximum Collector Current (IC): 10 A

Capable of handling high collector currents, making it suitable for power switching applications.

Nominal Transition Frequency (fT): 23 MHz

High transition frequency ensures fast switching speeds, enhancing the efficiency of the transistor in switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100BU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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