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BUH100AF

Onsemi

BUH100AF by Onsemi

BUH100AF by Onsemi is a NPN Power BJT with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a max. collector current of 10A and min. DC current gain of 6, it operates up to 150 °C. Its package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,391 parts In-Stock

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Digiode

USA . 950 parts In-Stock

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SupplyDigital Components

Austria . 7,843 parts In-Stock

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Kulean Microsystems

USA . 7,681 parts In-Stock

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Problanco Electronics

Mexico . 5,009 parts In-Stock

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TANS Electronics

Latvia . 4,703 parts In-Stock

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Corphita

USA . 1,129 parts In-Stock

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UHIMA Technologies

Türkiye . 871 parts In-Stock

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Native Components

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Corohmni

South Africa . 283 parts In-Stock

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Northwest PG Solutions

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Overview

Upgrade your power systems with the BUH100AF from Onsemi, a leading manufacturer known for producing high-quality Power Bipolar Junction Transistors (BJT). Ideal for switching applications, this NPN transistor offers reliability and efficiency in a compact rectangular package. With a maximum collector-emitter voltage of 400V and a maximum collector current of 10A, the BUH100AF is designed to handle demanding tasks with ease. Experience the value and benefits of this product today and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the internal components of the transistor, making it suitable for a range of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration with other NPN devices, providing versatility in circuit design and implementation.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making the transistor easy to use for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for controlling electrical circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation in a variety of electronic devices and circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and easy soldering, ensuring reliable performance in electronic circuits.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit connections and configurations, enabling a wide range of circuit design possibilities.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and secure mounting, making it suitable for various industrial and commercial applications.

Minimum DC Current Gain (hFE): 6

The minimum DC current gain of 6 ensures stable and reliable amplification of current signals, enhancing the performance of the transistor in switching applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments, making it suitable for a wide range of industrial applications.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage of 400V allows this transistor to handle high voltage applications with ease, ensuring reliable operation in various circuit configurations.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high reliability and performance, making this transistor a durable and long-lasting choice for electronic circuits.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high current loads, making it suitable for power switching applications that require high current handling capabilities.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and corrosion resistance, ensuring secure connections and long-term reliability in electronic circuits.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and reduces the risk of errors, making it easier to integrate this transistor into electronic circuits.

Case Connection: COLLECTOR

The case connection at the collector terminal provides efficient heat dissipation, ensuring optimal performance and reliability of the transistor in high-power applications.

Nominal Transition Frequency (fT): 23 MHz

With a nominal transition frequency of 23MHz, this transistor offers fast switching speeds and high frequency operation, making it suitable for applications that require rapid signal switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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