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BUH100BG

Onsemi

BUH100BG by Onsemi

BUH100BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 10A, and min. DC current gain of 6. It is used for switching applications in various industries due to its high operating temperature of 150 °C and nominal transition frequency of 23MHz.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,291 parts In-Stock

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Vyrian

USA . 334 parts In-Stock

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Kulean Microsystems

USA . 7,406 parts In-Stock

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Problanco Electronics

Mexico . 5,825 parts In-Stock

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TANS Electronics

Latvia . 4,476 parts In-Stock

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Corphita

USA . 2,403 parts In-Stock

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SupplyDigital Components

Austria . 1,928 parts In-Stock

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UHIMA Technologies

Türkiye . 743 parts In-Stock

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Northwest PG Solutions

USA . 568 parts In-Stock

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Native Components

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Corohmni

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Overview

Unleash the power of innovation with the BUH100BG by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by the renowned company Onsemi, this NPN transistor offers superior performance and reliability. Its flange mount package body and maximum collector-emitter voltage of 400V make it ideal for a wide range of applications. Experience the value and benefits of this product with its high DC current gain, low transition frequency, and maximum collector current of 10A. Elevate your projects with the BUH100BG and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications and ensuring a long lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering efficiency and versatility.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, making the transistor easy to use for different projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in switching circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and placement within circuit boards, optimizing space efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring reliable performance in various environments.

No. of Terminals: 3

Having three terminals allows for flexibility in circuit design and connectivity, enabling a wide range of applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style enables easy installation and secure attachment to other components, ensuring stability in the circuit.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 indicates good amplification capabilities, making it suitable for applications requiring signal amplification.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures in various operating conditions without degradation in performance.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage of 400V allows for use in high voltage circuits, making it versatile for a wide range of applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, ensuring stable performance of the transistor over time.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and connection, reducing the risk of errors in circuit design and implementation.

Case Connection: COLLECTOR

The collector case connection offers easy integration into circuits and facilitates efficient heat dissipation, ensuring reliable performance under high loads.

Nominal Transition Frequency (fT): 23 MHz

The nominal transition frequency of 23 MHz indicates fast switching capabilities, making it suitable for high-frequency applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUH100BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUH100BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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